Catalog
Features
- Designed for automotive applications
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Figure 1: Internal Schematic Diagram
Electrical Ratings
Absolute Maximum Ratings
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source voltage |
40 |
V |
VGS |
Gate-source voltage |
± 20 |
V |
ID(1)(2) |
Drain current (continuous) at TC = 25 °C |
120 |
A |
ID(1)(2) |
Drain current (continuous) at TC = 100 °C |
120 |
A |
IDM(2)(3) |
Drain current (pulsed) |
480 |
A |
PTOT(2) |
Total dissipation at TC = 25 °C |
158 |
W |
TJ |
Operating junction temperature range |
- 55 to 175 |
°C |
Tstg |
Storage temperature range |
Notes:
(1)Limited by package.
(2)The value is rated according to Rthj-case bottom side.
(3)Pulse width limited by safe operating area.
Thermal Data
Symbol |
Parameter |
Value |
Unit |
Rthj-c top side |
Thermal resistance junction-case top side |
2.8 |
°C/W |
Rthj-c bottom side |
Thermal resistance junction-case bottom side |
0.95 |
Rthj-pcb(1) |
Thermal resistance junction-pcb |
31.3 |
Notes:
(1)When mounted on 1 inch² 2 Oz. Cu board, t ≤ 10 s
Avalanche Characteristics
Symbol |
Parameter |
Value |
Unit |
IAV |
Avalanche current, repetitive or not repetitive (pulse width limited by maximum junction temperature) |
90 |
A |
EAS |
Single pulse avalanche energy (Tj = 25 °C, IC = IAV, VDD = 16 V) |
400 |
mJ |
Electrical Characteristics
(TC= 25 °C unless otherwise specified)
On/Off States
Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
IDSS |
Zero gate voltage Drain current |
VGS = 0 V, VDS = 16 V |
|
|
1 |
µA |
VGS = 0 V, VDS = 16 V, Tj = 125 °C |
|
|
10 |
µA |
IGSS |
Gate-body leakage current |
VDS = 0 V, VGS = ± 20 V |
|
|
±100 |
nA |
VGS(th) |
Gate threshold voltage |
VDS = VGS, ID = 1 mA |
2 |
|
4 |
V |
RDS(on) |
Static drain-source on- resistance |
VGS = 10 V, ID = 75 A |
|
1.27 |
1.5 |
mΩ |
VGS = 6.5 V, ID = 75 A |
|
1.48 |
2 |
Switching Times
Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
td(on) |
Turn-on delay time |
VDD = 20 V, ID = 90 A RG = 30 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times") |
- |
150 |
- |
ns |
tr |
Rise time |
- |
440 |
- |
ns |
td(off) |
Turn-off-delay time |
- |
600 |
- |
ns |
tf |
Fall time |
- |
410 |
- |
ns |
Source Drain Diode
Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
ISD(1) |
Source-drain current |
|
- |
|
120 |
A |
ISDM(1)(2) |
Source-drain current (pulsed) |
|
- |
|
480 |
A |
VSD (3) |
Forward on voltage |
VGS = 0 V, ISD = 90 A |
- |
|
1.2 |
V |
trr |
Reverse recovery time |
ISD = 90 A, di/dt = 100 A/µs, VDD = 20 V (see Figure 15: Test circuit for inductive load switching and diode recovery times) |
- |
40 |
|
ns |
Qrr |
Reverse recovery charge |
- |
53 |
|
nC |
IRRM |
Reverse recovery current |
- |
2.5 |
|
A |
Notes:
(1)Limited by package.
(2)Pulse width is limited by safe operating area
(3)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Electrical Characteristics (Curves)
Test Circuits
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PowerFLAT™ 5x6 dual side cooling package outline
PowerFLAT™ 5x6 Dual Side Cooling Mechanical Data
Dim. |
mm |
Min. |
Typ. |
Max. |
A |
0.66 |
0.71 |
0.76 |
A1 |
0.6 |
|
0.75 |
b |
0.33 |
0.43 |
0.53 |
c |
0.15 |
0.203 |
0.3 |
D |
5.00 BSC |
D1 |
4.06 |
4.21 |
4.36 |
D2 |
2.40 BSC |
D3 |
2.8 |
3.3 |
3.8 |
E |
6.00 BSC |
E1 |
3.525 |
3.675 |
3.825 |
E2 |
1.05 |
1.2 |
1.35 |
E3 |
3.80 BSC |
E4 |
4.2 |
4.7 |
5.2 |
e |
1.27 BSC |
I |
|
|
0.15 |
L |
0.15 |
0.25 |
0.35 |
L1 |
0.925 |
1.05 |
1.175 |
L2 |
0.45 |
0.575 |
0.7 |
ϑ |
12° BSC |
ϑ1 |
7° BSC |
j |
0.20 BSC |
PowerFLAT™ 5x6 dual side cooling recommended footprint (dimensions are in mm)
Revision History
Date |
Revision |
Changes |
19-Jan-16 |
1 |
First release. |
STLD200N4F6AG Datasheet
You can download the datasheet from the link given below:
STLD200N4F6AG Datasheet
STLD200N4F6AG Manufacturer
STMicroelectronics is a French-Italian multinational electronics and semiconductors manufacturer headquartered in Plan-les-Ouates near Geneva, Switzerland. The company resulted from the merger of two government-owned semiconductor companies in 1987: "Thomson Semiconducteurs" of France and "SGS Microelettronica" of Italy. It is commonly called "ST", and it is Europe's largest semiconductor chip maker based on revenue. While STMicroelectronics corporate headquarters and the headquarters for EMEA region are based in the Canton of Geneva, the holding company, STMicroelectronics N.V. is incorporated in the Netherlands.
Using Warning
Note: Please check their parameters and pin configuration before replacing them in your circuit.
STLD200N4F6AG FAQ
What does N channel mean?
A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel.
What is N channel and P channel?
N Channel MOSFETs turn on when a positive voltage of the appropriate threshold value is applied across the gate-to-source terminals. P Channel MOSFETs turn on by applying a given value of a negative gate-to-source voltage. The gating of MOSFETs determines their application in SMPS converters.
What does MOSFET power mean?
Metal Oxide Semiconductor Field-Effect Transistor
Power MOSFET is a type of metal oxide semiconductor field-effect transistor used to switch large amounts of current. Power MOSFETs are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Engineering Glossary.
What are power MOSFETs used for?
Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications.
What is the difference between MOSFET and power mosfet?
Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.