Bipolar (BJT) Transistor NPN 50V 500mA 100MHz 800mW Through Hole TO-39
Thanks to Microsemi, your circuit can handle high levels of voltage using the NPN JANTX2N1711 general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JANTX2N1711S GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.