Product Overview
Kynix Part #: | KY32-K4T1G084QQ-HCF7 |
Manufacturer Part#: | K4T1G084QQ-HCF7 |
Product Category: | Memory |
Stock: | Yes |
Manufacturer: | SAMSUNG |
Click Purchase button to buy original genuine K4T1G084QQ-HCF7 | |
Description: | - |
Datasheet: | K4T1G084QQ-HCF7 Datasheet |
Package: | BGA |
Quantity: | 10200 PCS |
K4T1G084QQ-HCF7 Images are for reference only.
CAD Models
There is no relevant information available for this part yet.
Product Attributes
Categories | Integrated Circuits (ICs) Memory ICs |
EU RoHS Compliant | Yes |
REACH Compliant | Unknown |
Status | Obsolete |
Brand | SAMSUNG |
Sub Category | DRAMs |
Access Time-Max | 0.4 ns |
Clock Frequency-Max (fCLK) | 400 MHz |
I/O Type | COMMON |
Interleaved Burst Length | 4,8 |
JESD-30 Code | R-PBGA-B60 |
JESD-609 Code | e1 |
Memory Density | 1073741824 bit |
Memory IC Type | DDR DRAM |
Memory Width | 8 |
Moisture Sensitivity Level | 3 |
Number of Terminals | 60 |
Number of Words | 134217728 words |
Number of Words Code | 128000000 |
Organization | 128MX8 |
Operating Temperature | 0°C~65°C |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | FBGA |
Package Equivalence Code | BGA60,9X11,32 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, FINE PITCH |
Power Supplies | 1.8 V |
Qualification Status | Not Qualified |
Risk Rank | 5.83 |
Refresh Cycles | 8192 |
Rohs Code | Yes |
Sequential Burst Length | 4,8 |
Supply Current-Max | 0.25 mA |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | Yes |
Technology | CMOS |
Toggle Bit |
|
Type | NAND TYPE |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Features
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- PASR(Partial Array Self Refresh)
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• All of Lead-free products are compliant for RoHS
Advantages and Disadvantages
Advantages
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 1Gb(x8) device receive 14/
10/3 addressing. The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power
supply and 1.8V ± 0.1V VDDQ.
The 1Gb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball FBGAs(x16).
Applications
There is no relevant information available for this part yet.
Product Functions
There is no relevant information available for this part yet.
ECCN / UNSPSC
There is no relevant information available for this part yet.
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Lead Free Status / RoHS Status | Lead free / Non-Compliant |
Documents & Media
There is no relevant information available for this part yet.
Product Manufacturer
Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.
Product Range
Dynamic random Access Memory | Solid State Disk | Embedded Memory |
Multiple Layer Packaging Chip | Processor | Image Sensor |
Device Security Solutions | Display Integrated Circuit | Power Integrated Circuit |
Distributors
Distributor | Stock | Manufacturer | Descriptions |
Kynix | 10200 PCS | Samsung Semiconductor | - |
Sierra IC | 1191 PCS | Samsung Semiconductor | - |
Classic Components | 338 PCS | Samsung Semiconductor | - |
Depu Electronics | 15000 PCS | Samsung Semiconductor | - |
Alternative Models
There is no relevant information available for this part yet.
Popularity by Region
There is no relevant information available for this part yet.
Market Price Analysis
There is no relevant information available for this part yet.
You May Also Be Interested In
Best Sales of diode
Photo |
Part |
Company |
Description |
Pricing (USD) |
|
Alternative Models
Part |
Compare |
Manufacturers |
Category |
Description |
|
Ordering & Quality
Image |
Mfr. Part # |
Company |
Description |
Package |
PDF |
Qty |
Pricing (USD) |
|