Home  AM29LV081B-90EC  AM29LV081B-90EC VS AM29LV008BT-90EC

AM29LV008BB-90EC vs AM29LV081B-90EC vs AM29LV081B-70EC Comparison

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    AM29LV008BB-90EC
    AM29LV008BB-90EC
    AM29LV081B-90EC
    AM29LV081B-90EC
    AM29LV081B-70EC
    AM29LV081B-70EC
  • Part No.
    AM29LV008BB-90EC
    AM29LV081B-90EC
    AM29LV081B-70EC
  • Description
    NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8 90ns 40Pin TSOP
    NOR Flash Parallel 3V/3.3V 8Mbit 1M x 8Bit 90ns 40Pin TSOP
    NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8 70ns 40Pin TSOP
  • Manufacturer
    Amd
    Amd
    Amd
  • Classification
    Flash Memory
    Flash Memory
    Flash Memory
  • Reference Price(USD)
    -
    -
    $1.889
  • Inventory(pcs)
    2.4k
    4.2k
    5
  • Case/Package
    TSOP1
    TSOP1
    QFP
  • Mounting Style
    -
    -
    Surface Mount
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Unknown
  • Overview
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    AM29LV081B-90EC Product overview

    GENERAL DESCRIPTION The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. DISTINCTIVE CHARACTERISTICS ■Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29LV081 device ■High performance — Access times as fast as 70 ns ■Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current ■Flexible sector architecture — Sixteen 64 Kbyte sectors — Supports full chip erase — Sector Protection features:   A hardware method of locking a sector to prevent any program or erase operations within that sector   Sectors can be locked in-system or via programming equipment   Temporary Sector Unprotect feature allows code changes in previously locked sectors ■Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■Minimum 1,000,000 write cycle guarantee per sector ■20-year data retention at 125°C — Reliable operation for the life of the system ■Package option — 40-pin TSOP ■Compatibility with JEDEC standards — Pinout and software compatible with single power supply Flash — Superior inadvertent write protection ■Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data ■Command sequence optimized for mass storage — Specific addresses not required for unlock cycles

    View all
    AM29LV081B-70EC Product overview

    GENERAL DESCRIPTION The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. DISTINCTIVE CHARACTERISTICS ■Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29LV081 device ■High performance — Access times as fast as 70 ns ■Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current ■Flexible sector architecture — Sixteen 64 Kbyte sectors — Supports full chip erase — Sector Protection features:   A hardware method of locking a sector to prevent any program or erase operations within that sector   Sectors can be locked in-system or via programming equipment   Temporary Sector Unprotect feature allows code changes in previously locked sectors ■Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■Minimum 1,000,000 write cycle guarantee per sector ■20-year data retention at 125°C — Reliable operation for the life of the system ■Package option — 40-pin TSOP ■Compatibility with JEDEC standards — Pinout and software compatible with single power supply Flash — Superior inadvertent write protection ■Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data ■Command sequence optimized for mass storage — Specific addresses not required for unlock cycles

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AM29LV081B-90EC Alternative Parts

Image Part Compare Manufacturer Category Description
Image:AM29LV081B-90EC Mfr.Part#:AM29LV081B-90EC Compare: Current Part Manufacturers:Amd Category:Flash Memory Description:Nor flash parallel 3v/3.3v 8mbit 1m x 8bit 90ns 40pin tsop
Image:AM29LV008BT-90EC Mfr.Part#:AM29LV008BT-90EC Compare: AM29LV081B-90EC VS AM29LV008BT-90EC Manufacturers:Amd Category:Flash Memory Description:Nor flash parallel 3v/3.3v 8m-bit 1m x 8 90ns 40pin tsop
Image:AM29LV008BB-90EC Mfr.Part#:AM29LV008BB-90EC Compare: AM29LV081B-90EC VS AM29LV008BB-90EC Manufacturers:Amd Category:Flash Memory Description:Nor flash parallel 3v/3.3v 8m-bit 1m x 8 90ns 40pin tsop
Image:AM29LV081B-70EI Mfr.Part#:AM29LV081B-70EI Compare: AM29LV081B-90EC VS AM29LV081B-70EI Manufacturers:Amd Category:Flash Memory Description:Nor flash parallel 3v/3.3v 8m-bit 1m x 8 70ns 40pin tsop