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Mar 28 2019

MT47H64M16HR-25EAIT:H Datasheets| MICRON| PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-MT47H64M16HR-25EAIT:H

Manufacturer Part#:

MT47H64M16HR-25EAIT:H

Product Category:

Memory

Stock:

Yes

Manufacturer:

MICRON

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Description:

IC DRAM 1G PARALLEL 84FBGA

Detailed Description:

SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5)

Datasheet:

MT47H64M16HR-25EAIT:H Datasheet

Package:

FBGA

Quantity:

1658 PCS


MT47H64M16HR-25EAIT:H Images are for reference only.

MT47H64M16HR-25EAIT:H


CAD Models

footprint

Footprint


Product Attributes

Mfr Package Description

FBGA-84

REACH Compliant

Yes

EU RoHS Compliant

Yes

Status

Discontinued

Sub Category

DRAMs

Access Mode

MULTI BANK PAGE BURST

Access Time-Max

0.4  ns

Clock Frequency-Max (fCLK)

400.0  MHz

Interleaved Burst Length

4,8

I/O Type

COMMON

JESD-30 Code

R-PBGA-B84

Memory Density

1.073741824E9  bit

Memory IC Type

DDR DRAM

Memory Width

16

Number of Functions

1

Number of Ports

1

Number of Terminals

84

Number of Words

6.7108864E7  words

Number of Words Code

64M

Operating Mode

SYNCHRONOUS

Operating Temperature-Min

-40.0  Cel

Operating Temperature-Max

85.0  Cel

Organization

64MX16

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

TFBGA

Package Equivalence Code

BGA84,9X15,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Power Supplies (V)

1.8

Qualification Status

Not Qualified

Refresh Cycles

8192.0

Screening Level

AEC-Q100

Seated Height-Max

1.2  mm

Sequential Burst Length

4,8

Standby Current-Max

0.007  Amp

Supply Current-Max

0.26  Amp

Supply Voltage-Nom (Vsup)

1.8  V

Supply Voltage-Min (Vsup)

1.7  V

Supply Voltage-Max (Vsup)

1.9  V

Surface Mount

YES

Technology

CMOS

Temperature Grade

INDUSTRIAL

Terminal Form

BALL

Terminal Pitch

0.8  mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Length

12.5  mm

Width

8.0  mm

Additional Feature

AUTO/SELF REFRESH

Risk Rank:

5.14


Product Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Duplicate output strobe (RDQS) option for x8

• DLL to align DQ and DQS transitions with CK

• 8 internal banks for concurrent operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1 t CK

• Selectable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Industrial temperature (IT) option

• Automotive temperature (AT) option

• RoHS-compliant

• Supports JEDEC clock jitter specification


Product Functions

The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.


Applications

Automotive Applications.

Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets.

Critical Applications.

Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications").


Advantages and Disadvantages

There is no relevant information available for this part yet.


ECCN / UNSPSC

Description

Value

ECCN:

EAR99

HTSN:

8542320022

SCHEDULE B:

8542320023


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3(168 Hours)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant


Additional Resources

Standard Package

1,000

Other Names

MT47H64M16HR-25E AIT:H TR-ND

MT47H64M16HR-25EAIT:HTR


Documents & Media

Datasheets

MT47Hxx(x)M4/8/16

PCN Obsolescence/ EOL

Multiple Devices 04/Feb/2014

Revision 1 Update LTB 02/May/2014

PCN Assembly/Origin

U68A Fab Site Transition 17/Jul/2013


Product Manufacturer

Micron Technology, Inc. is an American global corporation based in Boise, Idaho. The company is a holding company for subsidiaries engaged in the design and production of computers, semiconductors, and other related products. The subsidiaries produce many forms of semiconductor devices, including dynamic random-access memory, flash memory, USB flash drives and solid-state drives. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory. It owned Lexar between 2006 and 2017.


Product Range

DRAM

DRAM Modules

NAND Flash

Graphics Memory

Managed NAND

Managed NAND

Multichip Packages

NOR Flash

Memory Cards


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

1658 PCS

MICRON

IC DRAM 1G PARALLEL 84FBGA

Digikey

1000

Micron Technology Inc.

IC DRAM 1G PARALLEL 84FBGA

Avnet

1368

Micron

DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

There is no relevant information available for this part yet.


Market Price Analysis

There is no relevant information available for this part yet.


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