1N5418E3 vs SPD5418SMS vs 31GF4 Comparison
- Hide Shared Attributes
- Part No.
- 1N5418E3
- SPD5418SMS
- 31GF4
- Description
- Fast Rectifier (100-500ns)
- Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HERMETICALLY SEALED, SMS, 2 PIN
- ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGEï¼400V CURRENTï¼ 3A
- Manufacturer
- Microsemi
- Solid state devices
- Gulfsemi
- Classification
- -
- -
- -
- Reference Price(USD)
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- -
- -
- Inventory(pcs)
- 0
- 0
- 0
- Case/Package
- B
- -
- -
- Number of Pins
- 2
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- -
- Reverse recovery time
- 150 ns
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- -
- Packaging
- Bag
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- -
- Lead-Free Status
- Lead Free
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- -
- RoHS
- RoHS Compliant
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- -
- Product Lifecycle Status
- Active
- Active
- Unknown
- Operating Temperature (Min)
- -65 ℃
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- -
- Operating Temperature (Max)
- 175 ℃
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- Overview
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1N5418E3 Product overview
DESCRIPTION This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category 1” metallurgical bond. These devices are also available in surface mount MELF package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. FEATURES • Popular JEDEC registered 1N5415 thru 1N5420 series. • Voidless hermetically sealed glass package. • Quadruple-layer passivation. • Internal “Category 1” metallurgical bonds. • Working Peak Reverse Voltage 50 to 600 volts. • JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411. • RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • Fast recovery 3 amp 50 to 600 volt rectifiers. • Military and other high-reliability applications. • General rectifier applications including bridges, half-bridges, catch diodes, etc. • High forward surge current capability. • Extremely robust construction. • Low thermal resistance. • Controlled avalanche with peak reverse power capability. • Inherently radiation hard as described in Microsemi “MicroNote 050”.<
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1N5418E3 Alternative Parts
Image | Part | Compare | Manufacturer | Category | Description | |
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Mfr.Part#:1N5418E3 | Compare: Current Part | Manufacturers:Microsemi | Category: | Description:Fast recN/Afier (100-500ns) | |
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Mfr.Part#:30S4-AP | Compare: 1N5418E3 VS 30S4-AP | Manufacturers:Micro commercial components | Category: | Description:3a medium power silicon recN/Afier 50 - 1000 volts | |
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Mfr.Part#:31GF4 | Compare: 1N5418E3 VS 31GF4 | Manufacturers:Gulfsemi | Category: | Description:Ultrafast efficient glass passivated recN/Afier voltageï¼400v currentï¼ 3a | |
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Mfr.Part#:SPD5418SMS | Compare: 1N5418E3 VS SPD5418SMS | Manufacturers:Solid state devices | Category: | Description:RecN/Afier diode, avalanche, 1 phase, 1 element, 3a, 400v v(rrm), silicon, hermeN/Acally sealed, sms, 2 pin |