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2N7002LT1G Transistors: Specifications PDF, Attributes, and Parameters

Author: Irene
Date: 21 Jan 2022
 1057
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2N7002LT1G 2N7002LT1G Company:ON Semiconductor Remark:MOSFET N-CH 60V 0.115A SOT-23 Package:SOT-23-3 (TO-236)
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The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current.

Catalog

Product Overview

CAD Models

Package Dimensions

Soldering Footprint

Features and Benefits

2N7002LT1G Product Attribute

2N7002LT1G Applications

Alternate Products

Using Warnings

Parts Comparisons


Product Overview

The ON Semiconductor MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.


CAD Models

2N7002LT1G Symbol

2N7002LT1G Symbol

 

2N7002LT1G Footprint

2N7002LT1G Footprint

 

2N7002LT1G 3D Model

2N7002LT1G 3D Model


Package Dimensions

Package Dimensions


Soldering Footprint

Soldering Footprint


Features and Benefits

• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable (2V7002L)
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant


2N7002LT1G Product Attribute

Case/Package:

SOT-23-3

Contact Plating:

Tin

Continuous Drain Current (ID):

115 mA

Current Rating:

115 mA

Drain to Source Breakdown Voltage:

60 V

Drain to Source Resistance:

7.5 Ω

Drain to Source Voltage (Vdss):

60 V

Element Configuration:

Single

Gate to Source Voltage (Vgs):

20 V

Input Capacitance:

50 pF

Max Junction Temperature (Tj):

150 °C

Max Operating Temperature:

150 °C

Max Power Dissipation:

225 mW

Min Operating Temperature:

-55 °C

MSL Level

MSL 1 - Unlimited

Nominal Vgs:

2.5 V

Number of Channels:

1

Number of Elements:

1

Number of Pins:

3

Packaging:

Cut Tape

Power Dissipation:

225 mW

Rds On Max:

7.5 Ω

Resistance:

7.5 Ω

Schedule B:

8541210080

Threshold Voltage:

1 V

Turn-Off Delay Time:

40 ns

Turn-On Delay Time:

20 ns

Voltage Rating (DC):

60 V

Height:

1.01 mm

Length:

3.04 mm

Width:

1.4 mm

Halogen Free:

Halogen Free

Lead Free:

Lead Free

Radiation Hardening:

No

REACH SVHC:

No SVHC

RoHS:

Compliant

Lead Shape:

Gull-wing


2N7002LT1G Applications

• Servo Motor Control
• Power MOSFET Gate Drivers


Alternate Products

2N7002L, 2N7002E-T1, 2N7002TRL13, 2N7002LT3, 2N7002L6327, 2N7002-T1, 2N7002H-7, 2N7002A-13, 2N7002A-7


Using Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.


Parts Comparisons

Table1. 2N7002LT1G vs 2N7002L

Parameters

2N7002LT1G

2N7002L

Source Content uid

2N7002LT1G

*

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

MOTOROLA INC

Part Package Code

SOT-23

*

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SMALL OUTLINE, R-PDSO-G3

Pin Count

3

*

Manufacturer Package Code

318-08

*

Reach Compliance Code

compliant

unknown

ECCN Code

EAR99

EAR99

HTS Code

8541.21.00.95

8541.21.00.95

Factory Lead Time

1 Week

*

Samacsys Description

2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.115 A

*

Drain Current-Max (ID)

0.115 A

0.115 A

Drain-source On Resistance-Max

7.5 Ω

7.5 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

5 pF

5 pF

JEDEC-95 Code

TO-236

TO-236AB

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e0

Moisture Sensitivity Level

1

*

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

150 °C

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

*

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

Tin/Lead (Sn/Pb)

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

NOT SPECIFIED

Transistor Application

SWITCHING

*

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

3

Rohs Code

*

 No

Power Dissipation Ambient-Max

*

0.2 W

 

Table 2. 2N7002LT1G vs 2N7002E-T1

Parameters

2N7002LT1G

2N7002E-T1

Source Content uid

2N7002LT1G

*

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

VISHAY SILICONIX

Part Package Code

SOT-23

SOT-23

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SMALL OUTLINE, R-PDSO-G3

Pin Count

3

3

Manufacturer Package Code

318-08

*

Reach Compliance Code

compliant

compliant

ECCN Code

EAR99

EAR99

HTS Code

8541.21.00.95

*

Factory Lead Time

1 Week

*

Samacsys Description

2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.115 A

*

Drain Current-Max (ID)

0.115 A

0.24 A

Drain-source On Resistance-Max

7.5 Ω

3 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

5 pF

*

JEDEC-95 Code

TO-236

TO-236

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e0

Moisture Sensitivity Level

1

*

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

*

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

*

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

TIN LEAD

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

NOT SPECIFIED

Transistor Application

SWITCHING

SWITCHING

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

3

Rohs Code

*

 No

 

Table 3. 2N7002LT1G vs 2N7002TRL13

Parameters

2N7002LT1G

2N7002TRL13

Source Content uid

2N7002LT1G

*

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

PHILIPS COMPONENTS

Part Package Code

SOT-23

*

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SMALL OUTLINE, R-PDSO-G3

Pin Count

3

*

Manufacturer Package Code

318-08

*

Reach Compliance Code

compliant

unknown

ECCN Code

EAR99

EAR99

HTS Code

8541.21.00.95

*

Factory Lead Time

1 Week

*

Samacsys Description

2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.115 A

*

Drain Current-Max (ID)

0.115 A

0.18 A

Drain-source On Resistance-Max

7.5 Ω

5 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

5 pF

*

JEDEC-95 Code

TO-236

*

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

*

Moisture Sensitivity Level

1

*

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

*

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

*

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

*

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

*

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

*

Transistor Application

SWITCHING

SWITCHING

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

1

 

Table 4. 2N7002LT1G vs 2N7002LT3

Parameters

2N7002LT1G

2N7002LT3

Source Content uid

2N7002LT1G

2N7002LT3

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

ON SEMICONDUCTOR

Part Package Code

SOT-23

SOT-23

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SMALL OUTLINE, R-PDSO-G3

Pin Count

3

3

Manufacturer Package Code

318-08

CASE 318-08

Reach Compliance Code

compliant

not_compliant

ECCN Code

EAR99

EAR99

HTS Code

8541.21.00.95

*

Factory Lead Time

1 Week

*

Samacsys Description

2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.115 A

0.115 A

Drain Current-Max (ID)

0.115 A

0.115 A

Drain-source On Resistance-Max

7.5 Ω

7.5 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

5 pF

5 pF

JEDEC-95 Code

TO-236

TO-236AB

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e0

Moisture Sensitivity Level

1

1

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

150 °C

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

240

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

0.3 W

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

Tin/Lead (Sn80Pb20)

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

30

Transistor Application

SWITCHING

SWITCHING

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

3

Rohs Code

*

 No

 

Tablre 5. 2N7002LT1G vs 2N7002L6327

Parameters

2N7002LT1G

2N7002L6327

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

INFINEON TECHNOLOGIES AG

Part Package Code

SOT-23

*

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SMALL OUTLINE, R-PDSO-G3

Pin Count

3

3

Manufacturer Package Code

318-08

*

Reach Compliance Code

compliant

compliant

ECCN Code

EAR99

EAR99

HTS Code

8541.21.00.95

*

Factory Lead Time

1 Week

*

Samacsys Description

2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.115 A

0.3 A

Drain Current-Max (ID)

0.115 A

0.3 A

Drain-source On Resistance-Max

7.5 Ω

3 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

5 pF

3 pF

JEDEC-95 Code

TO-236

*

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e3

Moisture Sensitivity Level

1

1

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

150 °C

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

260

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

0.5 W

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

MATTE TIN

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

40

Transistor Application

SWITCHING

SWITCHING

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

1

Rohs Code

*

 Yes

Additional Feature

*

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

 

Table 6. 2N7002LT1G vs 2N7002-T1

Parameters

2N7002LT1G

2N7002-T1

Pbfree Code

 Yes

*

Part Life Cycle Code

Active

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

VISHAY SILICONIX

Part Package Code

SOT-23

SOT-23

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SMALL OUTLINE, R-PDSO-G3

Pin Count

3

3

Manufacturer Package Code

318-08

*

Reach Compliance Code

compliant

compliant

ECCN Code

EAR99

EAR99

HTS Code

8541.21.00.95

*

Factory Lead Time

1 Week

*

Samacsys Description

2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23

*

Samacsys Manufacturer

ON Semiconductor

*

Configuration

SINGLE WITH BUILT-IN DIODE

SINGLE

DS Breakdown Voltage-Min

60 V

60 V

Drain Current-Max (Abs) (ID)

0.115 A

*

Drain Current-Max (ID)

0.115 A

0.115 A

Drain-source On Resistance-Max

7.5 Ω

7.5 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

5 pF

5 pF

JEDEC-95 Code

TO-236

TO-236

JESD-30 Code

R-PDSO-G3

R-PDSO-G3

JESD-609 Code

e3

e0

Moisture Sensitivity Level

1

*

Number of Elements

1

1

Number of Terminals

3

3

Operating Mode

ENHANCEMENT MODE

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

150 °C

Operating Temperature-Min

-55 °C

*

Package Body Material

PLASTIC/EPOXY

PLASTIC/EPOXY

Package Shape

RECTANGULAR

RECTANGULAR

Package Style

SMALL OUTLINE

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

240

Polarity/Channel Type

N-CHANNEL

N-CHANNEL

Power Dissipation-Max (Abs)

0.3 W

*

Qualification Status

Not Qualified

Not Qualified

Surface Mount

YES

YES

Terminal Finish

Tin (Sn)

Tin/Lead (Sn/Pb)

Terminal Form

GULL WING

GULL WING

Terminal Position

DUAL

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

30

Transistor Application

SWITCHING

SWITCHING

Transistor Element Material

SILICON

SILICON

Base Number Matches

1

2

Rohs Code

*

 No

Additional Feature

*

LOW THRESHOLD

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