Home  Product Technical Articles   2N2907 Transistor: Datasheet, Equivalent, Circuit [Video]

2N2907 Transistor: Datasheet, Equivalent, Circuit [Video]

Author: Iggy
Date: 20 Jan 2022
 11210
2n2907 transistor

Ordering & Quality

Photo Mfr. Part # Company Description Package PDF Qty Pricing
(USD)
2N2907 2N2907 Company:ON Semiconductor Remark:Bipolar (BJT) Transistor PNP 40V 600mA 400mW Through Hole TO-18 Package:TO-206AA, TO-18-3 Metal Can
DataSheet
In Stock:On Order
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2N2907 is basically a PNP bipolar junction transistor (BJT) which is mainly designed for switching and low power general purpose amplification applications. It has an ability to operate at high speed and moderate temperature.

This blog covers 2N2907 Transistor pinout, datasheet, equivalent, features, and other information.

PNP Not Gate using 2N2907 Bipolar Junction Transistor BJT BJTS for Beginner

Catalog

2N2907 CAD Model

2N2907 Pinout

2N2907 Circuit

2N2907 Applications

2N2907 Features

2N2907 Advantage

2N2907 Package

2N2907 Parameters

2N2907 Manufacturer

2N2907 Documents

2N2907 Environmental and Export Classifications

2N2907 Complementary NPN Transistor

2N2907 Equivalents

2N2907 as Amplifier

2N2907 as Switch

2N2907 Popularity by Region

2N2907 Market Price Analysis

Component Datasheet


2N2907 CAD Model

2N2907 Symbol

2N2907 Symbol

2N2907 Footprint

2N2907 Footprint


2N2907 Pinout

2N907 Transistor IC Pinout

Pin No. Pin Name Description
1 Emitter Current Drains out through emitter
2 Base Controls the biasing of transistor
3 Collector Current flows in through collector

2N2907 Circuit

  • Storage and Fall Time Test Circuit

2N2907 Circuit: Storage and Fall Time Test Circuit

 

  • Delay and Rise Time Test Circuit

2N2907 Circuit: Delay and Rise Time Test Circuit


2N2907 Applications

  • Darlington Pair
  • Making siren or dual Led or Lamp flasher
  • Various switching applications
  • Low power amplifications

2N2907 Features

  • Type of packages – TO-92
  • These are Lead (Pb) free devices
  • Having a high value of current (maximum. 600 mA)
  • Low voltage value (maximum. 40 V)
  • Maximum Collector to Emitter voltage (VCEO) is(40v maximum.)
  • Collector- to- Base voltage (VCBO) is 60volt
  • Emitter- to- Base voltage(VEBO) is 5volt (normally)
  • Max value of Collector current is 600mA
  • Power dissipation at ambient temperature is about 400mW
  • Having DC current gain (hfe) of 100 – 300 (maximum)
  • Temperature of operation & storage is -65 to +150 °C

2N2907 Advantage

2N907 Transistor IC2N907 Transistor IC

  • In 2N2907 transistors, N layers is composed of semiconductor material which exists between the two layers of P type material.
  • N side represent the base side and polarity will be negative at the base side.
  • P side represents the emitter terminal and polarity at the emitter side will be positive.
  • In order to conduct, base must be negative with respect to emitter.
  • And collector-base junction will always be reverse biased so polarity must be reversed at the collector side. Collector is more negative with respect to base terminal.
  • This transistor is a bipolar device, so conduction will be carried out by both charge carriers i.e. holes and electrons but majority charge carriers will be holes in this case.
  • PNP and NPN transistors work in a similar fashion with some exceptions i.e. voltage polarities and current directions will be reserved in case of PNP transistors as compared to NPN transistors.
  • Base is negative is PNP transistor while it is positive in case of NPN transistors.
  • These transistors are termed as current controlled device because small current at the base side is used to control large current at the collector and emitter side.
  • When we apply voltage at the base side it gets biased, and it allows the electrons to flow from emitter to collector.
  • In case of PNP transistor, current will flow from emitter to collector but majority charge carriers will be holes which are then collected by the collector.

2N2907 Package

2N907 Transistor Package

2N907 Transistor Package


2N2907 Parameters

Category

Discrete Semiconductor Products

Transistors - Bipolar (BJT) - Single

Mfr ON Semiconductor
Series -
Package
Bulk
Part Status Obsolete
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Frequency - Transition -
Operating Temperature -
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Current - Collector (Ic) (Max)
600mA
Voltage - Collector Emitter Breakdown (Max) 40V
Power - Max 400mW
Base Product Number 2N2907

2N2907 Manufacturer

2N907 Manufacturer: On Semiconductor

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.


2N2907 Documents

Resource Type Link
CAD Model 2N2907 by SnapEDA
HTML Datasheet 2N/FTSO/PN NPN Type (10p)

2N2907 Environmental and Export Classifications

RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

2N2907 Complementary NPN Transistor

The complementary NPN transistor to the 2N2907 is the 2N2222.


2N2907 Equivalents

You can replace the 2N2907 with the 2N2907A or NTE159M.


2N2907 as Amplifier

When use 2N2907 as a amplifier, can be operated in the active region.

When its base is connected to ground it will allow high current (600mA) to pass through collector to emitter, that’s how it amplifies the current. There are three configuration used in an amplifier circuit are common emitter, common base, common collector. This transistor is used where low power amplification is needed. It can also amplifies the power and current. Amplification factor usually determined in term of power, for calculating the current gain we use the formula:

Gain (hfe) = IC / IB

Where, IC is the collector current and IB is the base current of the circuit.


2N2907 as Switch

When use 2N2907 as a switch, can be operated in saturation region and cut-off region.

In PNP transistor, by default it’s in ON state, but not to be said perfectly on until the base pin is not grounded. If we provide ground to the base pin then the transistor will be in reverse biased and said to be turn ON. If supply is provided to the base pin it stops conducting current between emitter and collector and said to be in OFF state. For the protection of transistor a resistance added in series with it. For finding the value of that resistor you can use the formula:

RB = VBE / IB

Where, the value of VBE will be 5v for this transistor. The maximum value of providing base current is 200mA. So, from that you can find the value of resistance to be added in series with it.


2N2907 Popularity by Region

2N2907 Popularity by Region


2N2907 Market Price Analysis

2N2907 Market Price Analysis


Component Datasheet

2N2907 Datasheet

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