Catalog
Features
- RDS(on)= 3.9 mΩ (Typ.) @ VGS= 10 V, ID = 80 A
- QG(tot) = 92 nC (Typ.) @ VGS= 10 V
- Low Miller Charge
- Low QrrBody Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Synchronous Rectification for ATX / Server / Telecom PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
MOSFET Maximum Ratings
TC = 25°C unless otherwise noted
Symbol |
Parameter |
FDB045AN08A0 |
Units |
VDSS |
Drain to Source Voltage |
75 |
V |
VGS |
Gate to Source Voltage |
±20 |
V |
ID |
Drain Current Continuous (TC < 137℃, VGS = 10V) |
90 |
A |
Continuous (Tamb = 25℃, VGS = 10V, with RΘJA = 43℃/W) |
19 |
A |
Pulsed |
Figure 4 |
A |
EAS |
Single Pulse Avalanche Energy (Note 1) |
600 |
mJ |
PD |
Power dissipation |
310 |
W |
Derate above 25℃ |
2 |
W/℃ |
TJ, TSTG |
Operating and Storage Temperature |
-55 to 175 |
℃ |
Thermal Characteristics
RΘJC |
Thermal Resistance Junction to Case |
0.48 |
℃/W |
RΘJA |
Thermal Resistance Junction to Ambient (Note 2) |
62 |
℃/W |
RΘJA |
Thermal Resistance Junction to Ambient, 1in2 copper pad area |
43 |
℃/W |
Device Marking |
Device |
Package |
Reel Size |
Tape Width |
Quantity |
FDB045AN08A0 |
FDB045AN08A0 |
D2-PAK |
330 mm |
24 mm |
800 units |
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol |
Parameter |
Test Conditions |
Min |
Typ |
Max |
Units |
Off Characteristics |
BVDSS |
Drain to Source Breakdown Voltage |
ID = 250μA, VGS = 0V |
75 |
- |
- |
V |
IDSS |
Zero Gate Voltage Drain Current |
VDS = 60V |
- |
- |
1 |
μA |
VGS = 0V TC = 150℃ |
- |
- |
250 |
IGSS |
Gate to Source Leakage Current |
VGS = ±20V |
- |
- |
±100 |
nA |
On Characteristics |
VGS(TH) |
Gate to Source Threshold Voltage |
VGS = VDS, ID = 250μA |
2 |
- |
4 |
V |
rDS(ON) |
Drain to Source On Resistance |
ID = 80A, VGS = 10V |
- |
0.0039 |
0.0045 |
Ω |
ID = 37A, VGS = 6V |
- |
0.0056 |
0.0084 |
ID = 80A, VGS = 10V, TJ = 175℃ |
- |
0.008 |
0.011 |
Dynamic Characteristics |
CISS |
Input Capacitance |
VDS = 25V, VGS = 0V, f = 1MHz |
- |
6600 |
- |
pF |
COSS |
Output Capacitance |
- |
1000 |
- |
pF |
CRSS |
Reverse Transfer Capacitance |
- |
240 |
- |
pF |
Qg(TOT) |
Total Gate Charge at 10V |
VGS = 0V to 10V |
VDD = 40V |
|
92 |
138 |
nC |
Qg(TH) |
Threshold Gate Charge |
VGS = 0V to 2V |
- |
11 |
17 |
nC |
Qgs |
Gate to Source Gate Charge |
|
ID = 80A |
- |
27 |
- |
nC |
Qgs2 |
Gate Charge Threshold to Plateau |
Ig = 1.0mA |
- |
16 |
- |
nC |
Qgd |
Gate to Drain “Miller” Charge |
- |
21 |
- |
nC |
Switching Characteristics (VGS = 10V) |
tON |
Turn-On Time |
VDD = 40V, ID = 80A VGS = 10V, RGS = 3.3Ω |
- |
- |
160 |
ns |
td(ON) |
Turn-On Delay Time |
- |
18 |
- |
ns |
tr |
Rise Time |
- |
88 |
- |
ns |
td(OFF) |
Turn-Off Delay Time |
- |
40 |
- |
ns |
tf |
Fall Time |
- |
45 |
- |
ns |
tOFF |
Turn-Off Time |
- |
- |
128 |
ns |
Drain-Source Diode Characteristics |
VSD |
Source to Drain Diode Voltage |
ISD = 80A |
- |
- |
1.25 |
V |
ISD = 40A |
- |
- |
1 |
V |
trr |
Reverse Recovery Time |
ISD = 75A, dISD/dt = 100A/μs |
- |
- |
53 |
ns |
QRR |
Reverse Recovered Charge |
ISD = 75A, dISD/dt = 100A/μs |
- |
- |
54 |
nC |
Typical Characteristics
TC = 25°C unless otherwise noted
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA (℃), and thermal resistance RJA (℃/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
(EQ. 1)
In using surface mount devices such as the TO-263 package, the environment in which it is applied will have a significant influence on the part’s current and maximum power dissipation ratings. Precise determination of PDM is complex and influenced by many factors:
1.Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board.
2.The number of copper layers and the thickness of the board.
3.The use of external heat sinks.
4.The use of thermal vias.
5.Air flow and board orientation.
6.For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in.
Fairchild provides thermal information to assist the designer’s preliminary application evaluation. Figure 21 defines the RΘJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. The area, in square inches or square centimeters is the top copper area including the gate and source pads.
(EQ. 2) Area in Inches Squared
(EQ. 3) Area in Centimeters Squared
FDB045AN08A0 Datasheet
You can download the datasheet from the link given below:
FDB045AN08A0 Datasheet
FDB045AN08A0 Manufacturer
Onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Using Warning
Note: Please check their parameters and pin configuration before replacing them in your circuit.
FDB045AN08A0 FAQ
What is the N-Channel MOSFET?
A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel.
What is N channel and P channel?
N Channel MOSFETs turn on when a positive voltage of the appropriate threshold value is applied across the gate-to-source terminals. P Channel MOSFETs turn on by applying a given value of a negative gate-to-source voltage. The gating of MOSFETs determines their application in SMPS converters.
Why N channel MOSFET is widely used?
The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device. The N-channel transistor has lower on-resistance and gate capacitance for the same die area.
What are the advantage of N channel mosfet over P channel Mosfet?
The N-channel MOSFET has several advantages over the P-channel MOSFET. For example, the N-channel majority carriers (electrons) have a higher mobility than the P-channel majority carriers (holes). Because of this, the N-channel transistor has lower RDS(on) and gate capacitance for the same die area.
What is N in NPN transistor?
NPN transistors are a type of bipolar transistor with three layers that are used for signal amplification. A negative-positive-negative transistor is denoted by the abbreviation NPN. A p-type semiconductor is fused between two n-type semiconductor materials in this configuration.