Home  FQP6N90C  FQP6N90C VS STP60NF06

FQP6N90C vs STP5NK100Z vs STP6NK90Z Comparison

  • Hide Shared Attributes
    FQP6N90C
    FQP6N90C
    STP5NK100Z
    STP5NK100Z
    STP6NK90Z
    STP6NK90Z
  • Part No.
    FQP6N90C
    STP5NK100Z
    STP6NK90Z
  • Description
    FAIRCHILD SEMICONDUCTOR FQP6N90C Power MOSFET, N Channel, 6A, 900V, 1.93Ω, 10V, 5V
    N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
    Power MOSFET, N Channel, 5.8A, 900V, 2Ω, 10V, 3.75V
  • Manufacturer
    Fairchild
    St microelectronics
    St microelectronics
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.775
    $0.720
    $0.594
  • Inventory(pcs)
    0
    46.2k
    2.8k
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    1
    1
    -
  • Power Rating
    -
    125 W
    140 W
  • Power Dissipation
    167 W
    125 W
    140 W
  • Number of Positions
    3
    3
    3
  • Rise Time
    90 ns
    7.7 ns
    45 ns
  • Input Capacitance
    1.77 nF
    -
    -
  • Voltage Rating (DC)
    900 V
    1.00 kV
    900 V
  • Drain to Source Resistance (on) (Rds)
    1.93 Ω
    3.7 Ω
    2 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • Drain to Source Voltage (Vds)
    900 V
    1 kV
    900 V
  • Threshold Voltage
    5 V
    3.75 V
    3.75 V
  • ECCN Code
    EAR99
    EAR99
    -
  • Current Rating
    6.00 A
    3.50 A
    5.80 A
  • Breakdown Voltage (Drain to Source)
    900 V
    1.00 kV
    900 V
  • Breakdown Voltage (Gate to Source)
    ±30.0 V
    ±30.0 V
    ±30.0 V
  • Continuous Drain Current (Ids)
    6.00 A
    3.50 A
    5.60 A
  • Operating Temperature
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
  • Gate Charge
    40.0 nC
    -
    -
  • Size-Length
    10.1 mm
    10.4 mm
    10.4 mm
  • Size-Width
    4.7 mm
    4.6 mm
    4.6 mm
  • Size-Height
    9.4 mm
    9.15 mm
    9.15 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Power Dissipation (Max)
    167W (Tc)
    125W (Tc)
    140W (Tc)
  • Fall Time
    60 ns
    19 ns
    20 ns
  • Input Capacitance (Ciss)
    1770pF @25V(Vds)
    1154pF @25V(Vds)
    1350pF @25V(Vds)
  • REACH SVHC Compliance Edition
    2015/06/15
    2015/12/17
    -
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Input Power (Max)
    167 W
    125 W
    140 W
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Industrial-Spec
    -
    Yes
    Yes
  • Overview
    FQP6N90C Product overview

    The FQP6N90C is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

    .
    Low gate charge (30nC)
    .
    Low Crss (11pF)
    .
    100% avalanche tested
    View all
    STP5NK100Z Product overview

    The STP5NK100Z is a SuperMESH3™ N-channel Power MOSFET features minimized gate charge. This new SuperMESH™ Power MOSFET is the result of further design improvements on ST"s well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.

    .
    Extremely high dV/dt capability
    .
    100% Avalanche tested
    .
    Very good manufacturing repeatability
    View all
    STP6NK90Z Product overview

    The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.

    .
    Extremely high dv/dt capability
    .
    100% Avalanche tested
    .
    Gate charge minimized
    .
    Very low intrinsic capacitance
    .
    Very good manufacturing repeatability
    ESD sensitive device, take proper precaution while handling the device.
    View all

FQP6N90C Alternative Parts

Image Part Compare Manufacturer Category Description
Image:FQP6N90C Mfr.Part#:FQP6N90C Compare: Current Part Manufacturers:Fairchild Category:MOSFETs Description:Fairchild semiconductor fqp6n90c power mosfet, n channel, 6a, 900v, 1.93ω, 10v, 5v
Image:STP55NF06 Mfr.Part#:STP55NF06 Compare: FQP6N90C VS STP55NF06 Manufacturers:St microelectronics Category:MOSFETs Description:N-channel 60v - 0.017ω - 50a to-220/to-220fp/i2pak stripfet ii power mosfet
Image:STP60NF06 Mfr.Part#:STP60NF06 Compare: FQP6N90C VS STP60NF06 Manufacturers:St microelectronics Category:MOSFETs Description:To-220 n-ch 60v 60a
Image:STP5NK100Z Mfr.Part#:STP5NK100Z Compare: FQP6N90C VS STP5NK100Z Manufacturers:St microelectronics Category:MOSFETs Description:N-channel 1000v - 2.7w - 3.5a to-220/to-220fp/to-247 zener-protected supermeshtm mosfet