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Mfr. Part # |
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Description |
Package |
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(USD) |
|
|
PN2222ATA |
Company:ON Semiconductor |
|
Package:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
DataSheet |
In Stock:18000
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Price:
2000+: |
$0.04195 |
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$0.03629 |
10000+: |
$0.03009 |
50000+: |
$0.02655 |
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Catalog
Features
■ Silicon epitaxial planar NPN transistor
■ TO-92 package suitable for through-hole PCB assembly
■ The PNP complementary type is PN2907A
Applications
■ Well suitable for TV and home appliance equipment
■ Small load switch transistor with high gain and low saturation voltage
Internal Schematic Diagram
Absolute Maximum Ratings
Symbol
|
Parameter
|
Value
|
Unit
|
VCBO
|
Collector-Emitter Voltage (IE = 0)
|
75
|
V
|
VCEO
|
Collector-Emitter Voltage (IB = 0)
|
40
|
V
|
VEBO
|
Emitter-Base Voltage (IC = 0)
|
6
|
V
|
IC
|
Collector Current
|
0.6
|
A
|
ICM
|
Collector Peak Current (tp < 5 ms)
|
0.8
|
A
|
Ptot
|
Total Dissipation at Tamb = 25 ℃
|
500
|
mW
|
Tstg
|
Storage Temperature
|
-65 to 150
|
℃
|
Tj
|
Max. Operating Junction Temperature
|
150
|
℃
|
Thermal Data
Rthj-amb ·
|
Thermal Resistance Junction-Ambient
|
Max
|
250
|
℃/W
|
Rthj- case ·
|
Thermal Resistance Junction-Case
|
Max
|
83.3
|
℃/W
|
Electrical Characteristics
Tcase = 25℃ unless otherwise specified
Symbol
|
Parameter
|
Test Conditions
|
Min.
|
Typ.
|
Max.
|
Unit
|
ICEX
|
Collector Cut-off
Current (VBE = -3 V)
|
VCE = 60 V
|
|
|
10
|
nA
|
IBEX
|
Base Cut-off Current (VBE = -3 V)
|
VCE = 60 V
|
|
|
20
|
nA
|
ICBO
|
Collector Cut-off Current (IE = 0)
|
VCB = 75 V
|
|
|
10
|
nA
|
VCB = 75 V Tj = 150 oC
|
|
|
10
|
μA
|
IEBO
|
Emitter Cut-off Current (IC = 0)
|
VEB = 3 V
|
|
|
15
|
nA
|
V(BR)CEO*
|
Collector-Emitter
Breakdown Voltage
(IB = 0)
|
IC = 10 mA
|
40
|
|
|
V
|
V(BR)CBO
|
Collector-Base
Breakdown Voltage
(IE = 0)
|
IC = 10 μA
|
75
|
|
|
V
|
V(BR)EBO
|
Emitter-Base
Breakdown Voltage
(IC = 0)
|
IE = 10 μA
|
6
|
|
|
V
|
VCE(sat)*
|
Collector-Emitter Saturation Voltage
|
IC = 150 mA IB = 15 mA
|
|
|
0.3
|
V
|
IC = 500 mA IB = 50 mA
|
|
|
1
|
V
|
VBE(sat)*
|
Collector-Base
Saturation Voltage
|
IC = 150 mA IB = 15 mA
|
0.6
|
|
1.2
|
V
|
IC = 500 mA IB = 50 mA
|
|
|
2
|
V
|
hFE*
|
DC Current Gain
|
IC = 0.1 mA VCE = 10 V
|
35
|
|
|
|
IC = 1 mA VCE = 10 V
|
50
|
|
|
|
IC = 10 mA VCE = 10 V
|
75
|
|
|
|
IC = 150 mA VCE = 10 V
|
100
|
|
300
|
|
IC = 150 mA VCE = 1 V
|
50
|
|
|
|
IC = 500 mA VCE = 10 V
|
40
|
|
|
|
fT
|
Transition Frequency
|
IC = 20 mA VCE = 20V f = 100MHz
|
|
270
|
|
MHz
|
CCBO
|
Collector-Base Capacitance
|
IE = 0 VCB = 10 V f = 1 MHz
|
|
4
|
8
|
pF
|
CEBO
|
Emitter-Base Capacitance
|
IC = 0 VEB = 0.5 V f = 1MHz
|
|
20
|
25
|
pF
|
NF
|
Noise Figure
|
IC = 0.1 mA VCE = 10 V f = 1 KHz
Df = 200 Hz RG = 1 KΩ
|
|
4
|
|
dB
|
hie*
|
Input Impedance
|
VCE = 10 V IC = 1 mA f = 1 KHz
|
2
|
|
8
|
KΩ
|
VCE = 10 V IC = 10 mA f = 1 KHz
|
0.25
|
|
1.25
|
KΩ
|
hre*
|
Reverse Voltage Ratio
|
VCE = 10 V IC = 1 mA f = 1 KHz VCE = 10 V IC = 10 mA f = 1 KHz
|
|
|
8
4
|
10-4
10-4
|
hfe*
|
Small Signal Current Gain
|
VCE = 10 V IC = 1 mA f = 1 KHz
|
50
|
|
300
|
|
VCE = 10 V IC = 10 mA f = 1 KHz
|
75
|
|
375
|
|
hoe*
|
Output Admittance
|
VCE = 10 V IC = 1 mA f = 1 KHz
|
5
|
|
35
|
μS
|
VCE = 10 V IC = 10 mA f = 1 KHz
|
25
|
|
200
|
μS
|
td
|
Delay Time
|
IC = 150 mA IB = 15 mA VCC = 30 V
|
|
5
|
10
|
ns
|
tr
|
Rise Time
|
|
12
|
25
|
ns
|
ts
|
Storage Time
|
IC = 150 mA IB1 = - IB2 = 15 mA VCC = 30 V
|
|
185
|
225
|
ns
|
tf
|
Fall Time
|
|
24
|
60
|
ns
|
*Pulsed: Pulse duration = 300μs, duty cycle ≤ 2 %
TO-92 Mechanical Data
DIM.
|
mm
|
inch
|
MIN.
|
TYP.
|
MAX.
|
MIN.
|
TYP.
|
MAX.
|
A
|
4.32
|
|
4.95
|
0.170
|
|
0.195
|
b
|
0.36
|
|
0.51
|
0.014
|
|
0.020
|
D
|
4.45
|
|
4.95
|
0.175
|
|
0.194
|
E
|
3.30
|
|
3.94
|
0.130
|
|
0.155
|
e
|
2.41
|
|
2.67
|
0.095
|
|
0.105
|
e1
|
1.14
|
|
1.40
|
0.045
|
|
0.055
|
L
|
12.70
|
|
15.49
|
0.500
|
|
0.609
|
R
|
2.16
|
|
2.41
|
0.085
|
|
0.094
|
S1
|
1.14
|
|
1.52
|
0.045
|
|
0.059
|
W
|
0.41
|
|
0.56
|
0.016
|
|
0.022
|
V
|
4 degree
|
|
6 degree
|
4 degree
|
|
6 degree
|
TO-92 Ammopack Shipment (Suffix"-AP") Mechanical Data
DIM.
|
mm
|
inch
|
MIN.
|
TYP.
|
MAX.
|
MIN.
|
TYP.
|
MAX.
|
A1
|
|
|
4.80
|
|
|
0.189
|
T
|
|
|
3.80
|
|
|
0.150
|
T1
|
|
|
1.60
|
|
|
0.063
|
T2
|
|
|
2.30
|
|
|
0.091
|
d
|
|
|
0.48
|
|
|
0.019
|
P0
|
12.50
|
12.70
|
12.90
|
0.492
|
0.500
|
0.508
|
P2
|
5.65
|
6.35
|
7.05
|
0.222
|
0.250
|
0.278
|
F1,F2
|
2.44
|
2.54
|
2.94
|
0.096
|
0.100
|
0.116
|
delta H
|
-2.00
|
|
2.00
|
-0.079
|
|
0.079
|
W
|
17.50
|
18.00
|
19.00
|
0.689
|
0.709
|
0.748
|
W0
|
5.70
|
6.00
|
6.30
|
0.224
|
0.236
|
0.248
|
W1
|
8.50
|
9.00
|
9.25
|
0.335
|
0.354
|
0.364
|
W2
|
|
|
0.50
|
|
|
0.020
|
H
|
18.50
|
|
20.50
|
0.728
|
|
0.807
|
H0
|
15.50
|
16.00
|
16.50
|
0.610
|
0.630
|
0.650
|
H1
|
|
|
25.00
|
|
|
0.984
|
D0
|
3.80
|
4.00
|
4.20
|
0.150
|
0.157
|
0.165
|
t
|
|
|
0.90
|
|
|
0.035
|
L
|
|
|
11.00
|
|
|
0.433
|
I1
|
3.00
|
|
|
0.118
|
|
|
delta P
|
-1.00
|
|
1.00
|
-0.039
|
|
0.039
|
PN2222A Datasheet
You can download the datasheet of PN2222A from the link given below:
PN2222A Datasheet
PN2222A FAQ
What is NPN transistor and its working?
NPN transistors are a type of bipolar transistor with three layers that are used for signal amplification. It is a device that is controlled by the current. A negative-positive-negative transistor is denoted by the abbreviation NPN. In an NPN transistor, the flow of electrons is what causes it to conduct.
Why is NPN transistor used?
NPN transistors are used in amplifying circuit applications. NPN transistors are used in the Darlington pair circuits for amplifying weak signals. NPN transistors are used in applications we need sinking current. NPN transistors are used in some classic amplifier circuits, the same as 'push-pull' amplifier circuits.
What does a NPN transistor made of?
A bipolar junction transistor is made up of three pieces of silicon. Depending on what is added to the silicon, it will be either N-type or P-type. An NPN transistor has a piece of P-type silicon (the base) sandwiched between two pieces of N-type (the collector and emitter).
Is NPN faster than PNP?
A npn transistor has electrons as majority charge carriers whereas the pnp transistor has holes as majority charge carrier. The mobility of electrons is better than mobility of holes. So a npn transistor is faster in operation than a pnp transistor.
Why NPN transistor is preferred over PNP?
The majority charge carriers in an NPN transistor are electrons and the majority carriers in a PNP transistor are holes. The electrons have better mobility than holes. Therefore, NPN transistors are preferred over PNP transistors.