Home  2N1711  2N1711 VS 2N1711

2N1711 vs JANTX2N1711 vs JANTX2N1711S Comparison

  • Hide Shared Attributes
    2N1711
    2N1711
    JANTX2N1711
    JANTX2N1711
    JANTX2N1711S
    JANTX2N1711S
  • Part No.
    2N1711
    JANTX2N1711
    JANTX2N1711S
  • Description
    Trans GP BJT NPN 50V 0.5A 3Pin TO-39 Bag
    TO-5 NPN 30V 0.5A
    TO-5 NPN 30V 0.5A
  • Manufacturer
    St microelectronics
    Microsemi
    Microsemi
  • Classification
    BJTs
    BJTs
    BJTs
  • Reference Price(USD)
    $0.745
    $63.570
    $234.300
  • Inventory(pcs)
    0
    0
    2
  • Case/Package
    TO-5-3
    TO-5
    TO-5
  • Number of Pins
    3
    3
    3
  • Frequency
    70 MHz
    -
    -
  • Power Dissipation
    0.8 W
    0.8 W
    0.8 W
  • Voltage Rating (DC)
    75.0 V
    -
    -
  • Polarity
    NPN
    NPN
    NPN
  • Continuous Collector Current
    -
    0.5A
    0.5A
  • Breakdown Voltage (Collector to Emitter)
    50 V
    30 V
    30 V
  • hFE Min
    35 @100mA, 10V
    100 @150mA, 10V
    100 @150mA, 10V
  • hFE Max
    100
    -
    -
  • ECCN Code
    -
    EAR99
    -
  • Current Rating
    500 mA
    -
    -
  • Breakdown Voltage (Collector to Base)
    75.0 V
    -
    -
  • Operating Temperature
    175℃ (TJ)
    -65℃ ~ 200℃ (TJ)
    -65℃ ~ 200℃ (TJ)
  • Material
    Silicon
    Silicon
    Silicon
  • Size-Length
    9.4 mm
    -
    -
  • Size-Width
    9.4 mm
    -
    -
  • Size-Height
    1.5 mm
    -
    -
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tray
    Bag
  • Lead-Free Status
    Lead Free
    Contains Lead
  • RoHS
    RoHS Compliant
    Non-Compliant
    Non-Compliant
  • Product Lifecycle Status
    Not Recommended for New Designs
    Active
    Active
  • Transistor Gender
    NPN
    -
    -
  • Input Power (Max)
    800 mW
    800 mW
    800 mW
  • Operating Temperature (Max)
    175 ℃
    200 ℃
    200 ℃
  • Operating Temperature (Min)
    -65 ℃
    -65 ℃
    -65 ℃
  • Power Dissipation (Max)
    800 mW
    800 mW
    800 mW
  • Overview
    2N1711 Product overview

    Bipolar (BJT) Transistor NPN 50V 500mA 100MHz 800mW Through Hole TO-39

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    JANTX2N1711 Product overview

    Thanks to Microsemi, your circuit can handle high levels of voltage using the NPN JANTX2N1711 general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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    JANTX2N1711S Product overview

    Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JANTX2N1711S GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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2N1711 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:2N1711 Mfr.Part#:2N1711 Compare: Current Part Manufacturers:St microelectronics Category:BJTs Description:Trans gp bjt npn 50v 0.5a 3pin to-39 bag
Image:2N1711 Mfr.Part#:2N1711 Compare: 2N1711 VS 2N1711 Manufacturers:MulN/Acomp Category:BJTs Description:Bipolar (bjt) single transistor, npn, 50v, 70mhz, 3w, 500ma, 35 hfe
Image:JANTX2N1711 Mfr.Part#:JANTX2N1711 Compare: 2N1711 VS JANTX2N1711 Manufacturers:Microsemi Category:BJTs Description:To-5 npn 30v 0.5a
Image:JANTX2N1711S Mfr.Part#:JANTX2N1711S Compare: 2N1711 VS JANTX2N1711S Manufacturers:Microsemi Category:BJTs Description:To-5 npn 30v 0.5a