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74HC10 Triple 3-Input NAND Gate Datasheet PDF Download

Author: Irene
Date: 19 Apr 2022
 1193
74hc10 datasheet

Ordering & Quality

Photo Mfr. Part # Company Description Package PDF Qty Pricing
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74HC107PW-118 74HC107PW-118 Company:Nexperia USA Inc. Remark:IC FF JK TYPE DUAL 1BIT 14TSSOP Package:14-TSSOP
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74HC109D-652 74HC109D-652 Company:Nexperia USA Inc. Remark:Flip Flop 2 Element JK Type 1 Bit Positive Edge 16-SOIC (0.154", 3.90mm Width) Package:16-SOIC (0.154"", 3.90mm Width)
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74HC109D-653 74HC109D-653 Company:Nexperia USA Inc. Remark:Flip Flop Element Bit Package:N/A
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74HC109D-Q100J 74HC109D-Q100J Company:Nexperia USA Inc. Remark:Flip Flop 2 Element JK Type 1 Bit Positive Edge 16-SOIC (0.154", 3.90mm Width) Package:16-SOIC (0.154"", 3.90mm Width)
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62500+: $0.12825
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74HC10DB-118 74HC10DB-118 Company:Nexperia USA Inc. Remark:NAND Gate IC 3 Channel 14-SSOP Package:14-SSOP (0.209", 5.30mm Width)
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Catalog

General Description

Features and Benefits

Ordering Information

Functional Diagram

Pinning Information

Functional Description

Limiting Values

Recommended Operating Conditions

Static Characteristics

Dynamic Characteristics

74HC10 Datasheet

74HC10 FAQ

 

General Description

The 74HC10; 74HCT10 is a triple 3-input NAND gate. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.

 

Features and Benefits

  • Complies with JEDEC standard JESD7A
  • Inputlevels:
    • For 74HC10: CMOS level
    • For 74HCT10: TTL level
  • Complies with JEDEC standard no.7A
  • ESD protection:
    • HBM JESD22-A114F exceeds 2000V
    • MM JESD22-A115-A exceeds 200V
  • Multiple package options
  • Specified from -40 °C to +85 °C and from -40 °C to +125°C

 

Ordering Information

Type number

Package

Temperature range

Name

Description

Version

74HC10D

-40 °C to +125 °C

SO14

plastic small outline package; 14 leads; body width 3.9 mm

SOT108-1

74HCT10D

74HC10PW

-40 °C to +125 °C

TSSOP14

plastic thin shrink small outline package; 14 leads; body width 4.4 mm

SOT402-1

74HCT10PW

 

Functional Diagram

Logic Symbol

Logic Symbol

 

 

IEC Logic Symbol

IEC Logic Symbol

 

 

Logic Diagram for One Gate

Logic Diagram for One Gate

 

Pinning Information

Pin Configuration SOT108-1 (SO14)

Pin Configuration SOT108-1 (SO14)

 

 

Pin Configuration SOT402-1 (TSSOP14)

Pin Configuration SOT402-1 (TSSOP14)

 

Pin Description

Symbol

Pin

Description

1A, 2A, 3A

1, 3, 9

data input

1B, 2B, 3B

2, 4, 10

data input

GND

7

ground (0 V)

1C, 2C, 3C

13, 5, 11

data input

1Y, 2Y, 3Y

12, 6, 8

data output

VCC

14

supply voltage

 

Functional Description

H = HIGH voltage level; L = LOW voltage level; X = don’t care

Input

Output

nA

nB

nC

nY

L

X

X

H

X

L

X

H

X

X

L

H

H

H

H

L

 

Limiting Values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). 

Symbol

Parameter

Conditions

Min

Max

Unit

VCC

supply voltage

 

-0.5

+7

V

IIK

input clamping current

VI < -0.5 V or VI > VCC + 0.5 V [1]

-

±20

mA

IOK

output clamping current

VO < -0.5 V or VO > VCC + 0.5 V [1]

-

±20

mA

IO

output current

-0.5 V < VO < VCC + 0.5 V

-

±25

mA

ICC

supply current

 

-

50

mA

IGND

ground current

 

-50

-

mA

Tstg

storage temperature

 

-65

+150

°C

Ptot

total power dissipation

[2]

-

500

mW

[1]The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2]For SOT108-1 (SO14) package: Ptot derates linearly with 10.1 mW/K above 100 °C. For SOT402-1 (TSSOP14) package: Ptot derates linearly with 7.3 mW/K above 81 °C.

 

Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

74HC10

74HCT10

Unit

Min

Typ

Max

Min

Typ

Max

VCC

supply voltage

 

2.0

5.0

6.0

4.5

5.0

5.5

V

VI

input voltage

 

0

-

VCC

0

-

VCC

V

VO

output voltage

 

0

-

VCC

0

-

VCC

V

Tamb

ambient temperature

 

-40

-

+125

-40

-

+125

°C

Δt/ΔV

input transition rise and fall rate

VCC = 2.0 V

-

-

625

-

-

-

ns/V

VCC = 4.5 V

-

1.67

139

-

1.67

139

ns/V

VCC = 6.0 V

-

-

83

-

-

-

ns/V

 

Static Characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

25 °C

-40 °C to +85 °C

-40 °C to +125 °C

Unit

Min

Typ

Max

Min

Max

Min

Max

VIH

HIGH-level input voltage

VCC = 2.0 V

1.5

1.2

-

1.5

-

1.5

-

V

VCC = 4.5 V

3.15

2.4

-

3.15

-

3.15

-

V

VCC = 6.0 V

4.2

3.2

-

4.2

-

4.2

-

V

VIL

LOW-level input voltage

VCC = 2.0 V

-

0.8

0.5

-

0.5

-

0.5

V

VCC = 4.5 V

-

2.1

1.35

-

1.35

-

1.35

V

VCC = 6.0 V

-

2.8

1.8

-

1.8

-

1.8

V

VOH

HIGH-level output voltage

VI = VIH or VIL

 

 

 

 

 

 

 

 

IO = -20 μA; VCC = 2.0 V

1.9

2.0

-

1.9

-

1.9

-

V

IO = -20 μA; VCC = 4.5 V

4.4

4.5

-

4.4

-

4.4

-

V

IO = -20 μA; VCC = 6.0 V

5.9

6.0

-

5.9

-

5.9

-

V

IO = -4.0 mA; VCC = 4.5 V

3.98

4.32

-

3.84

-

3.7

-

V

IO = -5.2 mA; VCC = 6.0 V

5.48

5.81

-

5.34

-

5.2

-

V

VOL

LOW-level output voltage

VI = VIH or VIL

 

 

 

 

 

 

 

 

IO = 20 μA; VCC = 2.0 V

-

0

0.1

-

0.1

-

0.1

V

IO = 20 μA; VCC = 4.5 V

-

0

0.1

-

0.1

-

0.1

V

IO = 20 μA; VCC = 6.0 V

-

0

0.1

-

0.1

-

0.1

V

IO = 4.0 mA; VCC = 4.5 V

-

0.15

0.26

-

0.33

-

0.4

V

IO = 5.2 mA; VCC = 6.0 V

-

0.16

0.26

-

0.33

-

0.4

V

II

input leakage current

VI = VCC or GND; VCC = 6.0 V

-

-

±0.1

-

±1

-

±1

μA

ICC

supply current

VI = VCC or GND; IO = 0 A; VCC = 6.0 V

-

-

2.0

-

20

-

40

μA

CI

input capacitance

 

-

3.5

-

-

-

-

-

pF

 

Dynamic Characteristics

GND = 0 V; CL = 50 pF; for test circuit, see Figure.

Symbol

Parameter

Conditions

25 °C

-40 °C to

+85 °C

-40 °C to

+125 °C

Unit

Min

Typ

Max

Max

Max

tpd

propagation delay

nA, nB to nY; see Figure [1]

 

 

 

 

 

 

VCC = 2.0 V

-

30

95

120

145

ns

VCC = 4.5 V

-

11

19

24

29

ns

VCC = 5.0 V; CL = 15 pF

-

9

-

-

-

ns

VCC = 6.0 V

-

9

16

20

25

ns

tt

transition time

see Figure [2]

 

 

 

 

 

 

VCC = 2.0 V

-

19

75

95

110

ns

VCC = 4.5 V

-

7

15

19

22

ns

VCC = 6.0 V

-

6

13

16

19

ns

CPD

power dissipation capacitance

per package; VI = GND to VCC [3]

-

12

-

-

-

pF

[1]tpd is the same as tPHL and tPLH.

[2]tt is the same as tTHL and tTLH.

[3]CPD is used to determine the dynamic power dissipation (PD in μW): PD = CPD x VCC 2 x fi x N + Σ(CL x VCC2 x fo) where: fi = input frequency in MHz;  fo = output frequency in MHz;

CL = output load capacitance in pF; VCC = supply voltage in V;

N = number of inputs switching; Σ(CL x VCC 2 x fo) = sum of outputs.

 

74HC10 Datasheet

You can download the datasheet of 74HC10 from the link given below:

74HC10 Datasheet

 

74HC10 FAQ

Can NAND gate have 3 inputs?

As with the AND function seen previously, the NAND function can also have any number of individual inputs and commercial available NAND Gate IC's are available in standard 2, 3, or 4 input types. If additional inputs are required, then the standard NAND gates can be cascaded together to provide more inputs for example.

 

What is 3 input NAND gate?

The 3-input NAND Gate
Unlike the 2-input NAND gate, the 3-input NAND gate has three inputs. The Boolean expression of the logic NAND gate is defined as the binary operation dot(.). The NAND gate can be cascaded together to form any number of individual inputs. There are 23=8 possible combinations of inputs.

 

What is function of a NAND gate?

In digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate.

 

What is NAND truth table?

The NAND gate is a combination of an AND gate and NOT gate. They are connected in cascade form. It is also called Negated And gate. The NAND gate provides the false or low output only when their outputs is high or true.

 

What is a NAND?

NAND Flash is a type of non-volatile storage technology that does not require power to retain data. An everyday example would be a mobile phone, with the NAND Flash (or the memory chip as it's sometimes called) being where data files such as photos, videos and music are stored on a microSD card.

 

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