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K4T1G164QE-HCF7 Datasheets| SAMSUNG| PDF| Price| In Stock

Author: Apogeeweb
Date: 16 Mar 2020
 1475
SAMSUNG Memory

Product Overview

Kynix Part #:

KY32-K4T1G164QE-HCF7

Manufacturer Part#:

K4T1G164QE-HCF7

Product Category:

Memory

Stock:

Yes

Manufacturer:

SAMSUNG

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Purchase 

Description:

-

Datasheet:

K4T1G164QE-HCF7 Datasheet

Package:

BGA

Quantity:

10200 PCS


K4T1G164QE-HCF7 Images are for reference only.

K4T1G164QE-HCF7 Image 


CAD Models

K4T1G164QQ-HCE6 Symbol 

K4T1G164QQ-HCE6 Symbol

K4T1G164QQ-HCE6 Footprint 

K4T1G164QQ-HCE6 Footprint


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Unknown

Status

Obsolete

Package Description

HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

Brand

SAMSUNG

Sub Category

DRAMs

Access Mode

MULTI BANK PAGE BURST

Access Time-Max

0.4 ns

Clock Frequency-Max (fCLK)

400 MHz

I/O Type

COMMON

Interleaved Burst Length

4,8

JESD-30 Code

R-PBGA-B84

JESD-609 Code

e1

Memory Density

1073741824 bit

Memory IC Type

DDR DRAM

Memory Width

16

Moisture Sensitivity Level

3

Number of Terminals

84

Number of Words

67108864 words

Number of Words Code

64000000

Number of Functions

1

Number of Ports

1

Organization

64MX16

Operating Mode

SYNCHRONOUS

Operating Temperature

0°C~85°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

TFBGA

Package Equivalence Code

BGA84,9X15,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, THIN PROFILE, FINE PITCH

Pbfree Code

Yes

Peak Reflow Temperature (Cel)

260

Power Supplies

1.8 V

Qualification Status

Not Qualified

Risk Rank

5.81

Refresh Cycles

8192

Rohs Code

Yes

Sequential Burst Length

4,8

Standby Current-Max

0.01 A

Supply Current-Max

0.2 mA

Supply Voltage-Nom (Vsup)

1.8 V

Supply Voltage-Min (Vsup)

1.7 V

Supply Voltage-Max (Vsup)

1.9 V

Seated Height-Max

1.2 mm

Surface Mount

Yes

Technology

CMOS

Type

NAND TYPE

Temperature Grade

OTHER

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Length

12.5 mm

Width

7.5 mm

Additional Feature

AUTO/SELF REFRESH


Features

There is no relevant information available for this part yet.


Advantages and Disadvantages

There is no relevant information available for this part yet.


Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

There is no relevant information available for this part yet.


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / Non-Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

5362 PCS

Samsung Semiconductor

-

Vyrian

497 PCS

Samsung Semiconductor

-

Classic Components

100 PCS

Samsung Semiconductor

-

C Plus Electronics

318 PCS

Samsung Semiconductor

-


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

K4T1G164QE-HCF7 Popularity by Region 

K4T1G164QE-HCF7 Popularity by Region


Market Price Analysis

There is no relevant information available for this part yet.


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