MMBT2222ALT1G General Purpose Transistor Datasheet PDF [FAQ]

Catalog

Features

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

MARKING DIAGRAM

ELECTRICAL CHARACTERISTICS

SWITCHING TIME EQUIVALENT TEST CIRCUITS

PACKAGE DIMENSIONS

Datasheet PDF Download

FAQ

Features

Pb-Free Packages are Available

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector - Emitter Voltage MMBT2222LT1 MMBT2222ALT1	VCEO	30 40	Vdc
Collector - Base Voltage MMBT2222LT1 MMBT2222ALT1	VCBO	60 75	Vdc
Emitter - Base Voltage MMBT2222LT1 MMBT2222ALT1	VEBO	5.0 6.0	Vdc
Collector Current - Continuous	IC	600	mAdc
Collector Current - Peak	ICM	1100	mAdc

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR- 5 Board (Note 1) TA = 25°C Derate above 25°C	PD	225 1.8	mW mW/°C
Thermal Resistance, Junction-to-Ambient	RθJA	556	° C/W
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C	PD	300 2.4	mW mW/°C
Thermal Resistance, Junction-to-Ambient	RθJA	417	° C/W
Junction and Storage Temperature Range	TJ, Tstg	-55 to +150	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.FR- 5 = 1.0 × 0.75 × 0.062 in.

2.Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.

3.Reference SOA

MARKING DIAGRAM

Figure-mmbt2222alt1g-Marking-Diagram

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222A	MMBT2222	V(BR)CEO	30 40	- -	Vdc
Collector - Base Breakdown Voltage (IC = 10 µAdc, IE = 0) MMBT2222A	MMBT2222	V(BR)CBO	60 75	- -	Vdc
Emitter - Base Breakdown Voltage (IE = 10 µAdc, IC = 0) MMBT2222A	MMBT2222	V(BR)EBO	5.0 6.0	- -	Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)	MMBT2222A	ICEX	-	10	nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)	MMBT2222	ICBO	-	0.01	µAdc
(VCB = 60 Vdc, IE = 0)	MMBT2222A		-	0.01
(VCB = 50 Vdc, IE = 0, TA = 125°C)	MMBT2222		-	10
(VCB = 60 Vdc, IE = 0, TA = 125°C)	MMBT2222A		-	10
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)	MMBT2222A	IEBO	-	100	nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)	MMBT2222A	IBL	-	20	nAdc

ON CHARACTERISTICS

DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc)		hFE	35	-	-
(IC = 1.0 mAdc, VCE = 10 Vdc)			50	-
(IC = 10 mAdc, VCE = 10 Vdc)			75	-
(IC = 10 mAdc, VCE = 10 Vdc, TA = -55°C)	MMBT2222A only		35	-
(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)			100	300
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)			50	-
(IC = 500 mAdc, VCE = 10 Vdc) (Note 4)	MMBT2222		30	-
	MMBT2222A		40	-
Collector - Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc)	MMBT2222	VCE(sat)	-	0.4	Vdc
	MMBT2222A		-	0.3
(IC = 500 mAdc, IB = 50 mAdc)	MMBT2222		-	1.6
	MMBT2222A		-	1.0
Base - Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc)	MMBT2222	VBE(sat)	-	1.3	Vdc
	MMBT2222A		0.6	1.2
(IC = 500 mAdc, IB = 50 mAdc)	MMBT2222		-	2.6
	MMBT2222A		-	2.0

SMALL-SIGNAL CHARACTERISTICS

Current - Gain - Bandwidth Product (Note 5) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)	MMBT2222 MMBT2222A	fT	250	- -	MHz
			300
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)		Cobo	-	8.0	pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)	MMBT2222	Cibo	- -	30	pF
	MMBT2222A			25
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	MMBT2222A	hie	2.0	8.0	kΩ
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	MMBT2222A		0.25	1.25
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	MMBT2222A	hre	- -	8.0	X 10- 4
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	MMBT2222A			4.0
Small - Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	MMBT2222A MMBT2222A	hfe	50	300	-
			75	375
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	MMBT2222A	hoe	5.0	35	µmhos
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	MMBT2222A		25	200

SMALL-SIGNAL CHARACTERISTICS

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A

rb, Cc

150

Noise Figure

(IC = 100 µAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222A

4.0

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time	(VCC = 30 Vdc, VBE(off) = - 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc)	td	-	10	ns
Rise Time		tr	-	25	ns
Storage Time	(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)	ts	-	225	ns
Fall Time	(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)	tf	-	60	ns

SWITCHING TIME EQUIVALENT TEST CIRCUITS

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-01

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-02

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-03

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-04

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-05

PACKAGE DIMENSIONS

Figure-PACKAGE-DIMENSIONS

Datasheet PDF Download

You can download the datasheet from the link given below.

MMBT2222ALT1G-Datasheet

FAQ

What is the difference between PNP and NPN transistors?

In an NPN transistor, a positive voltage is given to the collector terminal to produce a current flow from the collector to the emitter. In a PNP transistor, a positive voltage is given to the emitter terminal to produce current flow from the emitter to collector.

What is a transistor used for in everyday life?

Transistors are used in almost every electronics devices from stoves to computers and pacemakers to aircraft. 9. The military used the transistor's high-power radio frequency (RF) abilities in radar and hand-held two-way radios.

How does a transistor work as an amplifier?

A transistor acts as an amplifier by raising the strength of a weak signal. The DC bias voltage applied to the emitter base junction, makes it remain in forward biased condition. This forward bias is maintained regardless of the polarity of the signal.