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IPB60R099CPATMA1 vs STB34NM60ND vs SIHB30N60E-GE3 Comparison

  • Hide Shared Attributes
    IPB60R099CPATMA1
    IPB60R099CPATMA1
    STB34NM60ND
    STB34NM60ND
    SIHB30N60E-GE3
    SIHB30N60E-GE3
  • Part No.
    IPB60R099CPATMA1
    STB34NM60ND
    SIHB30N60E-GE3
  • Description
    D2PAK N-CH 650V 31A
    D2PAK N-CH 600V 29A
    VISHAY SIHB30N60E-GE3 Power MOSFET, N Channel, 29A, 600V, 0.104Ω, 10V, 2V
  • Manufacturer
    Infineon
    ST Microelectronics
    Vishay Semiconductor
  • Classification
    High Voltage MOS
    MOSFETs
    High Voltage MOS
  • Reference Price(USD)
    $3.803
    $4.768
    $2.847
  • Inventory(pcs)
    3.9k
    828
    2.2k
  • Case/Package
    TO-263-3
    TO-263-3
    TO-263
  • Number of Pins
    3
    3
    3
  • Power Rating
    255 W
    -
    -
  • Power Dissipation
    255 W
    190 W
    250 W
  • Number of Positions
    3
    3
    3
  • Input Capacitance
    2.80 nF
    -
    -
  • Rise Time
    5 ns
    53.4 ns
    -
  • Voltage Rating (DC)
    25.0 V
    -
    -
  • Drain to Source Resistance (on) (Rds)
    0.09 Ω
    0.097 Ω
    0.104 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • ECCN Code
    -
    EAR99
    -
  • Threshold Voltage
    3 V
    4 V
    2 V
  • Drain to Source Voltage (Vds)
    650 V
    600 V
    600 V
  • Current Rating
    50.0 A
    -
    -
  • Continuous Drain Current (Ids)
    31.0 A
    29A
    -
  • Operating Temperature
    -
    150℃ (TJ)
    -
  • Gate Charge
    80.0 nC
    -
    -
  • Size-Length
    10.31 mm
    10.75 mm
    10.67 mm
  • Size-Width
    9.45 mm
    10.4 mm
    9.65 mm
  • Size-Height
    4.57 mm
    4.6 mm
    4.83 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
    Tape & Reel (TR)
    Tube
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Not Recommended for New Designs
    Active
    -
  • Fall Time
    5 ns
    61.8 ns
    -
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Power Dissipation (Max)
    255 W
    190W (Tc)
    250 W
  • Input Capacitance (Ciss)
    2800pF @100V(Vds)
    2785pF @50V(Vds)
    2600pF @10V(Vds)
  • Industrial-Spec
    Yes
    Yes
    Yes
  • Input Power (Max)
    -
    190 W
    -
  • REACH SVHC Compliance Edition
    2015/12/17
    2015/12/17
    -
  • Overview
    IPB60R099CPATMA1 Product overview

    The IPB60R099CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.

    .
    Low figure-of-merit(FOM) RON x Qg
    .
    Extreme dV/dt rated
    .
    High peak current capability
    .
    Qualified according to JEDEC for target applications
    .
    Ultra low RDS (ON)
    .
    Very fast switching
    .
    Internal Rg very low
    .
    High current capability
    .
    Significant reduction of conduction and switching losses
    .
    High power density and efficiency for superior power conversion systems
    .
    Best-in-class performance ratio
    View all
    STB34NM60ND Product overview

    The STB34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST"s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.

    .
    The worldwide best RDS (ON) area amongst the fast recovery diode device
    .
    100% Avalanche tested
    .
    Low gate input resistance
    .
    The world"s best RDS (ON) in TO-220 amongst the fast recovery diode devices
    .
    Extremely high dV/dt and avalanche capabilities
    View all
    SIHB30N60E-GE3 Product overview

    The SIHB30N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.

    .
    Low figure-of-merit(FOM) RON x Qg
    .
    Low input capacitance (CISS)
    .
    Reduced switching and conduction losses
    .
    Ultra low gate charge
    .
    Avalanche energy rated
    .
    Halogen-free
    View all

IPB60R099CPATMA1 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IPB60R099CPATMA1 Mfr.Part#:IPB60R099CPATMA1 Compare: Current Part Manufacturers:Infineon Category:High Voltage MOS Description:D2PAK N-CH 650V 31A
Image:STB34NM60ND Mfr.Part#:STB34NM60ND Compare: IPB60R099CPATMA1 VS STB34NM60ND Manufacturers:ST Microelectronics Category:MOSFETs Description:D2PAK N-CH 600V 29A
Image:SIHB30N60E-GE3 Mfr.Part#:SIHB30N60E-GE3 Compare: IPB60R099CPATMA1 VS SIHB30N60E-GE3 Manufacturers:Vishay Semiconductor Category:High Voltage MOS Description:VISHAY SIHB30N60E-GE3 Power MOSFET, N Channel, 29A, 600V, 0.104Ω, 10V, 2V
Image:SIHB30N60E-GE3 Mfr.Part#:SIHB30N60E-GE3 Compare: IPB60R099CPATMA1 VS SIHB30N60E-GE3 Manufacturers:VISHAY Category:MOSFETs Description:TO-252-3 N-CH 600V 29A 125mΩ