Home  DS1230Y-120IND+  DS1230Y-120IND+ VS DS1230Y-120IND

DS1230Y-120IND vs DS1230Y-120IND+ vs DS1230Y-70IND+ Comparison

  • Hide Shared Attributes
    DS1230Y-120IND
    DS1230Y-120IND
    DS1230Y-120IND+
    DS1230Y-120IND+
    DS1230Y-70IND+
    DS1230Y-70IND+
  • Part No.
    DS1230Y-120IND
    DS1230Y-120IND+
    DS1230Y-70IND+
  • Description
    IC NVSRAM 256Kbit 120NS 28DIP
    Non-Volatile SRAM Module, 32KX8, 120ns, CMOS, 0.74INCH, ROHS COMPLIANT, DIP-28
    Maxim DS1230Y-70IND+ SRAM Memory Chip, 256Kbit, 4.5 → 5.5V, 70ns 28Pin EDIP
  • Manufacturer
    Maxim integrated
    Maxim integrated
    Maxim integrated
  • Classification
    Memory Chip
    Memory Chip
    Memory Chip
  • Reference Price(USD)
    -
    $9.242
    $9.127
  • Inventory(pcs)
    0
    21
    1.1k
  • Case/Package
    EDIP-28
    DIP-28
    EDIP-28
  • Number of Pins
    28
    28
    28
  • Clock Speed
    120 GHz
    120 GHz
    70.0 GHz
  • Memory Size
    32000 B
    32000 B
    32000 B
  • Number of Positions
    -
    28
    28
  • Access Time
    120 ns
    120 ns
    70 ns
  • Supply Voltage (DC)
    5.00 V, 5.50 V (max)
    5.00 V, 5.50 V (max)
    5.00 V, 5.50 V (max)
  • Operating Temperature
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃ (TA)
  • Size-Length
    39.12 mm
    39.12 mm
    39.37 mm
  • Size-Width
    18.8 mm
    18.8 mm
    18.8 mm
  • Size-Height
    9.4 mm
    9.4 mm
    10.67 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Each
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Unknown
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • Supply Voltage (Min)
    -
    4.5 V
    4.5 V
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    85 ℃
  • Supply Voltage
    4.5V ~ 5.5V
    4.5V ~ 5.5V
    4.5V ~ 5.5V
  • Supply Voltage (Max)
    -
    5.5 V
    5.5 V
  • Overview
    DS1230Y-120IND Product overview

    NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 120ns 28-EDIP

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    DS1230Y-120IND+ Product overview

    The DS1230Y-120IND+ is a 256KB non-volatile SRAM in 28 pin EDIP package. It is a 262,144 bit, fully static, non-volatile SRAM organized as 32,768 words by 8 bits. The NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. This device can be used in place of existing 32K x 8 static RAMs directly conforming to the popular bytewide 28 pin DIP package. The DIP device matches the pin-out of 28256 EEPROMs allowing direct substitution while enhancing performance. This device is low profile module package are specifically designed for surface mount applications. There is no limit on the number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

    .
    Supply voltage range from 4.5V to 5.5V
    .
    Operating temperature range from -40°C to 85°C
    .
    Replaces 32K x 8 volatile static RAM, EEPROM or flash memory
    .
    Unlimited write cycles
    .
    Low power CMOS
    .
    Read and write access time is 120ns
    .
    Lithium energy source is disconnected to retain freshness until power is applied for the first time
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    DS1230Y-70IND+ Product overview

    The DS1230Y-70IND+ is a 256KB non-volatile SRAM in 28 pin EDIP package. It is a 262,144 bit, fully static, non-volatile SRAM organized as 32,768 words by 8 bits. The NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. This device can be used in place of existing 32K x 8 static RAMs directly conforming to the popular bytewide 28 pin DIP package. The DIP device matches the pin-out of 28256 EEPROMs allowing direct substitution while enhancing performance. This device is low profile module package are specifically designed for surface mount applications. There is no limit on the number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

    .
    Supply voltage range from 4.5V to 5.5V
    .
    Operating temperature range from -40°C to 85°C
    .
    Replaces 32K x 8 volatile static RAM, EEPROM or flash memory
    .
    Unlimited write cycles
    .
    Low power CMOS
    .
    Read and write access time is 70ns
    .
    Lithium energy source is disconnected to retain freshness until power is applied for the first time
    View all

DS1230Y-120IND+ Alternative Parts

Image Part Compare Manufacturer Category Description
Image:DS1230Y-120IND+ Mfr.Part#:DS1230Y-120IND+ Compare: Current Part Manufacturers:Maxim integrated Category:Memory Chip Description:Non-volaN/Ale sram module, 32kx8, 120ns, cmos, 0.74inch, rohs compliant, dip-28
Image:DS1230Y-120IND Mfr.Part#:DS1230Y-120IND Compare: DS1230Y-120IND+ VS DS1230Y-120IND Manufacturers:Maxim integrated Category:Memory Chip Description:Ic nvsram 256kbit 120ns 28dip
Image:DS1230Y-120+ Mfr.Part#:DS1230Y-120+ Compare: DS1230Y-120IND+ VS DS1230Y-120+ Manufacturers:Maxim integrated Category:Memory Chip Description:Maxim ds1230y-120+ nvram memory, 256kbit, 120ns, 4.5 → 5.5v 28pin edip
Image:DS1230AB-120+ Mfr.Part#:DS1230AB-120+ Compare: DS1230Y-120IND+ VS DS1230AB-120+ Manufacturers:Maxim integrated Category:Memory Chip Description:Maxim ds1230ab-120+ nvram memory, 256kbit, 120ns, 4.75 → 5.25v 28pin edip