Home  2N4124  2N4124 VS 2N4124

2N4124 vs 2N4124 vs 2N4124G Comparison

  • Hide Shared Attributes
    2N4124
    2N4124
    2N4124G
    2N4124G
  • Part No.
    2N4124
    2N4124
    2N4124G
  • Description
    Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
    Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
    TO-92 NPN 25V 0.2A
  • Manufacturer
    ConN/Anental device
    ConN/Anental device
    On semiconductor
  • Classification
    -
    -
    BJTs
  • Reference Price(USD)
    -
    -
    $0.046
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    -
    -
    TO-92-3
  • Number of Pins
    -
    -
    3
  • Frequency
    -
    -
    300 MHz
  • Power Dissipation
    -
    -
    625 mW
  • Number of Positions
    -
    -
    3
  • Thermal Resistance
    -
    -
    83.3℃/W (RθJC)
  • Voltage Rating (DC)
    -
    -
    25.0 V
  • Polarity
    -
    -
    NPN
  • Breakdown Voltage (Collector to Emitter)
    -
    -
    25 V
  • Continuous Collector Current
    -
    -
    0.2A
  • hFE Min
    -
    -
    120 @2mA, 1V
  • ECCN Code
    -
    -
    EAR99
  • Current Rating
    -
    -
    200 mA
  • Material
    -
    -
    Silicon
  • Operating Temperature
    -
    -
    -55℃ ~ 150℃ (TJ)
  • Size-Length
    -
    -
    5.2 mm
  • Size-Width
    -
    -
    4.19 mm
  • Size-Height
    -
    -
    5.33 mm
  • Mounting Style
    -
    -
    Through Hole
  • Packaging
    -
    -
    Bulk
  • REACH SVHC Compliance
    -
    -
    No SVHC
  • Lead-Free Status
    -
    -
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Active
  • DC Current Gain (hFE)
    -
    -
    300
  • Operating Temperature (Max)
    -
    -
    150 ℃
  • Operating Temperature (Min)
    -
    -
    -55 ℃
  • Power Dissipation (Max)
    -
    -
    1.5 W
  • REACH SVHC Compliance Edition
    -
    -
    2018/01/15
  • Transistor Gender
    -
    -
    NPN
  • Automative-Spec
    -
    -
    Yes
  • Input Power (Max)
    -
    -
    625 mW
  • Overview
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    2N4124G Product overview

    Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N4124G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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2N4124 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:2N4124 Mfr.Part#:2N4124 Compare: Current Part Manufacturers:Central semiconductor Category:BJTs Description:Trans gp bjt npn 25v 0.2a 3pin to-92 box
Image:2N4124RA Mfr.Part#:2N4124RA Compare: 2N4124 VS 2N4124RA Manufacturers:Fairchild Category: Description:To-92 npn 25v 0.2a
Image:2N4124 Mfr.Part#:2N4124 Compare: 2N4124 VS 2N4124 Manufacturers:ConN/Anental device Category: Description:Small signal bipolar transistor, 0.2a i(c), 25v v(br)ceo, 1-element, npn, silicon, to-92,
Image:2N4124TRE Mfr.Part#:2N4124TRE Compare: 2N4124 VS 2N4124TRE Manufacturers:Central semiconductor Category: Description:Small signal bipolar transistor, 25v v(br)ceo, 1-element, npn, silicon, to-92,