Product Overview
KY32-MT47H64M16HR-25EAIT:H | |
Manufacturer Part#: | MT47H64M16HR-25EAIT:H |
Product Category: | Memory |
Stock: | Yes |
Manufacturer: | MICRON |
Click Purchase button to buy original genuine MT47H64M16HR-25EAIT:H | |
Description: | IC DRAM 1G PARALLEL 84FBGA |
Detailed Description: | SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5) |
Datasheet: | |
Package: | FBGA |
Quantity: | 1658 PCS |
MT47H64M16HR-25EAIT:H Images are for reference only.
CAD Models
Footprint
Product Attributes
Mfr Package Description | FBGA-84 |
REACH Compliant | Yes |
EU RoHS Compliant | Yes |
Status | Discontinued |
Sub Category | DRAMs |
Access Mode | MULTI BANK PAGE BURST |
Access Time-Max | 0.4 ns |
Clock Frequency-Max (fCLK) | 400.0 MHz |
Interleaved Burst Length | 4,8 |
I/O Type | COMMON |
JESD-30 Code | R-PBGA-B84 |
Memory Density | 1.073741824E9 bit |
Memory IC Type | DDR DRAM |
Memory Width | 16 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 84 |
Number of Words | 6.7108864E7 words |
Number of Words Code | 64M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Min | -40.0 Cel |
Operating Temperature-Max | 85.0 Cel |
Organization | 64MX16 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | TFBGA |
Package Equivalence Code | BGA84,9X15,32 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies (V) | 1.8 |
Qualification Status | Not Qualified |
Refresh Cycles | 8192.0 |
Screening Level | AEC-Q100 |
Seated Height-Max | 1.2 mm |
Sequential Burst Length | 4,8 |
Standby Current-Max | 0.007 Amp |
Supply Current-Max | 0.26 Amp |
Supply Voltage-Nom (Vsup) | 1.8 V |
Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Max (Vsup) | 1.9 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Length | 12.5 mm |
Width | 8.0 mm |
Additional Feature | AUTO/SELF REFRESH |
Risk Rank: | 5.14 |
Product Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 t CK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Product Functions
The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.
Applications
Automotive Applications.
Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets.
Critical Applications.
Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications").
Advantages and Disadvantages
There is no relevant information available for this part yet.
ECCN / UNSPSC
Description | Value |
ECCN: | EAR99 |
HTSN: | 8542320022 |
SCHEDULE B: | 8542320023 |
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) | 3(168 Hours) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Additional Resources
Standard Package | 1,000 |
Other Names | MT47H64M16HR-25E AIT:H TR-ND MT47H64M16HR-25EAIT:HTR |
Documents & Media
Datasheets | |
PCN Obsolescence/ EOL | |
PCN Assembly/Origin |
Product Manufacturer
Micron Technology, Inc. is an American global corporation based in Boise, Idaho. The company is a holding company for subsidiaries engaged in the design and production of computers, semiconductors, and other related products. The subsidiaries produce many forms of semiconductor devices, including dynamic random-access memory, flash memory, USB flash drives and solid-state drives. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory. It owned Lexar between 2006 and 2017.
Product Range
DRAM | DRAM Modules | NAND Flash |
Graphics Memory | Managed NAND | Managed NAND |
Multichip Packages | NOR Flash | Memory Cards |
Distributors
Distributor | Stock | Manufacturer | Descriptions |
1658 PCS | MICRON | IC DRAM 1G PARALLEL 84FBGA | |
Digikey | 1000 | Micron Technology Inc. | IC DRAM 1G PARALLEL 84FBGA |
Avnet | 1368 | Micron | DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA |
Alternative Models
There is no relevant information available for this part yet.
Popularity by Region
There is no relevant information available for this part yet.
Market Price Analysis
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