Catalog
FEATURES
- Package type: leaded
- Package form: top view
- Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
- Radiant sensitive area (in mm2): 7.5
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity: ϕ = ± 65°
- Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near infrared radiation. BPW34S is packed in tubes, specifications like BPW34.
APPLICATIONS
- High speed photo detector
PRODUCT SUMMARY
|
COMPONENT |
Ira (µA) |
j (deg) |
l0.1 (nm) |
|
BPW34 |
50 |
± 65 |
430 to 1100 |
|
BPW34S |
50 |
± 65 |
430 to 1100 |
ORDERING INFORMATION
|
ORDERING CODE |
PACKAGING |
REMARKS |
PACKAGE FORM |
|
BPW34 |
Bulk |
MOQ: 3000 pcs, 3000 pcs/bulk |
Top view |
|
BPW34S |
Tube |
MOQ: 1800 pcs, 45 pcs/tube |
Top view |
ABSOLUTE MAXIMUM RATINGS
|
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
|
Reverse voltage |
|
VR |
60 |
V |
|
Power dissipation |
Tamb £ 25 °C |
PV |
215 |
mW |
|
Junction temperature |
|
Tj |
100 |
°C |
|
Operating temperature range |
|
Tamb |
- 40 to + 100 |
°C |
|
Storage temperature range |
|
Tstg |
- 40 to + 100 |
°C |
|
Soldering temperature |
t £ 3 s |
Tsd |
260 |
°C |
|
Thermal resistance junction/ambient |
Connected with Cu wire, 0.14 mm2 |
RthJA |
350 |
K/W |
BASIC CHARACTERISTICS
|
PARAMETER |
TEST CONDITION |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
|
Breakdown voltage |
IR = 100 µA, E = 0 |
V(BR) |
60 |
|
|
V |
|
Reverse dark current |
VR = 10 V, E = 0 |
Iro |
|
2 |
30 |
nA |
|
Diode capacitance |
VR = 0 V, f = 1 MHz, E = 0 |
CD |
|
70 |
|
pF |
|
VR = 3 V, f = 1 MHz, E = 0 |
CD |
|
25 |
40 |
pF |
|
|
Open circuit voltage |
Ee = 1 mW/cm2, l = 950 nm |
Vo |
|
350 |
|
mV |
|
Temperature coefficient of Vo |
Ee = 1 mW/cm2, l = 950 nm |
TKVo |
|
- 2.6 |
|
mV/K |
|
Short circuit current |
EA = 1 klx |
Ik |
|
70 |
|
µA |
|
Ee = 1 mW/cm2, l = 950 nm |
Ik |
|
47 |
|
µA |
|
|
Temperature coefficient of Ik |
Ee = 1 mW/cm2, l = 950 nm |
TKIk |
|
0.1 |
|
%/K |
|
Reverse light current |
EA = 1 klx, VR = 5 V |
Ira |
|
75 |
|
µA |
|
Ee = 1 mW/cm2, l = 950 nm, VR = 5 V |
Ira |
40 |
50 |
|
µA |
|
|
Angle of half sensitivity |
|
j |
|
± 65 |
|
deg |
|
Wavelength of peak sensitivity |
|
lp |
|
900 |
|
nm |
|
Range of spectral bandwidth |
|
l0.1 |
|
430 to 1100 |
|
nm |
|
Noise equivalent power |
VR = 10 V, l = 950 nm |
NEP |
|
4 x 10-14 |
|
W/ÖHz |
|
Rise time |
VR = 10 V, RL = 1 kW, l = 820 nm |
tr |
|
100 |
|
ns |
|
Fall time |
VR = 10 V, RL = 1 kW, l = 820 nm |
tf |
|
100 |
|
ns |
PACKAGE DIMENSIONS in millimeters
TUBE PACKAGING DIMENSIONS in millimeters
Datasheet PDF Download
You can download the datasheet from the link given below.
BPW34 FAQ
What is a PIN photodiode used for?
They are used in Photodetectors and photovoltaic cell and the PIN photodiodes are used for fibre optic network cards and also switches. These diodes are effectively used for RF protection circuits and it can also be utilized as an RF switch. The PIN photodiode is also used to detect X-rays and gamma rays photons.
Is PIN diode and photodiode same?
A Photodiode is a PN junction diode that operates in reverse bias. As the name suggests, PIN photodiode is a particular type of photodiode in which an intrinsic layer is placed in between a heavily doped p-type and a heavily doped n-type layer.
What is the difference between PN and PIN photodiode?
A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor.
What is the working principle of photodiode?
Principle of Photodiode: It works on the principle of the photoelectric effect. The operating principle of the photodiode is such that when the junction of this two terminal semiconductor device is illuminated then the electric current starts flowing through it.
What is the main advantage of PIN photodiode over PN photodiode?
The major advantage of the PIN photodiode, compared to the P-N junction, is the high response speed from the increased depletion region.
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