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K4T1G164QF-BCE7 Datasheets| SAMSUNG| PDF| Price| In Stock

Author: Apogeeweb
Date: 13 Apr 2020
 1454
SAMSUNG Memory

Product Overview

Kynix Part #:

KY32-K4T1G164QF-BCE7

Manufacturer Part#:

K4T1G164QF-BCE7

Product Category:

IC Chips

Stock:

Yes

Manufacturer:

SAMSUNG

Click Purchase button to buy original genuine K4T1G164QF-BCE7

Purchase

Description:

-

Datasheet:

K4T1G164QF-BCE7 Datasheet

Package:

FBGA

Quantity:

25800 PCS


K4T1G164QF-BCE7 Images are for reference only.

 K4T1G164QF-BCE7 Image


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Unknown

Status

Obsolete

Package Description

FBGA, BGA84,9X15,32

Brand

SAMSUNG

Sub Category

DRAMs

Access Time-Max

0.4 ns

Clock Frequency-Max (fCLK)

400 MHz

I/O Type

COMMON

Interleaved Burst Length

4,8

JESD-30 Code

R-PBGA-B84

Memory Density

1073741824 bit

Memory IC Type

DDR DRAM

Memory Width

16

Moisture Sensitivity Level

3

Number of Terminals

84

Number of Words

67108864 words

Number of Words Code

64000000

Organization

64MX16

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

FBGA

Package Equivalence Code

BGA84,9X15,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (Cel)

-

Power Supplies

1.8 V

Qualification Status

Not Qualified

Risk Rank

5.8

Refresh Cycles

8192

Rohs Code

Yes

Sequential Burst Length

4,8

Standby Current-Max

0.01 A

Supply Current-Max

0.18 mA

Supply Voltage-Nom (Vsup)

1.8 V

Surface Mount

Yes

Technology

CMOS

Type

NAND TYPE

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Features

  • JEDEC standard VDD = 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
  • 8 Banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5, 6
  • Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is anoptional feature)
  • Off-Chip Driver(OCD) Impedance Adjustment
  • On Die Termination
  • Special Function Support

       - 50ohm ODT

       - High Temperature Self-Refresh rate enable

  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at85°C < TCASE < 95 °C
  • All of products are Lead-Free, Halogen-Free, and RoHS compliant

Advantages and Disadvantages

Advantages 

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. For example, 1Gb(x8) device receive 14/10/3 addressing.

The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ.

The 1Gb DDR2 device is available in 60ball FBGA(x4/x8) and in 84ball FBGA(x16).


Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

There is no relevant information available for this part yet.


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

25800 PCS

Samsung Semiconductor

-

Vyrian

886 PCS

Samsung Semiconductor

-

Nexxon

In Stock

Samsung Semiconductor

-

C Plus Electronics

1915 PCS

Samsung Semiconductor

-


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

K4T1G164QF-BCE7 Popularity by Region 

K4T1G164QF-BCE7 Popularity by Region


Market Price Analysis

K4T1G164QF-BCE7 Market Price Analysis 

K4T1G164QF-BCE7 Market Price Analysis

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