The 25LC1024-E/SM is a 1024kb serial EEPROM Memory with byte-level and page-level serial EEPROM functions. It also features page, sector and chip erase functions typically associated with flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple serial peripheral interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a chip select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of chip select allowing the host to service higher priority interrupts.
The CAT24M01XI-T2 is a 1Mb I²C CMOS Serial EEPROM internally organized as 131072 words of 8-bit each. It features a 256-byte page write buffer and supports the standard 100kHz, fast 400kHz and fast-plus 1MHz I²C protocol. Write operations can be inhibited by taking the WP pin high (this protects the entire memory). External address pins make it possible to address up to eight CAT24M01 devices on the same bus. On-chip ECC (Error Correction Code) makes the device suitable for high reliability applications.
The 25LC1024-I/SM is a 1Mbit serial SPI bus EEPROM (Electrically Erasable Programmable Memory) in 8 pin SOIJ package. It features page, sector and chip erase functions typically associated with flash based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are clock input (SCK), separate data in (SI) and data out (SO) lines. Access to the device is controlled by chip select input. Communication to the device can be paused via hold pin. While the device is paused, transitions on its inputs will be ignored with exception of chip select allowing host to service higher priority interrupts. It features more than 1 million erase/write cycles and data retention is greater than 200 years.