Home  HM628512BLP-7  HM628512BLP-7 VS HM628512BLP-7

HM628512BLP-7 vs HM628512CLP-7 vs HM628512BLP-7 Comparison

  • Hide Shared Attributes
    HM628512BLP-7
    HM628512BLP-7
    HM628512CLP-7
    HM628512CLP-7
  • Part No.
    HM628512BLP-7
    HM628512CLP-7
    HM628512BLP-7
  • Description
    4M SRAM (512-kword x 8Bit)
    SRAM Chip Async Single 5V 4M-Bit 512K x 8 70ns 32Pin PDIP
    4M SRAM (512-kword x 8Bit)
  • Manufacturer
    Hitachi
    Renesas electronics
    Hitachi
  • Classification
    -
    RAM Memory
    -
  • Reference Price(USD)
    -
    -
    -
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    DIP
    DIP
    DIP
  • Mounting Style
    -
    Through Hole
    -
  • RoHS
    -
    Non-Compliant
    -
  • Product Lifecycle Status
    Obsolete
    Unknown
    Obsolete
  • Supply Voltage
    -
    5 V
    -
  • Overview
    HM628512BLP-7 Product overview

    Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system. Features •  Single 5 V supply •  Access time: 55/70 ns (max) •  Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ) •  Completely static memory. No clock or timing strobe required •  Equal access and cycle times •  Common data input and output: Three state output •  Directly TTL compatible: All inputs and outputs •  Battery backup operation

    View all
    HM628512CLP-7 Product overview

    Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512C is suitable for battery backup system. Features •  Single 5 V supply •  Access time: 55/70 ns (max) •  Power dissipation  Active: 10 mW/MHz (typ)  Standby: 4 µW (typ) •  Completely static memory. No clock or timing strobe required •  Equal access and cycle times •  Common data input and output: Three state output •  Directly TTL compatible: All inputs and outputs •  Battery backup operation

    View all
    HM628512BLP-7 Product overview

    Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system. Features •  Single 5 V supply •  Access time: 55/70 ns (max) •  Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ) •  Completely static memory. No clock or timing strobe required •  Equal access and cycle times •  Common data input and output: Three state output •  Directly TTL compatible: All inputs and outputs •  Battery backup operation

    View all

HM628512BLP-7 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:HM628512BLP-7 Mfr.Part#:HM628512BLP-7 Compare: Current Part Manufacturers:Hitachi Category: Description:4m sram (512-kword x 8bit)
Image:HM628512CLP-7 Mfr.Part#:HM628512CLP-7 Compare: HM628512BLP-7 VS HM628512CLP-7 Manufacturers:Renesas electronics Category:RAM Memory Description:Sram chip async single 5v 4m-bit 512k x 8 70ns 32pin pdip
Image:HM628512BLP-7 Mfr.Part#:HM628512BLP-7 Compare: HM628512BLP-7 VS HM628512BLP-7 Manufacturers:Renesas electronics Category: Description:Sram chip async single 5v 4m-bit 512k x 8 70ns 32pin pdip