NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-EDIP
The DS1245Y-120+ is a 1024K non-volatile SRAM in 32 pin EDIP package. This 1,048,576bit fully static non-volatile SRAM is organized as 131,072 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source will be automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The DIP package DS1245 device can be used in place of existing 128K x 8 static RAMs directly conforming to popular bytewide 32 pin DIP standard. There is no limit on the number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.
The DS1245Y-70+ is a 1024K Non-volatile (NV) SRAM, each complete NV SRAM has a self-contained Lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is conditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular byte wide 32-pin DIP standard. DS1245 devices in the PowerCap module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete non-volatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.