Home  DS1220AD-200IND+  DS1220AD-200IND+ VS DS1220AD-200

DS1220AD-200IND+ vs DS1220AB-200+ vs DS1220AD-200+ Comparison

  • Hide Shared Attributes
    DS1220AD-200IND+
    DS1220AD-200IND+
    DS1220AB-200+
    DS1220AB-200+
    DS1220AD-200+
    DS1220AD-200+
  • Part No.
    DS1220AD-200IND+
    DS1220AB-200+
    DS1220AD-200+
  • Description
    Maxim DS1220AD-200IND+ SRAM Memory Chip, 16Kbit, 4.5 → 5.5V, 100ns 24Pin EDIP
    Maxim DS1220AB-200+ NVRAM Memory, 16Kbit, 200ns, 4.75 → 5.25V 24Pin EDIP
    Maxim DS1220AD-200+ NVRAM Memory, 16Kbit, 200ns, 4.5 → 5.5V 24Pin EDIP
  • Manufacturer
    Maxim integrated
    Maxim integrated
    Maxim integrated
  • Classification
    RAM Memory
    Memory Chip
    Memory Chip
  • Reference Price(USD)
    $11.172
    $4.998
    $4.998
  • Inventory(pcs)
    7
    38
    0
  • Case/Package
    EDIP-24
    EDIP-24
    EDIP-24
  • Number of Pins
    24
    24
    24
  • Clock Speed
    200 GHz
    200 GHz
    200 GHz
  • Memory Size
    2000 B
    2000 B
    2000 B
  • Number of Positions
    24
    24
    24
  • Access Time
    200 ns
    200 ns
    200 ns
  • Supply Voltage (DC)
    5.00 V, 5.50 V (max)
    5.00 V, 5.25 V (max)
    5.00 V, 5.50 V (max)
  • ECCN Code
    EAR99
    -
    EAR99
  • Operating Temperature
    -40℃ ~ 85℃ (TA)
    0℃ ~ 70℃ (TA)
    0℃ ~ 70℃ (TA)
  • Size-Length
    38.1 mm
    34.04 mm
    34.04 mm
  • Size-Width
    18.29 mm
    18.29 mm
    18.29 mm
  • Size-Height
    10.67 mm
    9.4 mm
    9.4 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Unknown
  • Operating Temperature (Min)
    -40 ℃
    0 ℃
    0 ℃
  • Supply Voltage (Max)
    5.5 V
    5.25 V
    5.5 V
  • Supply Voltage
    4.5V ~ 5.5V
    4.75V ~ 5.25V
    4.5V ~ 5.5V
  • Supply Voltage (Min)
    4.5 V
    4.75 V
    4.5 V
  • Operating Temperature (Max)
    85 ℃
    70 ℃
    70 ℃
  • Overview
    DS1220AD-200IND+ Product overview

    The DS1220AD-200IND+ is a 16K non-volatile SRAM in 24 pin EDIP package. This 16,384bit fully static non-volatile SRAM is organized as 2048 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. During such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to popular bytewide 24 pin DIP package. The device also matches the pin-out of 2716 EPROM and 2816 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

    .
    Supply voltage range from 4.5V to 5.5V
    .
    Operating temperature range from -40°C to 85°C
    .
    10 years minimum data retention in absence of external power
    .
    Data is automatically protected during power loss
    .
    Low power CMOS technology
    .
    Read and write access time of 200ns
    .
    Write protection voltage of 4.37V
    .
    5pF input/output capacitance
    View all
    DS1220AB-200+ Product overview

    The DS1220AB-200+ is a 16K non-volatile SRAM in 24 pin EDIP package. This 16,384bit fully static non-volatile SRAM is organized as 2048 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. During such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to popular bytewide 24 pin DIP package. The device also matches the pin-out of 2716 EPROM and 2816 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

    .
    Supply voltage range from 4.75V to 5.25V
    .
    Operating temperature range from 0°C to 70°C
    .
    10 years minimum data retention in absence of external power
    .
    Data is automatically protected during power loss
    .
    Low power CMOS technology
    .
    Read and write access time of 200ns
    .
    Write protection voltage of 4.62V
    .
    5pF input/output capacitance
    View all
    DS1220AD-200+ Product overview

    The DS1220AD-200+ is a 16K non-volatile SRAM in 24 pin EDIP package. This 16,384bit fully static non-volatile SRAM is organized as 2048 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. During such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to popular bytewide 24 pin DIP package. The device also matches the pin-out of 2716 EPROM and 2816 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

    .
    Supply voltage range from 4.5V to 5.5V
    .
    Operating temperature range from 0°C to 70°C
    .
    10 years minimum data retention in absence of external power
    .
    Data is automatically protected during power loss
    .
    Low power CMOS technology
    .
    Read and write access time of 200ns
    .
    Write protection voltage of 4.37V
    .
    5pF input/output capacitance
    View all

DS1220AD-200IND+ Alternative Parts

Image Part Compare Manufacturer Category Description
Image:DS1220AD-200IND+ Mfr.Part#:DS1220AD-200IND+ Compare: Current Part Manufacturers:Maxim integrated Category:RAM Memory Description:Maxim ds1220ad-200ind+ sram memory chip, 16kbit, 4.5 → 5.5v, 100ns 24pin edip
Image:DS1220AD-200 Mfr.Part#:DS1220AD-200 Compare: DS1220AD-200IND+ VS DS1220AD-200 Manufacturers:Maxim integrated Category:Memory Chip Description:Ic nvsram 16kbit 200ns 24dip
Image:DS1220AD-200IND Mfr.Part#:DS1220AD-200IND Compare: DS1220AD-200IND+ VS DS1220AD-200IND Manufacturers:Maxim integrated Category:Memory Chip Description:Ic nvsram 16kbit 200ns 24dip
Image:DS1220AB-200+ Mfr.Part#:DS1220AB-200+ Compare: DS1220AD-200IND+ VS DS1220AB-200+ Manufacturers:Maxim integrated Category:Memory Chip Description:Maxim ds1220ab-200+ nvram memory, 16kbit, 200ns, 4.75 → 5.25v 24pin edip