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Apr 11 2019

MT41K256M16TW-093IT:P Datasheets| MICRON| PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-MT41K256M16TW-093IT:P

Manufacturer Part#:

MT41K256M16TW-093IT:P

Product Category:

Memory

Stock:

Yes

Manufacturer:

MICRON

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Description:

IC DRAM 4G PARALLEL 96FBGA

Datasheet:

MT41K256M16TW-093IT:P Datasheet

Package:

FBGA

Quantity:

1250 PCS


MT41K256M16TW-093IT:P Images are for reference only.

MT41K256M16TW-093IT:P


CAD Models

Footprint

Footprint


Product Attributes

Manufacturer:

MICRON


Product Category:

Memory


Series:

--


Part Status:

Obsolete


Memory Type:

Volatile


Memory Format :

DRAM


Technology :

SDRAM - DDR3L


Memory Size:

4Gb (256M x 16)


Clock Frequency :

1067MHz


Write Cycle Time - Word, Page:

--


Access Time:

20ns


Memory Interface:

Parallel


Voltage - Supply

1.283V ~ 1.45V


Operating Temperature:

-40°C ~ 95°C (TC)


Mounting Type:

Surface Mount


Package / Case:

96-TFBGA


Supplier Device Package:

96-FBGA (8x14)


Mounting Style:

SMD/SMT


Product Type:

DRAM


Address Bus Width:

15 Bit


Data Bus Width:

16 Bit


Density:

4 Gb


Max Processing Temp:

260


Maximum Clock Rate:

1066 MHz


Maximum Random Access Time:

0.938 ns


Mounting:

Surface Mount


Number of Bits per Word:

16 Bit


Number of I/O Lines:

16 Bit


Operating Supply Voltage:

1.3500 V


Organization:

256M x 16

Pin Count:

96


Product Dimensions:

14 x 8 x 0.76


Screening Level:

Industrial


Supplier Package:

FBGA


Type:

DDR3L SDRAM


Contact Plating:

Copper , Tin , Silver


Access Time:

0.938 ns



Product Features

• VDD = VDDQ = 1.35V (1.283–1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V

– Supports DDR3L devices to be backward compatible in 1.5V applications

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 105°C

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

– 16ms, 8192-cycle refresh at >95°C to 105°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration


Product Functions

DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one half-clock-cycle data transfers at the I/O pins.

The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes.

The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble.


Application

Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications").


Advantages and Disadvantages

There is no relevant information available for this part yet.


ECCN / UNSPSC

Description

Value

ECCN:

EAR99

HTSN:

8542320036

SCHEDULE B:

8542320023


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3(168 Hours)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant


Product Compliance

USHTS:

8542320036

CAHTS:

8542320020

CNHTS:

8542320000

MXHTS:

85423201

ECCN:

EAR99


Documents & Media

Datasheets

MT41K256M16TW-093 IT:P Datasheet

PCN Obsolescence/ EOL

Mult Devices 30/Aug/2017

PCN Packaging

Standard Pkg Label Chg 20/Feb/2019


Additional Resources

Standard Package

2,000

Other Names

MT41K256M16TW-093 IT:P TR-ND

MT41K256M16TW-093IT:PTR


Product Manufacturer

Micron Technology, Inc. is an American global corporation based in Boise, Idaho. The company is a holding company for subsidiaries engaged in the design and production of computers, semiconductors, and other related products. The subsidiaries produce many forms of semiconductor devices, including dynamic random-access memory, flash memory, USB flash drives and solid-state drives. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory. It owned Lexar between 2006 and 2017.


Product Range

Memory

Storage

Advanced Solutions

DRAM

Memory Cards

3D XPoint™ Technology

DRAM Modules

Solid State Drives

Advanced Computing Solutions



Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

1250 PCS

MICRON

IC DRAM 4G PARALLEL 96FBGA

Digikey

--

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

Mouser

--

Micron

DRAM


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

There is no relevant information available for this part yet.


Market Price Analysis

There is no relevant information available for this part yet.


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