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STLD200N4F6AG Automotive N-channel STripFET™ F6 Power MOSFET in a PowerFLAT™ Dual Side Cooling

Author: Irene
Date: 19 Apr 2022
 506
STripFET™

Catalog

Features

Applications

Description

Electrical Ratings

Electrical Characteristics

Test Circuits

Package Information

Revision History

STLD200N4F6AG Datasheet

STLD200N4F6AG Manufacturer

Using Warning

STLD200N4F6AG FAQ

 

Features

Order code VDS RDS(on) max. ID
STLD200N4F6AG 40 V 1.5 mΩ 120 A
  • Designed for automotive applications
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

 

Applications

  • Switching applications

 

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Internal Schematic Diagram

Figure 1: Internal Schematic Diagram

 

Electrical Ratings

Absolute Maximum Ratings

Symbol Parameter Value Unit
VDS Drain-source voltage 40 V
VGS Gate-source voltage ± 20 V
ID(1)(2) Drain current (continuous) at TC = 25 °C 120 A
ID(1)(2) Drain current (continuous) at TC = 100 °C 120 A
IDM(2)(3) Drain current (pulsed) 480 A
PTOT(2) Total dissipation at TC = 25 °C 158 W
TJ Operating junction temperature range - 55 to 175 °C
Tstg Storage temperature range

Notes:

(1)Limited by package.

(2)The value is rated according to Rthj-case bottom side.

(3)Pulse width limited by safe operating area.

 

Thermal Data

Symbol Parameter Value Unit
Rthj-c top side Thermal resistance junction-case top side 2.8 °C/W
Rthj-c bottom side Thermal resistance junction-case bottom side 0.95
Rthj-pcb(1) Thermal resistance junction-pcb 31.3

Notes:

(1)When mounted on 1 inch² 2 Oz. Cu board, t ≤ 10 s

 

Avalanche Characteristics

Symbol Parameter Value Unit
IAV Avalanche current, repetitive or not repetitive (pulse width limited by maximum junction temperature) 90 A
EAS Single pulse avalanche energy (Tj = 25 °C, IC = IAV, VDD = 16 V) 400 mJ

Electrical Characteristics

(TC= 25 °C unless otherwise specified)

On/Off States

Symbol Parameter Test conditions Min. Typ. Max. Unit
IDSS Zero gate voltage Drain current VGS = 0 V, VDS = 16 V     1 µA
VGS = 0 V, VDS = 16 V, Tj = 125 °C     10 µA
IGSS Gate-body leakage current VDS = 0 V, VGS = ± 20 V     ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 2   4 V
RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 75 A   1.27 1.5
VGS = 6.5 V, ID = 75 A   1.48 2

 

Switching Times

Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 20 V, ID = 90 A RG = 30 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times") - 150 - ns
tr Rise time - 440 - ns
td(off) Turn-off-delay time - 600 - ns
tf Fall time - 410 - ns

 

Source Drain Diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD(1) Source-drain current   -   120 A
ISDM(1)(2) Source-drain current (pulsed)   -   480 A
VSD (3) Forward on voltage VGS = 0 V, ISD = 90 A -   1.2 V
trr Reverse recovery time ISD = 90 A, di/dt = 100 A/µs, VDD = 20 V (see Figure 15: Test circuit for inductive load switching and diode recovery times)  - 40   ns
Qrr Reverse recovery charge - 53   nC
IRRM Reverse recovery current - 2.5   A

Notes:

(1)Limited by package.

(2)Pulse width is limited by safe operating area

(3)Pulse test: pulse duration = 300 µs, duty cycle 1.5%

 

Electrical Characteristics (Curves)

2,3 Electrical Characteristics

 

4,5 Electrical Characteristics

 

6,7 Electrical Characteristics

 

8,9 Electrical Characteristics

 

10,11 Electrical Characteristics

 

12 Electrical Characteristics

 

Test Circuits

13,14 Test Circuits

 

15,16 Test Circuits

 

17,18 Test Circuits

 

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

 

PowerFLAT™ 5x6 dual side cooling package outline

PowerFLAT™ 5x6 dual side cooling package outline

PowerFLAT™ 5x6 Dual Side Cooling Mechanical Data

Dim. mm
Min. Typ. Max.
A 0.66 0.71 0.76
A1 0.6   0.75
b 0.33 0.43 0.53
c 0.15 0.203 0.3
D 5.00 BSC 
D1 4.06 4.21 4.36
D2 2.40 BSC
D3 2.8 3.3 3.8
E 6.00 BSC
E1 3.525 3.675 3.825
E2 1.05 1.2 1.35
E3 3.80 BSC
E4 4.2 4.7 5.2
e 1.27 BSC
I     0.15
L 0.15 0.25 0.35
L1 0.925 1.05 1.175
L2 0.45 0.575 0.7
ϑ 12° BSC
ϑ1 7° BSC
j 0.20 BSC

 

PowerFLAT™ 5x6 dual side cooling recommended footprint (dimensions are in mm)

PowerFLAT™ 5x6 dual side cooling recommended footprint (dimensions are in mm)

 

Revision History

Date Revision Changes
19-Jan-16 1 First release.

 

STLD200N4F6AG Datasheet

You can download the datasheet from the link given below:

STLD200N4F6AG Datasheet

 

STLD200N4F6AG Manufacturer

STMicroelectronics is a French-Italian multinational electronics and semiconductors manufacturer headquartered in Plan-les-Ouates near Geneva, Switzerland. The company resulted from the merger of two government-owned semiconductor companies in 1987: "Thomson Semiconducteurs" of France and "SGS Microelettronica" of Italy. It is commonly called "ST", and it is Europe's largest semiconductor chip maker based on revenue. While STMicroelectronics corporate headquarters and the headquarters for EMEA region are based in the Canton of Geneva, the holding company, STMicroelectronics N.V. is incorporated in the Netherlands.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

STLD200N4F6AG FAQ

What does N channel mean?

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel.

 

What is N channel and P channel?

N Channel MOSFETs turn on when a positive voltage of the appropriate threshold value is applied across the gate-to-source terminals. P Channel MOSFETs turn on by applying a given value of a negative gate-to-source voltage. The gating of MOSFETs determines their application in SMPS converters.

 

What does MOSFET power mean?

Metal Oxide Semiconductor Field-Effect Transistor

Power MOSFET is a type of metal oxide semiconductor field-effect transistor used to switch large amounts of current. Power MOSFETs are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Engineering Glossary.

 

What are power MOSFETs used for?

Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications.

 

What is the difference between MOSFET and power mosfet?

Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.

 

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