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MMBT2222ALT1G General Purpose Transistor Datasheet PDF [FAQ]

Author: Irene
Date: 5 May 2022
 108
mmbt2222alt1g datasheet

 

Catalog

Features

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

MARKING DIAGRAM

ELECTRICAL CHARACTERISTICS

SWITCHING TIME EQUIVALENT TEST CIRCUITS

PACKAGE DIMENSIONS

Datasheet PDF Download

FAQ

 

Features

  • Pb-Free Packages are Available

 

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector - Emitter Voltage

MMBT2222LT1 MMBT2222ALT1

VCEO

 

30

40

Vdc

Collector - Base Voltage

MMBT2222LT1 MMBT2222ALT1

VCBO

 

60

75

Vdc

Emitter - Base Voltage

MMBT2222LT1 MMBT2222ALT1

VEBO

 

5.0

6.0

Vdc

Collector Current - Continuous

IC

600

mAdc

Collector Current - Peak 

ICM

1100

mAdc

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR- 5 Board (Note 1) TA = 25°C

Derate above 25°C

PD

 

225

1.8

 

mW mW/°C

Thermal Resistance, Junction-to-Ambient

RθJA

556

° C/W

Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C

PD

 

300

2.4

 

mW mW/°C

Thermal Resistance, Junction-to-Ambient

RθJA

417

° C/W

Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

 

1.FR- 5 = 1.0 × 0.75 × 0.062 in.

2.Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.

3.Reference SOA

 

MARKING DIAGRAM

Figure-mmbt2222alt1g-Marking-Diagram

 

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222A

MMBT2222

V(BR)CEO

30

40

-

-

Vdc

Collector - Base Breakdown Voltage (IC = 10 µAdc, IE = 0) MMBT2222A

MMBT2222

V(BR)CBO

60

75

-

-

Vdc

Emitter - Base Breakdown Voltage (IE = 10 µAdc, IC = 0) MMBT2222A

MMBT2222

V(BR)EBO

5.0

6.0

-

-

Vdc

Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

MMBT2222A

ICEX

-

10

nAdc

Collector Cutoff Current (VCB = 50 Vdc, IE = 0)

MMBT2222

ICBO

-

0.01

µAdc

(VCB = 60 Vdc, IE = 0)

MMBT2222A

 

-

0.01

 

(VCB = 50 Vdc, IE = 0, TA = 125°C)

MMBT2222

 

-

10

 

(VCB = 60 Vdc, IE = 0, TA = 125°C)

MMBT2222A

 

-

10

 

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)

MMBT2222A

IEBO

-

100

nAdc

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

MMBT2222A

IBL

-

20

nAdc

 

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

 

hFE

 

35

 

-

-

(IC = 1.0 mAdc, VCE = 10 Vdc)

 

 

50

-

 

(IC = 10 mAdc, VCE = 10 Vdc)

 

 

75

-

 

(IC = 10 mAdc, VCE = 10 Vdc, TA = -55°C)

MMBT2222A only

 

35

-

 

(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)

 

 

100

300

 

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)

 

 

50

-

 

(IC = 500 mAdc, VCE = 10 Vdc) (Note 4)

MMBT2222

 

30

-

 

 

MMBT2222A

 

40

-

 

Collector - Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc)

 

MMBT2222

VCE(sat)

 

-

 

0.4

Vdc

 

MMBT2222A

 

-

0.3

 

(IC = 500 mAdc, IB = 50 mAdc)

MMBT2222

 

-

1.6

 

 

MMBT2222A

 

-

1.0

 

Base - Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc)

 

MMBT2222

VBE(sat)

 

-

 

1.3

Vdc

 

MMBT2222A

 

0.6

1.2

 

(IC = 500 mAdc, IB = 50 mAdc)

MMBT2222

 

-

2.6

 

 

MMBT2222A

 

-

2.0

 

 

SMALL-SIGNAL CHARACTERISTICS

Current - Gain - Bandwidth Product (Note 5)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

 

MMBT2222 MMBT2222A

fT

 

250

 

-

-

MHz

300

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

 

-

 

8.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

 

MMBT2222

Cibo

 

-

-

 

30

pF

 

MMBT2222A

25

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

 

MMBT2222A

hie

 

2.0

 

8.0

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

0.25

1.25

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

 

MMBT2222A

hre

 

-

-

 

8.0

X 10- 4

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

4.0

 

Small - Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

 

MMBT2222A MMBT2222A

hfe

 

50

 

300

-

75

375

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

 

MMBT2222A

hoe

 

5.0

 

35

µmhos

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

25

200

 

SMALL-SIGNAL CHARACTERISTICS

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A

rb, Cc

 

-

 

150

ps

Noise Figure

(IC = 100 µAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222A

NF

 

-

 

4.0

dB

 

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time

(VCC = 30 Vdc, VBE(off) = - 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc)

td

-

10

 

ns

Rise Time

tr

-

25

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)

ts

-

225

 

ns

Fall Time

tf

-

60

 

SWITCHING TIME EQUIVALENT TEST CIRCUITS

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-01

 

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-02

 

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-03

 

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-04

 

SWITCHING-TIME-EQUIVALENT-TEST-CIRCUITS-05

 

PACKAGE DIMENSIONS

Figure-PACKAGE-DIMENSIONS

 

Datasheet PDF Download

You can download the datasheet from the link given below.

MMBT2222ALT1G-Datasheet

 

FAQ

What is the difference between PNP and NPN transistors?

In an NPN transistor, a positive voltage is given to the collector terminal to produce a current flow from the collector to the emitter. In a PNP transistor, a positive voltage is given to the emitter terminal to produce current flow from the emitter to collector.

 

What is a transistor used for in everyday life?

Transistors are used in almost every electronics devices from stoves to computers and pacemakers to aircraft. 9. The military used the transistor's high-power radio frequency (RF) abilities in radar and hand-held two-way radios.

 

How does a transistor work as an amplifier?

A transistor acts as an amplifier by raising the strength of a weak signal. The DC bias voltage applied to the emitter base junction, makes it remain in forward biased condition. This forward bias is maintained regardless of the polarity of the signal.

 

Ordering & Quality

Photo Mfr. Part # Company Description Package PDF Qty Pricing
(USD)
MMBT2222ALT1G MMBT2222ALT1G Company:ON Semiconductor Remark:TRANS NPN 40V 0.6A SOT23 Package:TO-236-3, SC-59, SOT-23-3
DataSheet
In Stock:159000
Inquiry
Price:
3000+: $0.02437
6000+: $0.02186
9000+: $0.01860
30000+: $0.01721
75000+: $0.01488
Inquiry

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