3SK228 vs SGM2014AM vs SGM2016AM Comparison
- Hide Shared Attributes
- Part No.
- 3SK228
- SGM2014AM
- SGM2016AM
- Description
- RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4
- GaAs N-channel Dual Gate MES FET
- GaAs N-channel Dual-Gate MES FET
- Manufacturer
- HITACHI
- SONY
- SONY
- Classification
- -
- -
- -
- Reference Price(USD)
- $0.187
- $0.233
- -
- Inventory（pcs）
- 0
- 150
- 0
- Case/Package
- SOT-143
- SOT-143
- -
- RoHS
- -
- RoHS Compliant
- RoHS Compliant
- Product Lifecycle Status
- Unknown
- Obsolete
- Obsolete
- Overview
-
3SK228 Product overview
GaAs DUAL-GATE FET. Applications: UHF TV TUNER RF AMPLIFIER.
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SGM2014AM Product overview
GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. UHF band amplifier,mixer and oscillator Low voltage operation Low noise High gain Low cross-modulation High stability Built gate-protection diode
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3SK228 Alternative Parts
| Image | Part | Compare | Manufacturer | Category | Description | |
Image: |
Mfr.Part#:3SK228 | Compare: Current Part | Manufacturers:HITACHI | Category: | Description:RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4 | |
Image: |
Mfr.Part#:3SK241 | Compare: 3SK228 VS 3SK241 | Manufacturers:Panasonic | Category: | Description:Field Effect Transistors | |
Image: |
Mfr.Part#:SGM2014AM | Compare: 3SK228 VS SGM2014AM | Manufacturers:SONY | Category: | Description:GaAs N-channel Dual Gate MES FET | |
Image: |
Mfr.Part#:SGM2016AM | Compare: 3SK228 VS SGM2016AM | Manufacturers:SONY | Category: | Description:GaAs N-channel Dual-Gate MES FET |
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