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DS1230W-150 vs DS1230W-150+ vs DS1230W-100+ Comparison

  • Hide Shared Attributes
    DS1230W-150
    DS1230W-150
    DS1230W-150+
    DS1230W-150+
    DS1230W-100+
    DS1230W-100+
  • Part No.
    DS1230W-150
    DS1230W-150+
    DS1230W-100+
  • Description
    IC NVSRAM 256Kbit 150NS 28DIP
    Non-Volatile SRAM Module, 256KX8, 150ns, CMOS, PDIP28, 0.74INCH, ROHS COMPLIANT, DIP-28
    Non-Volatile SRAM Module, 256KX8, 100ns, CMOS, PDIP28, 0.74INCH, ROHS COMPLIANT, DIP-28
  • Manufacturer
    Maxim integrated
    Maxim integrated
    Maxim integrated
  • Classification
    Memory Chip
    Memory Chip
    Memory Chip
  • Reference Price(USD)
    $16.155
    $17.005
    $8.407
  • Inventory(pcs)
    0
    12
    0
  • Case/Package
    DIP-28
    DIP-28
    DIP-28
  • Number of Pins
    28
    28
    28
  • Clock Speed
    150 GHz
    150 GHz
    -
  • Memory Size
    256000 B
    256000 B
    32000 B
  • Number of Positions
    -
    -
    28
  • Access Time
    150 ns
    150 ns
    100 ns
  • Supply Voltage (DC)
    3.30 V, 3.60 V (max)
    3.30 V, 3.60 V (max)
    3.00V (min)
  • Operating Temperature
    0℃ ~ 70℃ (TA)
    0℃ ~ 70℃ (TA)
    0℃ ~ 70℃ (TA)
  • Size-Length
    39.12 mm
    -
    -
  • Size-Width
    18.29 mm
    18.29 mm
    -
  • Size-Height
    9.4 mm
    -
    -
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Bulk
    Tube
    Each
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Unknown
  • Operating Temperature (Min)
    0 ℃
    -
    0 ℃
  • Supply Voltage
    3V ~ 3.6V
    3V ~ 3.6V
    3V ~ 3.6V
  • Supply Voltage (Max)
    3.6 V
    3.6 V
    3.6 V
  • Operating Temperature (Max)
    70 ℃
    -
    70 ℃
  • Supply Voltage (Min)
    3 V
    3 V
    3 V
  • Overview
    DS1230W-150 Product overview

    NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-EDIP

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    DS1230W-150+ Product overview

    NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-EDIP

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    DS1230W-100+ Product overview

    The DS1230W-100+ is a 3.3v, 256K non-volatile SRAM in 28 pin EDIP package. This device is organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. DS1230W device can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance.

    .
    Supply voltage range is 3V to 3.6V
    .
    10 years minimum data retention in the absence of external power
    .
    Data is automatically protected during power loss
    .
    Unlimited write cycles, low power consumption
    .
    Read and write access times of 100ns
    .
    Operating temperature range from 0°C to 70°C
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DS1230W-150+ Alternative Parts

Image Part Compare Manufacturer Category Description
Image:DS1230W-150+ Mfr.Part#:DS1230W-150+ Compare: Current Part Manufacturers:Maxim integrated Category:Memory Chip Description:Non-volaN/Ale sram module, 256kx8, 150ns, cmos, pdip28, 0.74inch, rohs compliant, dip-28
Image:DS1230W-150 Mfr.Part#:DS1230W-150 Compare: DS1230W-150+ VS DS1230W-150 Manufacturers:Maxim integrated Category:Memory Chip Description:Ic nvsram 256kbit 150ns 28dip
Image:DS1230W-150-IND Mfr.Part#:DS1230W-150-IND Compare: DS1230W-150+ VS DS1230W-150-IND Manufacturers:Maxim integrated Category: Description:Non-volaN/Ale sram module, 32kx8, 150ns, cmos, 0.740 inch, extended module, dip-28