Home  APT30GP60BG  APT30GP60BG VS HGTG20N60B3D

APT30GP60BG vs HGTG30N60A4 vs HGTG30N60A4D Comparison

  • Hide Shared Attributes
    APT30GP60BG
    APT30GP60BG
    HGTG30N60A4
    HGTG30N60A4
    HGTG30N60A4D
    HGTG30N60A4D
  • Part No.
    APT30GP60BG
    HGTG30N60A4
    HGTG30N60A4D
  • Description
    Trans IGBT Chip N-CH 600V 100A 463000mW 3Pin(3+Tab) TO-247
    Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Tube
    Trans IGBT Chip N-CH 600V 75A 463000mW 3Pin(3+Tab) TO-247 Tube
  • Manufacturer
    Microsemi
    On semiconductor
    On semiconductor
  • Classification
    IGBTs
    IGBTs
    -
  • Reference Price(USD)
    $8.425
    $2.346
    $2.843
  • Inventory(pcs)
    0
    7.7k
    784
  • Case/Package
    TO-247-3
    TO-247-3
    TO-247-3
  • Number of Pins
    3
    3
    3
  • Power Dissipation
    463000 mW
    463 W
    463 W
  • Number of Positions
    -
    3
    3
  • Voltage Rating (DC)
    600 V
    -
    -
  • ECCN Code
    EAR99
    EAR99
    EAR99
  • Breakdown Voltage (Collector to Emitter)
    600 V
    600 V
    600 V
  • Reverse recovery time
    -
    -
    55 ns
  • Current Rating
    30.0 A
    -
    -
  • Operating Temperature
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
  • Size-Length
    -
    15.87 mm
    -
  • Size-Width
    -
    4.82 mm
    -
  • Size-Height
    -
    20.82 mm
    -
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Input Power (Max)
    463 W
    463 W
    463 W
  • Power Dissipation (Max)
    463000 mW
    463000 mW
    463000 mW
  • Industrial-Spec
    -
    Yes
    Yes
  • Overview
    APT30GP60BG Product overview

    The APT30GP60BG IGBT transistor from Microsemi will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 463000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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    HGTG30N60A4 Product overview

    The HGTG30N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and low on state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.

    .
    Low saturation voltage
    .
    Low conduction losses due to low on-state resistance
    .
    58ns fall time at 125°C junction temperature
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    HGTG30N60A4D Product overview

    The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.

    .
    60ns at TJ = 125°C Fall time
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APT30GP60BG Alternative Parts

Image Part Compare Manufacturer Category Description
Image:APT30GP60BG Mfr.Part#:APT30GP60BG Compare: Current Part Manufacturers:Microsemi Category:IGBTs Description:Trans igbt chip n-ch 600v 100a 463000mw 3pin(3+tab) to-247
Image:HGTG30N60A4 Mfr.Part#:HGTG30N60A4 Compare: APT30GP60BG VS HGTG30N60A4 Manufacturers:On semiconductor Category:IGBTs Description:Trans igbt chip n-ch 600v 75a 463000mw 3pin(3+tab) to-247 tube
Image:HGTG20N60A4D Mfr.Part#:HGTG20N60A4D Compare: APT30GP60BG VS HGTG20N60A4D Manufacturers:On semiconductor Category:IGBTs Description:Trans igbt chip n-ch 600v 70a 290000mw 3pin(3+tab) to-247 tube
Image:HGTG20N60B3D Mfr.Part#:HGTG20N60B3D Compare: APT30GP60BG VS HGTG20N60B3D Manufacturers:On semiconductor Category:IGBTs Description:Trans igbt chip n-ch 600v 40a 165000mw 3pin(3+tab) to-247 tube