- Hide Shared Attributes
- Part No.
- MMBTA92-7-F
- MMBTA92LT1G
- MMBTA92HLT1G
- Description
- Trans GP BJT PNP 300V 0.5A 300mW Automotive 3Pin SOT-23 T/R
- SOT-23 PNP 300V 0.5A
- Trans Pnp 300V 0.5A Sot23
- Manufacturer
- Diodes
- On semiconductor
- On semiconductor
- Classification
- BJTs
- BJTs
- BJTs
- Reference Price(USD)
- $0.017
- $0.012
- $0.049
- Inventory(pcs)
- 38.6k
- 2552.8k
- 31
- Case/Package
- SOT-23-3
- SOT-23-3
- -
- Number of Pins
- 3
- 3
- -
- Frequency
- 50 MHz
- 50 MHz
- -
- Power Dissipation
- 300 mW
- 300 mW
- -
- Number of Positions
- -
- 3
- -
- Voltage Rating (DC)
- -300 V
- -300 V
- -
- Polarity
- PNP
- PNP, P-Channel
- -
- Breakdown Voltage (Collector to Emitter)
- 300 V
- 300 V
- -
- Continuous Collector Current
- -
- 0.5A
- -
- hFE Min
- 25 @30mA, 10V
- 25 @30mA, 10V
- -
- ECCN Code
- EAR99
- EAR99
- -
- HK STC License
- -
- NLR
- -
- Current Rating
- -500 mA
- -500 mA
- -
- Operating Temperature
- -55℃ ~ 150℃ (TJ)
- -55℃ ~ 150℃ (TJ)
- -
- Material
- -
- Silicon
- -
- Size-Length
- -
- 2.9 mm
- -
- Size-Width
- -
- 1.3 mm
- -
- Size-Height
- 0.98 mm
- 0.94 mm
- -
- Mounting Style
- Surface Mount
- Surface Mount
- -
- Packaging
- Tape & Reel (TR)
- Tape & Reel (TR)
- -
- REACH SVHC Compliance
- No SVHC
- No SVHC
- -
- Lead-Free Status
- Lead Free
- Lead Free
- Lead Free
- RoHS
- RoHS Compliant
- RoHS Compliant
- RoHS Compliant
- Product Lifecycle Status
- Active
- Active
- Unknown
- DC Current Gain (hFE)
- 40
- 25
- -
- Operating Temperature (Max)
- 150 ℃
- 150 ℃
- -
- Operating Temperature (Min)
- -55 ℃
- -55 ℃
- -
- Power Dissipation (Max)
- 300 mW
- 300 mW
- -
- REACH SVHC Compliance Edition
- 2015/12/17
- 2015/12/17
- -
- Transistor Gender
- -
- PNP
- -
- Automative-Spec
- -
- Yes
- -
- Input Power (Max)
- 300 mW
- 300 mW
- -
- Industrial-Spec
- -
- Yes
- -
- Overview
-
MMBTA92-7-F Product overview
This specially engineered PNP MMBTA92-7-F GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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MMBTA92LT1G Product overview
The MMBTA92LT1G is a PNP high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in a package which is designed for low power surface-mount applications.
- .
- AEC-Q101 qualified and PPAP capable
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MMBTA92HLT1G Product overview
Bipolar (BJT) Transistor
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Alternative Parts
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