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Nov 8 2019

MT41J256M8HX-125:D Datasheets|Micron Technology, Inc. | PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-MT41J256M8HX-125:D

Manufacturer Part#:

MT41J256M8HX-125:D

Product Category:

Memory ICs

Stock:

Yes

Manufacturer:

Micron Technology, Inc.

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Description:

-

Datasheet:

MT41J256M8HX-125:D Datasheet

Package:

BGA

Quantity:

2366 PCS


MT41J256M8HX-125:D Images are for reference only.

 MT41J256M8HX-125:D Image


CAD Models

 MT41J256M8HX-125:D Footprint

MT41J256M8HX-125:D Footprint


Product Attributes

Categories

Integrated Circuits (ICs) Memory

Manufacturer

Micron Technology Inc.

Series

-

Packaging

Tray

Part Status

Obsolete

Memory Type

Volatile

Memory Format

DRAM

Technology

SDRAM - DDR3

Memory Size

2Gb (256M x 8)

Memory Interface

Parallel

Clock Frequency

800MHz

Write Cycle Time - Word, Page

-

Access Time

13.75ns

Operating Temperature

0°C ~ 95°C (TC)

Mounting Type

Surface Mount

Package / Case

78-TFBGA

Supplier Device Package

78-FBGA (9x11.5)

Base Part Number

MT41J256M8

Mfr Package Description

9 X 11.50 MM, LEAD FREE, FBGA-78

REACH Compliant

Yes

EU RoHS Compliant

Yes

Status

Discontinued

Sub Category

DRAMs

Access Mode

MULTI BANK PAGE BURST

Access Time-Max

0.225  ns

Clock Frequency-Max (fCLK)

800.0  MHz

Interleaved Burst Length

8

I/O Type

COMMON

JESD-30 Code

R-PBGA-B78

JESD-609 Code

e1

Memory Density

2.147483648E9  bit

Memory IC Type

DDR DRAM

Memory Width

8

Number of Functions

1

Number of Ports

1

Number of Terminals

78

Number of Words

2.68435456E8  words

Number of Words Code

256M

Operating Mode

SYNCHRONOUS

Operating Temperature-Min

0.0  Cel

Operating Temperature-Max

85.0  Cel

Organization

256MX8

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

TFBGA

Package Equivalence Code

BGA78,9X13,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (Cel)

260

Qualification Status

Not Qualified

Refresh Cycles

8192.0

Seated Height-Max

1.2  mm

Sequential Burst Length

8

Standby Current-Max

0.012  Amp

Supply Current-Max

0.435  Amp

Supply Voltage-Nom (Vsup)

1.5  V

Supply Voltage-Min (Vsup)

1.425  V

Supply Voltage-Max (Vsup)

1.575  V

Surface Mount

YES

Technology

CMOS

Temperature Grade

OTHER

Terminal Finish

TIN SILVER COPPER

Terminal Form

BALL

Terminal Pitch

0.8  mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

30

Length

11.5  mm

Width

9.0  mm

Additional Feature

AUTO/SELF REFRESH


Features

• VDD = VDDQ = 1.5V ±0.075V

• 1.5V center-terminated push/pull I/O

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Programmable CAS READ latency (CL)

• Posted CAS additive latency (AL)

• Programmable CAS WRITE latency (CWL) based on tCK

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 0°C to 95°C

– 64ms, 8192 cycle refresh at 0°C to 85°C

– 32ms, 8192 cycle refresh at 85°C to 95°C

• Self refresh temperature (SRT)

• Write leveling

• Multipurpose register

• Output driver calibration


Advantages and Disadvantages

There is no relevant information available for this part yet.


Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

Description

Value

ECCN

EAR99

HTSN

8542.32.00.36


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3(168 Hours)

Lead Free Status / RoHS Status

Lead free / RoHS3 Compliant


Documents & Media

Datasheets

MT41J512M4,256M8,128M16


Product Manufacturer

Micron Technology, Inc. is an American global corporation based in Boise, Idaho. The company is a holding company for subsidiaries engaged in the design and production of computers, semiconductors, and other related products. The subsidiaries produce many forms of semiconductor devices, including dynamic random-access memory, flash memory, USB flash drives and solid-state drives. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory. It owned Lexar between 2006 and 2017.


Product Range

Devices

Boards

Developer Tools

Memory

Storage

Advanced Solutions

DRAM

Memory Cards

3D XPoint™ Technology

DRAM Modules

Solid State Drives

Advanced Computing Solutions


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix Semiconductor

2366 PCS

Micron Technology Inc.

-

Digi-Key

Non-stock

Micron Technology Inc.

IC DRAM 2G PARALLEL 78FBGA

Avnet

Non-stock

-

-

Mouser

Non-stock

Micron Technology Inc.

DRAM


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

MT41J256M8HX-125:D Image 

MT41J256M8HX-125:D Popularity by Region


Market Price Analysis

There is no relevant information available for this part yet.


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