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K4B1G1646G-BCH9 Datasheets| SAMSUNG| PDF| Price| In Stock

Author: Apogeeweb
Date: 18 Mar 2020
 2391
SAMSUNG Memory

Product Overview

Kynix Part #:

KY32-K4B1G1646G-BCH9

Manufacturer Part#:

K4B1G1646G-BCH9

Product Category:

IC Chips

Stock:

Yes

Manufacturer:

SAMSUNG

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Description:

-

Datasheet:

K4B1G1646G-BCH9 Datasheet

Package:

BGA

Quantity:

11400 PCS


K4B1G1646G-BCH9 Images are for reference only.

 K4B1G1646G-BCH9 Image


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Yes

Status

Obsolete

Package Description

DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin FBGA

Brand

SAMSUNG

Sub Category

DRAMs

Address Bus Width

13 Bit

Access Time-Max

0.255 ns

Clock Frequency-Max (fCLK)

667 MHz

Data Bus Width

16 Bit

I/O Type

COMMON

Interleaved Burst Length

4,8

Interface Type

SSTL_1.5

JESD-30 Code

R-PBGA-B96

JESD-609 Code

e1

Memory Density

1.073741824E9 bit

Memory IC Type

DDR DRAM

Memory Width

16

Moisture Sensitivity Level

3

Maximum Clock Rate

1333 MHz

Maximum Operating Current

170 mA

Min Supply Voltage

1.425 V

Number of Terminals

96

Number of Words

6.7108864E7 words

Number of Words Code

64M

Number of Internal Banks

8

Number of Words per Bank

8M

Number of Bits per Word

16 Bit

Number of I/O Lines

16 Bit

Nominal Supply Current

120 mA

Organization

64MX16

Operating Temperature

0°C~95°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

FBGA

Package Equivalence Code

BGA96,9X16,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, FINE PITCH

Pin Count

96

Product Dimensions

13.3 x 7.5 x 0.73

Peak Reflow Temperature (Cel)

225

Power Supplies

1.5 V

Qualification Status

Not Qualified

Risk Rank

N/A

Refresh Cycles

8192

Rohs Code

Yes

Sequential Burst Length

4,8

Standby Current-Max

0.01 Amp

Supply Current-Max

0.17 Amp

Supply Voltage-Nom (Vsup)

1.5 V

Screening Level

COMMERCIAL

Surface Mount

Yes

Technology

CMOS

Type

DDR3 SDRAM

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Length

13.3 mm

Width

7.5 mm


Features

  • JEDEC standard 1.5V ± 0.075V Power Supply
  • Vddq = 1.5V ± 0.075V
  • 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin
  • 8 Banks
  • Programmable CAS Latency (posted CAS) : 7,9,11,13,14
  • Programmable Additive Latency: 0, CL-2 or CL-1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write
  • Bi-directional Differential Data-Strobe
  • Internal (self) calibration: Internal self-calibration through ZQ pin (RZQ: 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than Tcase 85°C, 3.9us at 85°C < Tcase ≤ 95°C
  • Asynchronous Reset
  • Package: 96 balls FBGA - x16
  • All of Lead-Free products are compliant for RoHS
  • All of products are Halogen-free

Advantages and Disadvantages

Advantages

The 1Gb DDR3 SDRAM G-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK\ falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS\) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS\/CAS\ multiplexing style. The DDR3 device operates with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V Vddq. The 1Gb DDR3 G-die device is available in 96ball FBGA (x16).


Applications

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Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

Description

Value

ECCN

EAR99

HTSN

8542320036

SCHEDULE B

8542320023


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

11400 PCS

Samsung Semiconductor

-

Classic Components

8162 PCS

Samsung Semiconductor

-

Quest Components

848 PCS

Samsung Semiconductor

DDR DRAM, 64MX16, 0.255NS, CMOS, PBGA96

C Plus Electronics

1072 PCS

Samsung Semiconductor

-


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

K4B1G1646G-BCH9 Popularity by Region 

K4B1G1646G-BCH9 Popularity by Region


Market Price Analysis

 K4B1G1646G-BCH9 Market Price Analysis

K4B1G1646G-BCH9 Market Price Analysis


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