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BPW34 PIN Photodiode Datasheet PDF Download [FAQ]

Author: Irene
Date: 27 Apr 2022
 98
bpw34 photodiode

 

Catalog

FEATURES

DESCRIPTION

APPLICATIONS

PRODUCT SUMMARY

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

BASIC CHARACTERISTICS

PACKAGE DIMENSIONS in millimeters

TUBE PACKAGING DIMENSIONS in millimeters

Datasheet PDF Download

BPW34 FAQ

 

FEATURES

  • Package type: leaded
  • Package form: top view
  • Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
  • Radiant sensitive area (in mm2): 7.5
  • High photo sensitivity
  • High radiant sensitivity
  • Suitable for visible and near infrared radiation
  • Fast response times
  • Angle of half sensitivity: ϕ = ± 65°
  • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC


DESCRIPTION

BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near infrared radiation. BPW34S is packed in tubes, specifications like BPW34.


APPLICATIONS

  • High speed photo detector


PRODUCT SUMMARY

COMPONENT

Ira (µA)

(deg)

l0.1 (nm)

BPW34

50

± 65

430 to 1100

BPW34S

50

± 65

430 to 1100


ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

BPW34

Bulk

MOQ: 3000 pcs, 3000 pcs/bulk

Top view

BPW34S

Tube

MOQ: 1800 pcs, 45 pcs/tube

Top view


ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

 

VR

60

V

Power dissipation

Tamb £ 25 °C

PV

215

mW

Junction temperature

 

Tj

100

°C

Operating temperature range

 

Tamb

- 40 to + 100

°C

Storage temperature range

 

Tstg

- 40 to + 100

°C

Soldering temperature

t £ 3 s

Tsd

260

°C

Thermal resistance junction/ambient

Connected with Cu wire, 0.14 mm2

RthJA

350

K/W


BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Breakdown voltage

IR = 100 µA, E = 0

V(BR)

60

 

 

V

Reverse dark current

VR = 10 V, E = 0

Iro

 

2

30

nA

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

CD

 

70

 

pF

VR = 3 V, f = 1 MHz, E = 0

CD

 

25

40

pF

Open circuit voltage

Ee = 1 mW/cm2, l = 950 nm

Vo

 

350

 

mV

Temperature coefficient of Vo

Ee = 1 mW/cm2, l = 950 nm

TKVo

 

- 2.6

 

mV/K

Short circuit current

EA = 1 klx

Ik

 

70

 

µA

Ee = 1 mW/cm2, l = 950 nm

Ik

 

47

 

µA

Temperature coefficient of Ik

Ee = 1 mW/cm2, l = 950 nm

TKIk

 

0.1

 

%/K

 

Reverse light current

EA = 1 klx, VR = 5 V

Ira

 

75

 

µA

Ee = 1 mW/cm2, l = 950 nm, VR = 5 V

Ira

40

50

 

µA

Angle of half sensitivity

 

j

 

± 65

 

deg

Wavelength of peak sensitivity

 

lp

 

900

 

nm

Range of spectral bandwidth

 

l0.1

 

430 to 1100

 

nm

Noise equivalent power

VR = 10 V, l = 950 nm

NEP

 

4 x 10-14

 

W/ÖHz

Rise time

VR = 10 V, RL = 1 kW, l = 820 nm

tr

 

100

 

ns

Fall time

VR = 10 V, RL = 1 kW, l = 820 nm

tf

 

100

 

ns

 

Figure-BASIC-CHARACTERISTICS

Figure-BASIC-CHARACTERISTICS-02

 


PACKAGE DIMENSIONS in millimeters

Figure-PACKAGE-DIMENSIONS


TUBE PACKAGING DIMENSIONS in millimeters

Figure-TUBE-PACKAGING-DIMENSIONS


Datasheet PDF Download

You can download the datasheet from the link given below.

BPW34-Datasheet

 

BPW34 FAQ

What is a PIN photodiode used for?

They are used in Photodetectors and photovoltaic cell and the PIN photodiodes are used for fibre optic network cards and also switches. These diodes are effectively used for RF protection circuits and it can also be utilized as an RF switch. The PIN photodiode is also used to detect X-rays and gamma rays photons.


Is PIN diode and photodiode same?

A Photodiode is a PN junction diode that operates in reverse bias. As the name suggests, PIN photodiode is a particular type of photodiode in which an intrinsic layer is placed in between a heavily doped p-type and a heavily doped n-type layer.

 

What is the difference between PN and PIN photodiode?

A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor.

 

What is the working principle of photodiode?

Principle of Photodiode: It works on the principle of the photoelectric effect. The operating principle of the photodiode is such that when the junction of this two terminal semiconductor device is illuminated then the electric current starts flowing through it.

 

What is the main advantage of PIN photodiode over PN photodiode?

The major advantage of the PIN photodiode, compared to the P-N junction, is the high response speed from the increased depletion region.

 

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