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BDX53C vs TIP122 vs NJVBDX53C Comparison

  • Hide Shared Attributes
    BDX53C
    BDX53C
    TIP122
    TIP122
    NJVBDX53C
    NJVBDX53C
  • Part No.
    BDX53C
    TIP122
    NJVBDX53C
  • Description
    Trans Darlington NPN 100V 8A 60000mW 3Pin(3+Tab) TO-220 Tube
    Trans Darlington NPN 100V 5A 2000mW 3Pin(3+Tab) TO-220 Tube
    TO-220AB NPN 100V 8A
  • Manufacturer
    ST Microelectronics
    ST Microelectronics
    ON Semiconductor
  • Classification
    BJTs
    BJTs
    BJTs
  • Reference Price(USD)
    $0.105
    $0.119
    $0.199
  • Inventory(pcs)
    455.8k
    134.2k
    0
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    -
  • Power Rating
    -
    2 W
    -
  • Power Dissipation
    60 W
    65 W
    -
  • Number of Positions
    3
    3
    -
  • Voltage Rating (DC)
    -
    100 V
    100 V
  • Polarity
    NPN
    NPN
    NPN
  • Breakdown Voltage (Collector to Emitter)
    100 V
    100 V
    100 V
  • hFE Min
    750 @3A, 3V
    1000 @3A, 3V
    750 @3A, 3V
  • Continuous Collector Current
    -
    -
    8A
  • ECCN Code
    EAR99
    EAR99
    -
  • HK STC License
    -
    NLR
    -
  • Current Rating
    -
    5.00 A
    8.00 A
  • Operating Temperature
    150℃ (TJ)
    150℃ (TJ)
    -
  • Size-Length
    10.4 mm
    10.4 mm
    -
  • Size-Width
    4.6 mm
    4.6 mm
    -
  • Size-Height
    9.15 mm
    9.15 mm
    -
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Contains Lead
  • RoHS
    RoHS Compliant
    Non-Compliant
  • Product Lifecycle Status
    Active
    Active
    Unknown
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    -
  • Transistor Gender
    NPN
    NPN
    -
  • Operating Temperature (Min)
    -65 ℃
    -65 ℃
    -
  • Power Dissipation (Max)
    60000 mW
    2000 mW
    -
  • Input Power (Max)
    60 W
    2 W
    65 W
  • Industrial-Spec
    Yes
    -
    -
  • DC Current Gain (hFE)
    750
    1000
    -
  • Overview
    BDX53C Product overview

    The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor features good DC gain and high fT frequency. BDX53C is typically suited for linear, switching industrial equipment and audio amplification.

    .
    Collector to emitter voltage (Vce) is 100V
    .
    Collector current (Ic) is 8A
    .
    Power dissipation (Pd) is 60W
    .
    Collector to emitter saturation voltage of 2V at 3A collector current
    .
    DC current gain (hFE) of 750 at 3A collector current
    .
    Operating junction temperature range from 150°C
    View all
    TIP122 Product overview

    TIP122 Series NPN/PNP 100 V 5 A Complimentary Darlington Transistor - TO-220-3

    View all
    NJVBDX53C Product overview

    Bipolar (BJT) Transistor NPN - Darlington 100V 8A 65W Through Hole TO-220AB

    View all

BDX53C Alternative Parts

Image Part Compare Manufacturer Category Description
Image:BDX53C Mfr.Part#:BDX53C Compare: Current Part Manufacturers:ST Microelectronics Category:BJTs Description:Trans Darlington NPN 100V 8A 60000mW 3Pin(3+Tab) TO-220 Tube
Image:TIP122 Mfr.Part#:TIP122 Compare: BDX53C VS TIP122 Manufacturers:ST Microelectronics Category:BJTs Description:Trans Darlington NPN 100V 5A 2000mW 3Pin(3+Tab) TO-220 Tube
Image:TIP122FP Mfr.Part#:TIP122FP Compare: BDX53C VS TIP122FP Manufacturers:ST Microelectronics Category:BJTs Description:TO-220FP NPN 100V 5A
Image:BDX53C Mfr.Part#:BDX53C Compare: BDX53C VS BDX53C Manufacturers:Fairchild Category:BJTs Description:Trans Darlington NPN 100V 8A 65000mW 3Pin(3+Tab) TO-220AB Bag