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K4T1G084QE-HCE6 Datasheets| SAMSUNG| PDF| Price| In Stock

Author: Apogeeweb
Date: 18 Mar 2020
 1270
SAMSUNG Memory

Product Overview

Kynix Part #:

KY32-K4T1G084QE-HCE6

Manufacturer Part#:

K4T1G084QE-HCE6

Product Category:

IC Chips

Stock:

Yes

Manufacturer:

SAMSUNG

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Purchase

Description:

-

Datasheet:

K4T1G084QE-HCE6 Datasheet

Package:

BGA

Quantity:

13000 PCS


K4T1G084QE-HCE6 Images are for reference only.

K4T1G084QE-HCE6 Image K4T1G084QE-HCE6 Image


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Unknown

Status

Obsolete

Package Description

TFBGA, BGA60,9X11,32

Brand

SAMSUNG

Sub Category

DRAMs

Access Mode

MULTI BANK PAGE BURST

Access Time-Max

0.45 ns

Clock Frequency-Max (fCLK)

333 MHz

I/O Type

COMMON

Interleaved Burst Length

4,8

JESD-30 Code

R-PBGA-B60

Memory Density

1073741824 bit

Memory IC Type

DDR DRAM

Memory Width

8

Moisture Sensitivity Level

3

Number of Terminals

60

Number of Words

134217728 words

Number of Words Code

128000000

Number of Functions

1

Number of Ports

1

Organization

128MX8

Operating Mode

SYNCHRONOUS

Operating Temperature

0°C~85°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

TFBGA

Package Equivalence Code

BGA60,9X11,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, THIN PROFILE, FINE PITCH

Pbfree Code

Yes

Peak Reflow Temperature (Cel)

260

Power Supplies

1.8 V

Qualification Status

Not Qualified

Risk Rank

5.32

Refresh Cycles

8192

Rohs Code

Yes

Sequential Burst Length

4,8

Supply Current-Max

0.155 mA

Supply Voltage-Max (Vsup)

1.9 V

Supply Voltage-Nom (Vsup)

1.8 V

Supply Voltage-Min (Vsup)

1.7 V

Seated Height-Max

1.2 mm

Surface Mount

Yes

Technology

CMOS

Type

NAND TYPE

Temperature Grade

OTHER

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Length

9.5 mm

Width

7.5 mm

Additional Feature

AUTO/SELF REFRESH


Features

There is no relevant information available for this part yet.


Advantages and Disadvantages

There is no relevant information available for this part yet.


Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

There is no relevant information available for this part yet.


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / Unconfirmed


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

11400 PCS

Samsung Semiconductor

-

Vyrian

636 PCS

Samsung Semiconductor

-

Nexxon

In Stock

Samsung Semiconductor

-

Classic Components

110 PCS

Samsung Semiconductor

-


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

There is no relevant information available for this part yet.


Market Price Analysis

There is no relevant information available for this part yet.


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