MT47H64M16HR-25EAIT:H Datasheets| MICRON| PDF| Price| In Stock

Product Overview

MT47H64M16HR-25EAIT:H Images are for reference only.

CAD Models

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Product Attributes

Product Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Duplicate output strobe (RDQS) option for x8

• DLL to align DQ and DQS transitions with CK

• 8 internal banks for concurrent operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1 t CK

• Selectable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Industrial temperature (IT) option

• Automotive temperature (AT) option

• RoHS-compliant

• Supports JEDEC clock jitter specification

Product Functions

The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.

Applications

Automotive Applications.

Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets.

Critical Applications.

Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications").

Advantages and Disadvantages

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ECCN / UNSPSC

Environmental & Export Classifications

Additional Resources

Documents & Media

Product Manufacturer

Micron Technology, Inc. is an American global corporation based in Boise, Idaho. The company is a holding company for subsidiaries engaged in the design and production of computers, semiconductors, and other related products. The subsidiaries produce many forms of semiconductor devices, including dynamic random-access memory, flash memory, USB flash drives and solid-state drives. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory. It owned Lexar between 2006 and 2017.

Product Range

Distributors

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Market Price Analysis

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