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Mar 24 2020

K8D6316UTM-PI07 Datasheets| SAMSUNG| PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-K8D6316UTM-PI07

Manufacturer Part#:

K8D6316UTM-PI07

Product Category:

IC Chips

Stock:

Yes

Manufacturer:

SAMSUNG

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Description:

-

Datasheet:

K8D6316UTM-PI07 Datasheet

Package:

TSOP48

Quantity:

13228 PCS


K8D6316UTM-PI07 Images are for reference only.

K8D6316UTM-PI07 Image 


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Yes

Status

Obsolete

Package Description

TSSOP, TSSOP48,.8,20

Brand

SAMSUNG

Sub Category

Flash Memories

Access Time-Max

70 ns

Alternate Memory Width

8

Boot Block

TOP

Command User Interface

Yes

Common Flash Interface

Yes

Data Polling

Yes

I/O Type

COMMON

JESD-30 Code

R-PDSO-G48

Memory Density

67108864 bit

Memory IC Type

FLASH

Memory Width

16

Number of Terminals

48

Number of Words

4194304 words

Number of Words Code

4000000

Number of Sectors/Size

8127

Organization

4MX16

Operating Temperature

-40°C~85°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

TSSOP

Parallel/Serial

PARALLEL

Package Equivalence Code

TSSOP48,.8,20

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies

3/3.3 V

Qualification Status

Not Qualified

Risk Rank

5.78

Ready/Busy

Yes

Rohs Code

Yes

Standby Current-Max

0.00003 A

Supply Current-Max

0.05 mA

Sector Size

8K,64K

Surface Mount

Yes

Technology

CMOS

Toggle Bit

Yes

Type

NOR TYPE

Temperature Grade

INDUSTRIAL

Terminal Form

GULL WING

Terminal Pitch

0.5 mm

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED


Features

Single Voltage 2.7V to 3.6V for Read and Write operations

Organization 8,388,608 bit (Byte mode) / 4,194, 304 x 16 bit (Word mode)

Fast Read Access Time: 70ns

Dual Bank architectures

  •   Bank 1 / Bank 2: 16Mb /48Mb

Secode (Security Code) Block: Bxtra 64K Byte block

Power Consumption (typical value @5MHz)

  •   Read Current : 14mA
  •   Program/Brase Current: 15mA
  •   Read White Program or Read White Erase Current: 25mA
  •   Standby Mode/Auto Sleep Mode: 10uA

WP/ACC input pin

  •   Allow special protection of two outermost boot blocks atⅤⅡ, regardless of block protect status
  •   Removes special protection of two outermost boot blocks as ⅤIH, the blocks return to normal block protect status
  •   Program time at VHH: 9 us/word

Erase Suspend / Resume

Unblock Bypass Program

Hardware RESET Pin

Command Register Operation

Block Group Protection / Unprotection

Supports Common Flash Memory Interface

Industrial Temperature : -40°C~85°C

Endurance : 100,000 Program/Erase Cycle Minimum

Data Retention : 10 years

  •   Package :

   48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch

   48 Ball TBGA : 6 x 9 mm / 0.8 mm Ball pitch

   48 Ball FBGA : 6 x 9 mm / 0.8 mm Ball pitch


Advantages and Disadvantages

Advantages

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x 16. The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D6316U NOR Flash consists of two banks. This device is capable of reading data from one bank white programming or erasing in the other bank. Access times of 70ns, 80ns and 90ns are available for the device. The device's first access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation id completed within typically 0.7 sec. The device requires 15mA as program/erase current in the standard and industrial temperature ranges.

The K8D6316U NOR Flash Memory is created by using SAMSUNG's advanced CMOS process technology. This device is available in 48 pin TSOP1 and 48 ball TBGA, FBGA packages. The device is compatible with EPROM applications to require high-density and cost-effective nonvolatile read/write storage solutions.


Applications

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Product Functions

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ECCN / UNSPSC

There is no relevant information available for this part yet.


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / Non-Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

13228 PCS

Samsung Semiconductor

-

Vyrian

545 PCS

Samsung Semiconductor

-

Nexxon

In Stock

Samsung Semiconductor

-

C Plus Electronics

119 PCS

Samsung Semiconductor

-


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

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Market Price Analysis

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