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Home  BFG591,115  BFG591,115 VS BFG591

BFG591 vs BFG591,115 vs BFG591T/R Comparison

  • Hide Shared Attributes
    BFG591
    BFG591
    BFG591,115
    BFG591,115
    BFG591T/R
    BFG591T/R
  • Part No.
    BFG591
    BFG591,115
    BFG591T/R
  • Description
    Trans RF BJT NPN 15V 0.2A 4Pin(3+Tab) SC-73
    Trans RF BJT NPN 15V 0.2A 2000mW 4Pin(3+Tab) SC-73 T/R
    Transistor
  • Manufacturer
    Nxp
    Nxp
    Philips
  • Classification
    BJTs
    BJTs
    -
  • Reference Price(USD)
    $0.301
    $0.544
    -
  • Inventory(pcs)
    31
    0
    0
  • Case/Package
    SOT-223
    TO-261-4
    -
  • Number of Pins
    3
    3
    -
  • Frequency
    -
    7000 MHz
    -
  • Power Dissipation
    2 W
    2 W
    -
  • Number of Positions
    3
    -
    -
  • Polarity
    NPN
    NPN
    -
  • Breakdown Voltage (Collector to Emitter)
    -
    15 V
    -
  • hFE Min
    -
    60 @70mA, 8V
    -
  • Operating Temperature
    -
    150℃ (TJ)
    -
  • Material
    -
    Silicon
    -
  • Gain
    -
    13dB ~ 7.5dB
    -
  • Size-Height
    -
    1.7 mm
    -
  • Mounting Style
    Surface Mount
    Surface Mount
    -
  • Packaging
    Cut Tape (CT)
    Tape & Reel (TR)
    -
  • REACH SVHC Compliance
    No SVHC
    -
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    -
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Obsolete
    Unknown
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    -
  • Operating Temperature (Min)
    -
    -65 ℃
    -
  • DC Current Gain (hFE)
    90
    90
    -
  • Power Dissipation (Max)
    -
    2000 mW
    -
  • REACH SVHC Compliance Edition
    2015/12/17
    -
    -
  • Transistor Gender
    NPN
    -
    -
  • Input Power (Max)
    -
    2 W
    -
  • Overview
    BFG591 Product overview

    The BFG591 is a NPN silicon planar epitaxial Wideband Transistor features high power gain and low noise figure. Intended for applications in the GHz range such as MATV or CATV amplifiers.

    .
    High transition frequency
    .
    Gold metallization ensures excellent reliability
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    BFG591,115 Product overview

    This BFG591,115 RF amplifier from NXP Semiconductors is designed to operate in high radio frequency input power situations and is perfect for a variety of applications. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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BFG591,115 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:BFG591,115 Mfr.Part#:BFG591,115 Compare: Current Part Manufacturers:Nxp Category:BJTs Description:Trans rf bjt npn 15v 0.2a 2000mw 4pin(3+tab) sc-73 t/r
Image:BFG591 Mfr.Part#:BFG591 Compare: BFG591,115 VS BFG591 Manufacturers:Nxp Category:BJTs Description:Trans rf bjt npn 15v 0.2a 4pin(3+tab) sc-73
Image:BFG591T/R Mfr.Part#:BFG591T/R Compare: BFG591,115 VS BFG591T/R Manufacturers:Philips Category: Description:Transistor