Ordering & Quality
Photo |
Mfr. Part # |
Company |
Description |
Package |
PDF |
Qty |
Pricing
(USD) |
|
|
2N7002LT1G |
Company:ON Semiconductor |
|
Package:SOT-23-3 (TO-236) |
DataSheet |
In Stock:351000
Buy
|
Price:
3000+: |
$0.03275 |
6000+: |
$0.02938 |
9000+: |
$0.02500 |
30000+: |
$0.02313 |
75000+: |
$0.02000 |
|
Buy |
|
The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current.
Catalog
Product Overview
The ON Semiconductor MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.
CAD Models
2N7002LT1G Symbol
2N7002LT1G Footprint
2N7002LT1G 3D Model
Package Dimensions
Features and Benefits
• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable (2V7002L)
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
2N7002LT1G Product Attribute
Case/Package:
|
SOT-23-3
|
Contact Plating:
|
Tin
|
Continuous Drain Current (ID):
|
115 mA
|
Current Rating:
|
115 mA
|
Drain to Source Breakdown Voltage:
|
60 V
|
Drain to Source Resistance:
|
7.5 Ω
|
Drain to Source Voltage (Vdss):
|
60 V
|
Element Configuration:
|
Single
|
Gate to Source Voltage (Vgs):
|
20 V
|
Input Capacitance:
|
50 pF
|
Max Junction Temperature (Tj):
|
150 °C
|
Max Operating Temperature:
|
150 °C
|
Max Power Dissipation:
|
225 mW
|
Min Operating Temperature:
|
-55 °C
|
MSL Level
|
MSL 1 - Unlimited
|
Nominal Vgs:
|
2.5 V
|
Number of Channels:
|
1
|
Number of Elements:
|
1
|
Number of Pins:
|
3
|
Packaging:
|
Cut Tape
|
Power Dissipation:
|
225 mW
|
Rds On Max:
|
7.5 Ω
|
Resistance:
|
7.5 Ω
|
Schedule B:
|
8541210080
|
Threshold Voltage:
|
1 V
|
Turn-Off Delay Time:
|
40 ns
|
Turn-On Delay Time:
|
20 ns
|
Voltage Rating (DC):
|
60 V
|
Height:
|
1.01 mm
|
Length:
|
3.04 mm
|
Width:
|
1.4 mm
|
Halogen Free:
|
Halogen Free
|
Lead Free:
|
Lead Free
|
Radiation Hardening:
|
No
|
REACH SVHC:
|
No SVHC
|
RoHS:
|
Compliant
|
Lead Shape:
|
Gull-wing
|
2N7002LT1G Applications
• Servo Motor Control
• Power MOSFET Gate Drivers
Alternate Products
2N7002L, 2N7002E-T1, 2N7002TRL13, 2N7002LT3, 2N7002L6327, 2N7002-T1, 2N7002H-7, 2N7002A-13, 2N7002A-7
Using Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Parts Comparisons
Table1. 2N7002LT1G vs 2N7002L
Parameters
|
2N7002LT1G
|
2N7002L
|
Source Content uid
|
2N7002LT1G
|
*
|
Pbfree Code
|
Yes
|
*
|
Part Life Cycle Code
|
Active
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
MOTOROLA INC
|
Part Package Code
|
SOT-23
|
*
|
Package Description
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count
|
3
|
*
|
Manufacturer Package Code
|
318-08
|
*
|
Reach Compliance Code
|
compliant
|
unknown
|
ECCN Code
|
EAR99
|
EAR99
|
HTS Code
|
8541.21.00.95
|
8541.21.00.95
|
Factory Lead Time
|
1 Week
|
*
|
Samacsys Description
|
2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23
|
*
|
Samacsys Manufacturer
|
ON Semiconductor
|
*
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
60 V
|
Drain Current-Max (Abs) (ID)
|
0.115 A
|
*
|
Drain Current-Max (ID)
|
0.115 A
|
0.115 A
|
Drain-source On Resistance-Max
|
7.5 Ω
|
7.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
5 pF
|
5 pF
|
JEDEC-95 Code
|
TO-236
|
TO-236AB
|
JESD-30 Code
|
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
e0
|
Moisture Sensitivity Level
|
1
|
*
|
Number of Elements
|
1
|
1
|
Number of Terminals
|
3
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
*
|
Package Body Material
|
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.3 W
|
*
|
Qualification Status
|
Not Qualified
|
Not Qualified
|
Surface Mount
|
YES
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
GULL WING
|
GULL WING
|
Terminal Position
|
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
*
|
Transistor Element Material
|
SILICON
|
SILICON
|
Base Number Matches
|
1
|
3
|
Rohs Code
|
*
|
No
|
Power Dissipation Ambient-Max
|
*
|
0.2 W
|
Table 2. 2N7002LT1G vs 2N7002E-T1
Parameters
|
2N7002LT1G
|
2N7002E-T1
|
Source Content uid
|
2N7002LT1G
|
*
|
Pbfree Code
|
Yes
|
*
|
Part Life Cycle Code
|
Active
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
VISHAY SILICONIX
|
Part Package Code
|
SOT-23
|
SOT-23
|
Package Description
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count
|
3
|
3
|
Manufacturer Package Code
|
318-08
|
*
|
Reach Compliance Code
|
compliant
|
compliant
|
ECCN Code
|
EAR99
|
EAR99
|
HTS Code
|
8541.21.00.95
|
*
|
Factory Lead Time
|
1 Week
|
*
|
Samacsys Description
|
2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23
|
*
|
Samacsys Manufacturer
|
ON Semiconductor
|
*
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
60 V
|
Drain Current-Max (Abs) (ID)
|
0.115 A
|
*
|
Drain Current-Max (ID)
|
0.115 A
|
0.24 A
|
Drain-source On Resistance-Max
|
7.5 Ω
|
3 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
5 pF
|
*
|
JEDEC-95 Code
|
TO-236
|
TO-236
|
JESD-30 Code
|
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
e0
|
Moisture Sensitivity Level
|
1
|
*
|
Number of Elements
|
1
|
1
|
Number of Terminals
|
3
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
*
|
Operating Temperature-Min
|
-55 °C
|
*
|
Package Body Material
|
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.3 W
|
*
|
Qualification Status
|
Not Qualified
|
Not Qualified
|
Surface Mount
|
YES
|
YES
|
Terminal Finish
|
Tin (Sn)
|
TIN LEAD
|
Terminal Form
|
GULL WING
|
GULL WING
|
Terminal Position
|
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
SILICON
|
Base Number Matches
|
1
|
3
|
Rohs Code
|
*
|
No
|
Table 3. 2N7002LT1G vs 2N7002TRL13
Parameters
|
2N7002LT1G
|
2N7002TRL13
|
Source Content uid
|
2N7002LT1G
|
*
|
Pbfree Code
|
Yes
|
*
|
Part Life Cycle Code
|
Active
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
PHILIPS COMPONENTS
|
Part Package Code
|
SOT-23
|
*
|
Package Description
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count
|
3
|
*
|
Manufacturer Package Code
|
318-08
|
*
|
Reach Compliance Code
|
compliant
|
unknown
|
ECCN Code
|
EAR99
|
EAR99
|
HTS Code
|
8541.21.00.95
|
*
|
Factory Lead Time
|
1 Week
|
*
|
Samacsys Description
|
2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23
|
*
|
Samacsys Manufacturer
|
ON Semiconductor
|
*
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
60 V
|
Drain Current-Max (Abs) (ID)
|
0.115 A
|
*
|
Drain Current-Max (ID)
|
0.115 A
|
0.18 A
|
Drain-source On Resistance-Max
|
7.5 Ω
|
5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
5 pF
|
*
|
JEDEC-95 Code
|
TO-236
|
*
|
JESD-30 Code
|
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
*
|
Moisture Sensitivity Level
|
1
|
*
|
Number of Elements
|
1
|
1
|
Number of Terminals
|
3
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
*
|
Operating Temperature-Min
|
-55 °C
|
*
|
Package Body Material
|
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
*
|
Polarity/Channel Type
|
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.3 W
|
*
|
Qualification Status
|
Not Qualified
|
Not Qualified
|
Surface Mount
|
YES
|
YES
|
Terminal Finish
|
Tin (Sn)
|
*
|
Terminal Form
|
GULL WING
|
GULL WING
|
Terminal Position
|
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
*
|
Transistor Application
|
SWITCHING
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
SILICON
|
Base Number Matches
|
1
|
1
|
Table 4. 2N7002LT1G vs 2N7002LT3
Parameters
|
2N7002LT1G
|
2N7002LT3
|
Source Content uid
|
2N7002LT1G
|
2N7002LT3
|
Pbfree Code
|
Yes
|
*
|
Part Life Cycle Code
|
Active
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
ON SEMICONDUCTOR
|
Part Package Code
|
SOT-23
|
SOT-23
|
Package Description
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count
|
3
|
3
|
Manufacturer Package Code
|
318-08
|
CASE 318-08
|
Reach Compliance Code
|
compliant
|
not_compliant
|
ECCN Code
|
EAR99
|
EAR99
|
HTS Code
|
8541.21.00.95
|
*
|
Factory Lead Time
|
1 Week
|
*
|
Samacsys Description
|
2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23
|
*
|
Samacsys Manufacturer
|
ON Semiconductor
|
*
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
60 V
|
Drain Current-Max (Abs) (ID)
|
0.115 A
|
0.115 A
|
Drain Current-Max (ID)
|
0.115 A
|
0.115 A
|
Drain-source On Resistance-Max
|
7.5 Ω
|
7.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
5 pF
|
5 pF
|
JEDEC-95 Code
|
TO-236
|
TO-236AB
|
JESD-30 Code
|
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
e0
|
Moisture Sensitivity Level
|
1
|
1
|
Number of Elements
|
1
|
1
|
Number of Terminals
|
3
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
*
|
Package Body Material
|
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
240
|
Polarity/Channel Type
|
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.3 W
|
0.3 W
|
Qualification Status
|
Not Qualified
|
Not Qualified
|
Surface Mount
|
YES
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Tin/Lead (Sn80Pb20)
|
Terminal Form
|
GULL WING
|
GULL WING
|
Terminal Position
|
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
30
|
Transistor Application
|
SWITCHING
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
SILICON
|
Base Number Matches
|
1
|
3
|
Rohs Code
|
*
|
No
|
Tablre 5. 2N7002LT1G vs 2N7002L6327
Parameters
|
2N7002LT1G
|
2N7002L6327
|
Pbfree Code
|
Yes
|
*
|
Part Life Cycle Code
|
Active
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
INFINEON TECHNOLOGIES AG
|
Part Package Code
|
SOT-23
|
*
|
Package Description
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count
|
3
|
3
|
Manufacturer Package Code
|
318-08
|
*
|
Reach Compliance Code
|
compliant
|
compliant
|
ECCN Code
|
EAR99
|
EAR99
|
HTS Code
|
8541.21.00.95
|
*
|
Factory Lead Time
|
1 Week
|
*
|
Samacsys Description
|
2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23
|
*
|
Samacsys Manufacturer
|
ON Semiconductor
|
*
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
60 V
|
Drain Current-Max (Abs) (ID)
|
0.115 A
|
0.3 A
|
Drain Current-Max (ID)
|
0.115 A
|
0.3 A
|
Drain-source On Resistance-Max
|
7.5 Ω
|
3 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
5 pF
|
3 pF
|
JEDEC-95 Code
|
TO-236
|
*
|
JESD-30 Code
|
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
e3
|
Moisture Sensitivity Level
|
1
|
1
|
Number of Elements
|
1
|
1
|
Number of Terminals
|
3
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
*
|
Package Body Material
|
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.3 W
|
0.5 W
|
Qualification Status
|
Not Qualified
|
Not Qualified
|
Surface Mount
|
YES
|
YES
|
Terminal Finish
|
Tin (Sn)
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
GULL WING
|
Terminal Position
|
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
40
|
Transistor Application
|
SWITCHING
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
SILICON
|
Base Number Matches
|
1
|
1
|
Rohs Code
|
*
|
Yes
|
Additional Feature
|
*
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Table 6. 2N7002LT1G vs 2N7002-T1
Parameters
|
2N7002LT1G
|
2N7002-T1
|
Pbfree Code
|
Yes
|
*
|
Part Life Cycle Code
|
Active
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
VISHAY SILICONIX
|
Part Package Code
|
SOT-23
|
SOT-23
|
Package Description
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count
|
3
|
3
|
Manufacturer Package Code
|
318-08
|
*
|
Reach Compliance Code
|
compliant
|
compliant
|
ECCN Code
|
EAR99
|
EAR99
|
HTS Code
|
8541.21.00.95
|
*
|
Factory Lead Time
|
1 Week
|
*
|
Samacsys Description
|
2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23
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*
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Samacsys Manufacturer
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ON Semiconductor
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*
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Configuration
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SINGLE WITH BUILT-IN DIODE
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SINGLE
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DS Breakdown Voltage-Min
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60 V
|
60 V
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Drain Current-Max (Abs) (ID)
|
0.115 A
|
*
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Drain Current-Max (ID)
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0.115 A
|
0.115 A
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Drain-source On Resistance-Max
|
7.5 Ω
|
7.5 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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5 pF
|
5 pF
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JEDEC-95 Code
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TO-236
|
TO-236
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JESD-30 Code
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R-PDSO-G3
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R-PDSO-G3
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JESD-609 Code
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e3
|
e0
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Moisture Sensitivity Level
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1
|
*
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Number of Elements
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1
|
1
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Number of Terminals
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3
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3
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Operating Mode
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ENHANCEMENT MODE
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
|
150 °C
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Operating Temperature-Min
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-55 °C
|
*
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Package Body Material
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PLASTIC/EPOXY
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
|
SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
|
240
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Polarity/Channel Type
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N-CHANNEL
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N-CHANNEL
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Power Dissipation-Max (Abs)
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0.3 W
|
*
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Qualification Status
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Not Qualified
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Not Qualified
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Surface Mount
|
YES
|
YES
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Terminal Finish
|
Tin (Sn)
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Tin/Lead (Sn/Pb)
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Terminal Form
|
GULL WING
|
GULL WING
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Terminal Position
|
DUAL
|
DUAL
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Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
30
|
Transistor Application
|
SWITCHING
|
SWITCHING
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Transistor Element Material
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SILICON
|
SILICON
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Base Number Matches
|
1
|
2
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Rohs Code
|
*
|
No
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Additional Feature
|
*
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LOW THRESHOLD
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