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Apr 12 2018

H5TC4G63CFR-RDA Price | H5TC4G63CFR-RDA-Description | SK HYNIX | In Stock

Product Overview

Kynix Part #:KY32-H5TC4G63CFR-RDA
Manufacturer Part#:H5TC4G63CFR-RDA
Click Purchase button to Buy Original Genuine H5TC4G63CFR-RDA:Purchase
Product Category:Memory
Manufacturer:SK HYNIX
Description:DRAM Chip
H5TC4G63CFR-RDA Datasheet:H5TC4G63CFR-RDA Datasheet
Package:BGA
Quantity:1800 PCS
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL):3(168 Hours)
Mfr Package Description:FBGA-96
REACH Compliant:Yes
EU RoHS Compliant:Yes
China RoHS Compliant:Yes
Status:Active
Access Mode:MULTI BANK PAGE BURST
JESD-30 Code:R-PBGA-B96
Memory Density:4.294967296E9  bit
Memory IC Type:DRAM MODULE
Memory Width:16
Number of Functions:1
Number of Ports:1
Number of Terminals:96
Number of Words:2.68435456E8  words
Number of Words Code:256M
Operating Mode:SYNCHRONOUS
Operating Temperature-Min:0.0  Cel
Operating Temperature-Max:85.0  Cel
Organization:256MX16
Package Body Material:PLASTIC/EPOXY
Package Code:TFBGA
Package Shape:RECTANGULAR
Package Style:GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel):260
Seated Height-Max:1.2  mm
Supply Voltage-Nom (Vsup):1.35  V
Supply Voltage-Min (Vsup):1.283  V
Supply Voltage-Max (Vsup):1.45  V
Surface Mount:YES
Technology:CMOS
Temperature Grade:OTHER
Length:13.0  mm
Width:7.5  mm
Additional Feature:AUTO/SELF REFRESH
Delivery Time:with in a week

Purchase Perform Introduction

Stock: 1,800 Can Ship Immediately

kynix: Kynix Semiconductor Limited is one of the largest electronic component distributor in China.

Building time: 2008

Goal: Strive to be the leading of this industry and become the  first in the world. 

Advantage: Professional workshop and rigorous management system,

Idea: adhere to honesty and ethics as business philosophy

Product Manufacturer

SK hynix Inc. is a South Korean memory semiconductor supplier of dynamic random-access memory (DRAM) chips and flash memory chips. Hynix is the world's second-largest memory chipmaker (after Samsung Electronics)and the world's fifth-largest semiconductor company.As of February, 2012, SK Hynix became a new family member of SK group. Now it is time for SK Hynix to open a new IT world together with SK which has led the nation strong in information technology. SK Hynix as one of the representative of Korea’s semiconductor company will make warm IT world for the mutual happiness.Semiconductors are essential to all IT products, and its performance often determines the performance of the final products. SK Hynix is the global leader in producing semiconductor, such as DRAM and NAND flash and System IC including CMOS Image Sensors. Since pilot production of Korea’s first 16Kb SRAM in 1984, SK Hynix consistently led the industry with smaller, faster and lower power semiconductor. As the second largest manufacturer of memory semiconductor, and as the largest DRAM provider in emerging markets such as China, SK Hynix is at the forefront of the IT industry.

SK Hynix’s principal products include dynamic random-access memory (DRAM) for PCs, laptops and servers, low-power mobile DRAMs, high-speed graphic DRAMs for graphic data processing and consumer DRAMs for the full spectrum of digital devices. Our products support wide array of interfaces, including DDR, DDR2, DDR3 and DDR4 interfaces, to meet our customer needs.

SK hynix strives to meet all of our customers’ needs through innovative R&D and leading edge technology, we are particularly focused on high-capacity, high-performance, low-power premium products to drive our future growth.

Product Description

DRAM Chip DDR3L SDRAM 4G-Bit 256Mx16 1.35V/1.5V 96-Pin F-BGA

Product Application

The H5TC4G83CFR-xxA(I,L,J),H5TQC4G63CFR-xxA(I,L,J) are a 4Gb low power Double Data Rate III

(DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. SK Hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling.

OPERATING FREQUENCY

Speed

Grade

(marking

 

Frequency[Mbps]

Remark(CL-tRCD-tRP)

CL5

CL6

CL7

CL8

CL9

CL10

CL11

CL12

CL13

CL14

-H9

667

800

1066

1099

1333

1333





DDR3-1333 9-9-9

-PB

667

800

1066

1066

1333

1333

1600




DDR3-1600 11-11-11

-RD*


800

1066

1066

1333

1333

1600


1866


DDR3-1866 13-13-13


Product Features

• VDD=VDDQ=1.35V + 0.100 / - 0.067V

• Fully differential clock inputs (CK, CK) operation

• Differential Data Strobe (DQS, DQS)

• On chip DLL align DQ, DQS and DQS transition with CK transition

• DM masks write data-in at the both rising and falling edges of the data strobe

• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock

• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11 and 13 supported

• Programmable additive latency 0, CL-1, and CL-2 supported

• Programmable CAS Write latency (CWL) = 5, 6, 7, 8

• Programmable burst length 4/8 with both nibble sequential and interleave mode

• BL switch on the fly

• 8banks

• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)/ - 7.8 µs at 0oC ~ 85 oC/ - 3.9 µs at 85oC ~ 95 oC/ Commercial Temperature( 0oC ~ 95 oC)/ Industrial Temperature( -40oC ~ 95 oC)

• JEDEC standard 78ball FBGA(x8), 96ball FBGA (x16)

• Driver strength selected by EMRS

• Dynamic On Die Termination supported

• Asynchronous RESET pin supported

• ZQ calibration supported

• TDQS (Termination Data Strobe) supported (x8 only)

• Write Levelization supported

• 8 bit pre-fetch

* This product in compliance with the RoHS directive.

Product Picture

SK hynix H5TC4G63CFR-RDASK hynix H5TC4G63CFR-RDASK hynix H5TC4G63CFR-RDA

Product Advantage and Disadvantage

  • Advantage: Dynamic On Die Termination supported/ Asynchronous RESET pin supported/ ZQ calibration supported/ TDQS (Termination Data Strobe) supported (x8 only)/ Write Levelization supported

  • Disadvantage:- 

How to Identify if the product is original genuine

  • 1.See if there is any trace on the surface of the chip.

  • 2.Look at the print. Most of the chips are printed by laser or printed by special chip printer. The handwriting is clear, not obscure and hard to erase.

  • 3.Look at the pins. All bright and new tin pins must be refurbished. Most of the pins of IC should be the silver powder feet, which is dark but uniform.

  • 4.Measure the thickness of the device and look at the edge of the device.

H5TC4G63CFR-RDA Distributor

DistributorStockYearsManufacturerDescription
 Kynix1800-SK Hynixmemory
 Luxe Electronic24416-SK HynixConfirmed AVAILABLE Stock/OEM|CM Only| NO BROKER RFQ's or EMAILS
Avnet45-SK HynixDRAM Chip DDR3L SDRAM 4G-Bit 256Mx16 1.35V/1.5V 96-Pin F-BGA (Alt: H5TC4G63CFR-RDA)/RoHS
  Verical48000-SK HynixH5TC4G63CFR-RDAR


5 comments

    • Coke on 2018-4-12 11:39:45

    Sir Thank you for you value page~ Could I ask that how much is the H5TC4G63CFR-RDA? Coke

      • author on 2018-4-12 11:42:26
        author

      Re:

      Hi~ Coke

      I am pleasure to provide valuable pages. And you can click "purchase button" and it will take you to the page which has more details about H5TC4G63CFR-RDA.

    • Change on 2018-4-12 11:49:11

    Hello,sir Perfect,I spend a lot of ~ timmmme to find this part. Thank you very much~ And sir ,how do I subscribe you ? I hope I can receive your blog news when you update it. Change

      • author on 2018-4-12 11:50:10
        author

      Re:

      Hi~Change

      Thank you for you admire. I will try my best to provide more valuable pages.

    • mind on 2018-4-12 11:56:41

    As the development of technology and AI, Semiconductor industry and electronic industry are blooming as soon as possible.

    • sally on 2018-4-12 11:59:12

    H5TC4G63CFR-RDA (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V ?

    • Sanyantan on 2018-4-12 12:03:25

    Excellect!

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