Product Overview
Kynix Part #:
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KY32-K4B1G1646G-BCH9
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Manufacturer Part#:
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K4B1G1646G-BCH9
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Product Category:
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IC Chips
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Stock:
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Yes
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Manufacturer:
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SAMSUNG
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Click Purchase button to buy original genuine K4B1G1646G-BCH9
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Description:
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-
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Datasheet:
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K4B1G1646G-BCH9 Datasheet
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Package:
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BGA
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Quantity:
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11400 PCS
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K4B1G1646G-BCH9 Images are for reference only.
CAD Models
There is no relevant information available for this part yet.
Product Attributes
Categories
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Integrated Circuits (ICs)
Memory ICs
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EU RoHS Compliant
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Yes
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REACH Compliant
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Yes
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Status
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Obsolete
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Package Description
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DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin FBGA
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Brand
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SAMSUNG
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Sub Category
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DRAMs
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Address Bus Width
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13 Bit
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Access Time-Max
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0.255 ns
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Clock Frequency-Max (fCLK)
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667 MHz
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Data Bus Width
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16 Bit
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I/O Type
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COMMON
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Interleaved Burst Length
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4,8
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Interface Type
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SSTL_1.5
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JESD-30 Code
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R-PBGA-B96
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JESD-609 Code
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e1
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Memory Density
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1.073741824E9 bit
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Memory IC Type
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DDR DRAM
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Memory Width
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16
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Moisture Sensitivity Level
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3
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Maximum Clock Rate
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1333 MHz
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Maximum Operating Current
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170 mA
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Min Supply Voltage
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1.425 V
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Number of Terminals
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96
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Number of Words
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6.7108864E7 words
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Number of Words Code
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64M
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Number of Internal Banks
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8
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Number of Words per Bank
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8M
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Number of Bits per Word
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16 Bit
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Number of I/O Lines
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16 Bit
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Nominal Supply Current
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120 mA
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Organization
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64MX16
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Operating Temperature
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0°C~95°C
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Output Characteristics
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3-STATE
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Package Body Material
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PLASTIC/EPOXY
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Package Code
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FBGA
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Package Equivalence Code
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BGA96,9X16,32
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Package Shape
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RECTANGULAR
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Package Style
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GRID ARRAY, FINE PITCH
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Pin Count
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96
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Product Dimensions
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13.3 x 7.5 x 0.73
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Peak Reflow Temperature (Cel)
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225
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Power Supplies
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1.5 V
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Qualification Status
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Not Qualified
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Risk Rank
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N/A
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Refresh Cycles
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8192
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Rohs Code
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Yes
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Sequential Burst Length
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4,8
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Standby Current-Max
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0.01 Amp
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Supply Current-Max
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0.17 Amp
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Supply Voltage-Nom (Vsup)
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1.5 V
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Screening Level
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COMMERCIAL
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Surface Mount
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Yes
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Technology
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CMOS
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Type
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DDR3 SDRAM
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Terminal Finish
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Tin/Silver/Copper (Sn/Ag/Cu)
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Terminal Form
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BALL
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Terminal Pitch
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0.8 mm
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Terminal Position
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BOTTOM
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Length
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13.3 mm
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Width
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7.5 mm
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Features
- JEDEC standard 1.5V ± 0.075V Power Supply
- Vddq = 1.5V ± 0.075V
- 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin
- 8 Banks
- Programmable CAS Latency (posted CAS) : 7,9,11,13,14
- Programmable Additive Latency: 0, CL-2 or CL-1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write
- Bi-directional Differential Data-Strobe
- Internal (self) calibration: Internal self-calibration through ZQ pin (RZQ: 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than Tcase 85°C, 3.9us at 85°C < Tcase ≤ 95°C
- Asynchronous Reset
- Package: 96 balls FBGA - x16
- All of Lead-Free products are compliant for RoHS
- All of products are Halogen-free
Advantages and Disadvantages
Advantages
The 1Gb DDR3 SDRAM G-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK\ falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS\) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS\/CAS\ multiplexing style. The DDR3 device operates with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V Vddq. The 1Gb DDR3 G-die device is available in 96ball FBGA (x16).
Applications
There is no relevant information available for this part yet.
Product Functions
There is no relevant information available for this part yet.
ECCN / UNSPSC
Description
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Value
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ECCN
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EAR99
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HTSN
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8542320036
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SCHEDULE B
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8542320023
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Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
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3 (168 Hours)
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Lead Free Status / RoHS Status
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Lead free / RoHS Compliant
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Documents & Media
There is no relevant information available for this part yet.
Product Manufacturer
Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.
Product Range
Dynamic random Access Memory
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Solid State Disk
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Embedded Memory
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Multiple Layer Packaging Chip
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Processor
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Image Sensor
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Device Security Solutions
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Display Integrated Circuit
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Power Integrated Circuit
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Distributors
Distributor
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Stock
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Manufacturer
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Descriptions
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Kynix
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11400 PCS
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Samsung Semiconductor
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-
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Classic Components
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8162 PCS
|
Samsung Semiconductor
|
-
|
Quest Components
|
848 PCS
|
Samsung Semiconductor
|
DDR DRAM, 64MX16, 0.255NS, CMOS, PBGA96
|
C Plus Electronics
|
1072 PCS
|
Samsung Semiconductor
|
-
|
Alternative Models
There is no relevant information available for this part yet.
Popularity by Region
K4B1G1646G-BCH9 Popularity by Region
Market Price Analysis
K4B1G1646G-BCH9 Market Price Analysis
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