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PN2222A Small Signal NPN Transistor Datasheet PDF Download

Author: Irene
Date: 21 Feb 2022
 1332
pn2222a pinout

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Photo Mfr. Part # Company Description Package PDF Qty Pricing
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PN2222ATA PN2222ATA Company:ON Semiconductor Remark:TRANS NPN 40V 1A TO92 Package:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Catalog

Features

Applications

Internal Schematic Diagram

Absolute Maximum Ratings

Thermal Data

Electrical Characteristics

TO-92 Mechanical Data

TO-92 Ammopack Shipment (Suffix"-AP") Mechanical Data

PN2222A Datasheet

PN2222A FAQ 

 

Features

Silicon epitaxial planar NPN transistor

TO-92 package suitable for through-hole PCB assembly

■ The PNP complementary type is PN2907A

 

Applications 

■ Well suitable for TV and home appliance equipment

■ Small load switch transistor with high gain and low saturation voltage

 

Internal Schematic Diagram

Internal Schematic Diagram

 

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

VCBO

Collector-Emitter Voltage (IE = 0)

75

V

VCEO

Collector-Emitter Voltage (IB = 0)

40

V

VEBO

Emitter-Base Voltage (IC = 0)

6

V

IC

Collector Current

0.6

A

ICM 

Collector Peak Current (tp < 5 ms)

0.8

A

Ptot

Total Dissipation at Tamb = 25 ℃

500

mW

Tstg

Storage Temperature

-65 to 150

Tj

Max. Operating Junction Temperature

150

 

Thermal Data

Rthj-amb ·

Thermal Resistance Junction-Ambient

Max

250

℃/W

Rthj- case ·

Thermal Resistance Junction-Case

Max

83.3

℃/W

 

Electrical Characteristics 

Tcase = 25℃ unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = -3 V)

VCE = 60 V

 

 

10

nA

IBEX

Base Cut-off Current (VBE = -3 V)

VCE = 60 V

 

 

20

nA

ICBO


 

Collector Cut-off Current (IE = 0)


 

VCB = 75 V

 

 

10

nA

VCB = 75 V Tj = 150 oC

 

 

10

μA

IEBO

Emitter Cut-off Current (IC = 0)

VEB = 3 V

 

 

15

nA

V(BR)CEO*

Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

40

 

 

V

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 10 μA

75

 

 

V

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10 μA

6

 

 

V

VCE(sat)*

Collector-Emitter Saturation Voltage

IC  = 150 mA IB = 15 mA

 

 

0.3

V

IC  = 500 mA IB = 50 mA

 

 

1

V

VBE(sat)*

Collector-Base

Saturation Voltage

IC  = 150 mA IB = 15 mA

0.6

 

1.2

V

IC  = 500 mA IB = 50 mA

 

 

2

V

hFE*

DC Current Gain

IC  = 0.1 mA   VCE = 10 V

35

 

 

 

IC  = 1 mA    VCE = 10 V

50

 

 

 

IC  = 10 mA   VCE = 10 V

75

 

 

 

IC = 150 mA  VCE = 10 V

100

 

300

 

IC = 150 mA  VCE = 1 V

50

 

 

 

IC = 500 mA  VCE = 10 V

40

 

 

 

fT

Transition Frequency

IC = 20 mA  VCE = 20V  f = 100MHz

 

270

 

MHz

CCBO

Collector-Base Capacitance

IE = 0 VCB  = 10 V  f = 1 MHz

 

4

8

pF

CEBO

Emitter-Base Capacitance

IC = 0 VEB = 0.5 V  f = 1MHz

 

20

25

pF

NF

Noise Figure

IC = 0.1 mA  VCE = 10 V  f = 1 KHz

Df = 200 Hz  RG = 1 KΩ

 

4

 

dB

hie*

Input Impedance

VCE  =  10 V   IC  = 1 mA   f = 1 KHz

2

 

8

VCE = 10 V  IC = 10 mA  f = 1 KHz

0.25

 

1.25

hre*

Reverse Voltage Ratio

VCE  =  10 V   IC  = 1 mA   f = 1 KHz   VCE = 10 V   IC = 10 mA   f = 1 KHz

 

 

8

4

10-4

10-4

hfe*

Small Signal Current Gain

VCE  =  10 V   IC  = 1 mA   f = 1 KHz

50

 

300

 

VCE = 10 V   IC = 10 mA   f = 1 KHz

75

 

375

 

hoe*

Output Admittance

VCE  =  10 V   IC  = 1 mA   f = 1 KHz

5

 

35

μS

VCE = 10 V   IC = 10 mA   f = 1 KHz

25

 

200

μS

td

Delay Time

IC  = 150 mA   IB = 15 mA VCC = 30 V

 

5

10

ns

tr

Rise Time

 

12

25

ns

ts

Storage Time

IC  = 150 mA   IB1 = - IB2 = 15 mA   VCC = 30 V

 

185

225

ns

tf

Fall Time

 

24

60

ns

*Pulsed: Pulse duration = 300μs, duty cycle ≤ 2 %

 

TO-92 Mechanical Data

DIM.


 

mm

inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.32

 

4.95

0.170

 

0.195

b

0.36

 

0.51

0.014

 

0.020

D

4.45

 

4.95

0.175

 

0.194

E

3.30

 

3.94

0.130

 

0.155

e

2.41

 

2.67

0.095

 

0.105

e1

1.14

 

1.40

0.045

 

0.055

L

12.70

 

15.49

0.500

 

0.609

R

2.16

 

2.41

0.085

 

0.094

S1

1.14

 

1.52

0.045

 

0.059

W

0.41

 

0.56

0.016

 

0.022

V

4 degree

 

6 degree

4 degree

 

6 degree

 

TO-92 Mechanical Data

 

TO-92 Ammopack Shipment (Suffix"-AP") Mechanical Data

DIM.


 

mm

inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

A1

 

 

4.80

 

 

0.189

T

 

 

3.80

 

 

0.150

T1

 

 

1.60

 

 

0.063

T2

 

 

2.30

 

 

0.091

d

 

 

0.48

 

 

0.019

P0

12.50

12.70

12.90

0.492

0.500

0.508

P2

5.65

6.35

7.05

0.222

0.250

0.278

F1,F2

2.44

2.54

2.94

0.096

0.100

0.116

delta H

-2.00

 

2.00

-0.079

 

0.079

W

17.50

18.00

19.00

0.689

0.709

0.748

W0

5.70

6.00

6.30

0.224

0.236

0.248

W1

8.50

9.00

9.25

0.335

0.354

0.364

W2

 

 

0.50

 

 

0.020

H

18.50

 

20.50

0.728

 

0.807

H0

15.50

16.00

16.50

0.610

0.630

0.650

H1

 

 

25.00

 

 

0.984

D0

3.80

4.00

4.20

0.150

0.157

0.165

t

 

 

0.90

 

 

0.035

L

 

 

11.00

 

 

0.433

I1

3.00

 

 

0.118

 

 

delta P

-1.00

 

1.00

-0.039

 

0.039

 

TO-92 Ammopack Shipment (Suffix-AP) Mechanical Data

 

PN2222A Datasheet

You can download the datasheet of PN2222A from the link given below:

PN2222A Datasheet

 

PN2222A FAQ

What is NPN transistor and its working?

NPN transistors are a type of bipolar transistor with three layers that are used for signal amplification. It is a device that is controlled by the current. A negative-positive-negative transistor is denoted by the abbreviation NPN. In an NPN transistor, the flow of electrons is what causes it to conduct.

 

Why is NPN transistor used?

NPN transistors are used in amplifying circuit applications. NPN transistors are used in the Darlington pair circuits for amplifying weak signals. NPN transistors are used in applications we need sinking current. NPN transistors are used in some classic amplifier circuits, the same as 'push-pull' amplifier circuits.

 

What does a NPN transistor made of?

A bipolar junction transistor is made up of three pieces of silicon. Depending on what is added to the silicon, it will be either N-type or P-type. An NPN transistor has a piece of P-type silicon (the base) sandwiched between two pieces of N-type (the collector and emitter).

 

Is NPN faster than PNP?

A npn transistor has electrons as majority charge carriers whereas the pnp transistor has holes as majority charge carrier. The mobility of electrons is better than mobility of holes. So a npn transistor is faster in operation than a pnp transistor.

 

Why NPN transistor is preferred over PNP?

The majority charge carriers in an NPN transistor are electrons and the majority carriers in a PNP transistor are holes. The electrons have better mobility than holes. Therefore, NPN transistors are preferred over PNP transistors.

 

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