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K4T1G084QQ-HCF7 Datasheets| SAMSUNG| PDF| Price| In Stock

Author: Apogeeweb
Date: 16 Mar 2020
 1644
SAMSUNG Memory

Product Overview

Kynix Part #:

KY32-K4T1G084QQ-HCF7

Manufacturer Part#:

K4T1G084QQ-HCF7

Product Category:

Memory

Stock:

Yes

Manufacturer:

SAMSUNG

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Purchase 

Description:

-

Datasheet:

K4T1G084QQ-HCF7 Datasheet

Package:

BGA

Quantity:

10200 PCS


K4T1G084QQ-HCF7 Images are for reference only.

K4T1G084QQ-HCF7 Image 


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Unknown

Status

Obsolete

Brand

SAMSUNG

Sub Category

DRAMs

Access Time-Max

0.4 ns

Clock Frequency-Max (fCLK)

400 MHz

I/O Type

COMMON

Interleaved Burst Length

4,8

JESD-30 Code

R-PBGA-B60

JESD-609 Code

e1

Memory Density

1073741824 bit

Memory IC Type

DDR DRAM

Memory Width

8

Moisture Sensitivity Level

3

Number of Terminals

60

Number of Words

134217728 words

Number of Words Code

128000000

Organization

128MX8

Operating Temperature

0°C~65°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

FBGA

Package Equivalence Code

BGA60,9X11,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, FINE PITCH

Power Supplies

1.8 V

Qualification Status

Not Qualified

Risk Rank

5.83

Refresh Cycles

8192

Rohs Code

Yes

Sequential Burst Length

4,8

Supply Current-Max

0.25 mA

Supply Voltage-Nom (Vsup)

1.8 V

Surface Mount

Yes

Technology

CMOS

Toggle Bit


Type

NAND TYPE

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED


Features

• JEDEC standard 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5, 6

• Programmable Additive Latency: 0, 1, 2, 3, 4, 5

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination

• Special Function Support

- PASR(Partial Array Self Refresh)

- 50ohm ODT

- High Temperature Self-Refresh rate enable

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

• All of Lead-free products are compliant for RoHS


Advantages and Disadvantages

Advantages

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 1Gb(x8) device receive 14/

10/3 addressing. The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power

supply and 1.8V ± 0.1V VDDQ.

The 1Gb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball FBGAs(x16).


Applications

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Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

There is no relevant information available for this part yet.


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / Non-Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

10200 PCS

Samsung Semiconductor

-

Sierra IC

1191 PCS

Samsung Semiconductor

-

Classic Components

338 PCS

Samsung Semiconductor

-

Depu Electronics

15000 PCS

Samsung Semiconductor

-


Alternative Models

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Popularity by Region

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Market Price Analysis

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