FRAM (Ferroelectric RAM) Memory IC 16Kb (2K x 8) 15MHz 8-SOIC
Description The FM25C160B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 20 MHz maximum Bus Frequency Direct hardware replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme Hardware Protection Software Protection Low Power Consumption 250 µA Active Current (1 MHz) 4 µA (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40 C to +85 C 8-pin “Green”/RoHS SOIC (-G)