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K9F1G08R0B-JIB0 Datasheets| SAMSUNG| PDF| Price| In Stock

Author: Apogeeweb
Date: 9 Apr 2020
 1503
SAMSUNG Memory

Product Overview

Kynix Part #:

KY32-K9F1G08R0B-JIB0

Manufacturer Part#:

K9F1G08R0B-JIB0

Product Category:

IC Chips

Stock:

Yes

Manufacturer:

SAMSUNG

Click Purchase button to buy original genuine K9F1G08R0B-JIB0

Purchase

Description:

-

Datasheet:

K9F1G08R0B-JIB0 Datasheet

Package:

BGA

Quantity:

20200 PCS


K9F1G08R0B-JIB0 Images are for reference only.

 K9F1G08R0B-JIB0 Image


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

REACH Compliant

Unknown

Status

Obsolete

Package Description

11 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63

Brand

SAMSUNG

Sub Category

Flash Memories

I/O Type

COMMON

JESD-30 Code

R-PBGA-B63

Memory Density

1073741824 bit

Memory IC Type

FLASH

Memory Width

8

Number of Terminals

63

Number of Words

134217728 words

Number of Words Code

128000000

Number of Functions

1

Organization

128MX8

Operating Mode

SYNCHRONOUS

Operating Temperature

-40°C~85°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

VFBGA

Parallel/Serial

SERIAL

Package Shape

RECTANGULAR

Package Style

GRID ARRAY

Programming Voltage

1.8 V

Peak Reflow Temperature (Cel)

-

Power Supplies

-

Qualification Status

Not Qualified

Risk Rank

5.78

Seated Height-Max

1.0 mm

Supply Voltage-Nom (Vsup)

1.8 V

Supply Voltage-Min (Vsup)

1.65 V

Supply Voltage-Max (Vsup)

1.95 V

Surface Mount

Yes

Technology

CMOS

Type

NAND TYPE

Temperature Grade

INDUSTRIAL

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Length

11.0 mm

Width

9.0 mm


Features

  • Voltage Supply

       - 1.8V Device(K9F1G08R0B) : 1.65V ~ 1.95V

  • Organization

       - Memory Cell Array : (128M + 4M) x 8bit

       - Data Register : (2K + 64) x 8bit

  • Automatic Program and Erase

       - Page Program : (2K + 64)Byte

       - Block Erase : (128K + 4K)Byte

  • Page Read Operation

       - Page Size : (2K + 64)Byte

       - Random Read : 25µs(Max.)

       - Serial Access : 42ns((Min.)

  • Fast Write Cycle Time

       - Page Program time : 200µs(Typ.)

       - Block Erase Time : 1.5ms(Typ.)

  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection

       - Program/Erase Lockout During Power Transitions

  • Reliable CMOS Floating-Gate Technology

       -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)

       - Data Retention : 10 Years

  • Command Driven Operation
  • Unique ID for Copyright Protection
  • Package :

       - K9F1G08R0B-JCB0/JIB0 : Pb-FREE PACKAGE 63 - Ball FBGA I (9 x 11 / 0.8 mm pitch)


Advantages and Disadvantages

Advantages

Offered in 128Mx8bit, the K9F1G08R0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 42ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08R0B extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08R0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. 


Applications

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Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

Description

Value

ECCN

3A991.B.1.A

HTSN

8542.32.00.51


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

RoHS Status

Unconfirmed


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

11400 PCS

Samsung Semiconductor

-

Vyrian

650 PCS

Samsung Semiconductor

-

New Strength Electronic

1260 PCS

Samsung Semiconductor

DC:09+ ; BGA

Depu Electronics

15000 PCS

Samsung Semiconductor

2019+_NA_new and original


Alternative Models

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Popularity by Region

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Market Price Analysis

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