MTB30P06VT4G MOSFET: Datasheet, Pinout, Features [FAQ]

Product Overview

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Catalog

MTB30P06VT4G Features

• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• AEC−Q101 Qualified and PPAP Capable − MTBV30P06V
• These Devices are Pb−Free and are RoHS Compliant

MTB30P06VT4G Pinout

The following figure is the diagram of MTB30P06VT4G pinout.

MTB30P06VT4G Pinout

Maximum Ratings

Ordering Information

Electrical Characteristics

Typical Electrical Characteristics

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus Drain Current and Temperature

Figure 4. On−Resistance versus Drain Current and Gate Voltage

Figure 5. On−Resistance Variation with Temperature

Figure 6. Drain−To−Source Leakage Current versus Voltage

Power Mosfet Switching

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged by current from the generator.

The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that

t = Q/IG(AV)

During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following:

tr = Q2 x RG/(VGG − VGSP)

tf = Q2 x RG/VGSP

where

VGG = the gate drive voltage, which varies from zero to VGG

RG = the gate drive resistance

and Q2 and VGSP are read from the gate charge curve.

During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are:

td(on) = RG Ciss In [VGG/(VGG − VGSP)]

td(off) = RG Ciss In (VGG/VGSP)

The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off).

At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified.

The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses.

Figure 7. Capacitance Variation

Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation versus Gate Resistance

Figure 10. Diode Forward Voltage versus Current

Safe Operating Area

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward

biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance−General Data and Its Use”

Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RJC).

A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an

increase of peak current in avalanche and peak junction temperature.

Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated.

Figure 11. Maximum Rated Forward Biased Safe Operating Area

Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature

Figure 13. Thermal Response

Figure 14. Diode Reverse Recovery Waveform

Figure 15. D2PAK Power Derating Curve

MTB30P06VT4G Package

The following diagram shows the MTB30P06VT4G package.

MTB30P06VT4G Package

MTB30P06VT4G Datasheet

You can download MTB30P06VT4G datasheet from the link given below:

MTB30P06VT4G Datasheet

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

MTB30P06VT4G FAQ

What modes is the Power MOSFET designed to withstand high energy?

Avalanche and commutation.

What is the Power MOSFET particularly well suited for?

Bridge circuits.

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain.

What is MOSFET and how it works?

A metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. It is used for switching or amplifying signals.

What is the difference between MOSFET and transistor?

The Bipolar Junction Transistor (BJT) is a current-driven device (in contrast, MOSFET is voltage-driven) that is widely used as an amplifier, oscillator, or switch, amongst other things. A BJT has three pins – the base, collector, and emitter – and two junctions: a p-junction and n-junction.