Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N4124G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.