Product Overview
Kynix Part #: | KY32-K4T51043QB-GCD5 |
Manufacturer Part#: | K4T51043QB-GCD5 |
Product Category: | Memory |
Stock: | Yes |
Manufacturer: | SAMSUNG |
Click Purchase button to buy original genuine K4T51043QB-GCD5 | |
Description: | - |
Datasheet: | K4T51043QB-GCD5 Datasheet |
Package: | BGA |
Quantity: | 2200 PCS |
K4T51043QB-GCD5 Images are for reference only.
CAD Models
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Product Attributes
Categories | Integrated Circuits (ICs) Memory ICs |
REACH Compliant | Yes |
Status | Obsolete |
Package Description | - |
Brand | SAMSUNG |
Sub Category | DRAMs |
Access Time-Max | 0.5 ns |
Clock Frequency-Max (fCLK) | 267 MHz |
I/O Type | COMMON |
Interleaved Burst Length | 4,8 |
JESD-30 Code | R-PBGA-B60 |
JESD-609 Code | e0 |
Memory Density | 5.36870912E8 bit |
Memory IC Type | DDR DRAM |
Memory Width | 4 |
Number of Terminals | 60 |
Number of Words | 1.34217728E8 words |
Number of Words Code | 128M |
Organization | 128MX4 |
Operating Temperature | 0°C~95°C |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | FBGA |
Package Equivalence Code | BGA60,9X11,32 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, FINE PITCH |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies | 1.8 V |
Qualification Status | Not Qualified |
Risk Rank | - |
Refresh Cycles | 8192 |
Rohs Code | - |
Sequential Burst Length | 4,8 |
Standby Current-Max | 0.008 Amp |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | Yes |
Technology | CMOS |
Type | NAND TYPE |
Temperature Grade | OTHER |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Features
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
• 4 Banks
• Posted
• Programmable Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
-High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• Package: 60ball FBGA - 128Mx4/64Mx8 , 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
Advantages and Disadvantages
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Applications
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Product Functions
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ECCN / UNSPSC
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Environmental & Export Classifications
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Lead Free Status / RoHS Status | Contains lead / RoHS Compliant |
Documents & Media
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Product Manufacturer
Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.
Product Range
Dynamic random Access Memory | Solid State Disk | Embedded Memory |
Multiple Layer Packaging Chip | Processor | Image Sensor |
Device Security Solutions | Display Integrated Circuit | Power Integrated Circuit |
Distributors
Distributor | Stock | Manufacturer | Descriptions |
Kynix | 2200 PCS | Samsung Semiconductor | - |
Quest Components | 65 PCS | Samsung Semiconductor | SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA |
Sierra IC | 82 PCS | Samsung Semiconductor | - |
Vyrian | 1912 PCS | Samsung Semiconductor | - |
Alternative Models
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Popularity by Region
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Market Price Analysis
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