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Feb 20 2019

IGB15N60T Datasheets| INFINEON| PDF| Price| In Stock

Product Overview  

Kynix Part #:

KY56-IGB15N60T

Manufacturer Part#:

IGB15N60T

Product Category:

IGBTs - Single

Stock:

Yes

Manufacturer:

INFINEON

Description:

IGBT 600V 30A 130W TO263-3-2

Package:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Datasheet:

IGB15N60T Datasheet

Click Purchase button to buy original genuine IGB15N60T

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Quantity:

7036 PCS


IGB15N60T Images are for reference only. 

IGB15N60T.png


CAD Models

IGB15N60T   Footprint.png

IGB15N60T   Footprint


Product Attributes

Manufacturer:

INFINEON

Product Category:

IGBTs - Single

Series:

IGB15N60

Part Life Cycle Code:

Active

Mounting Style:

SMD/SMT

Mounting Type:

Surface Mount

Brand:

Infineon Technologies

Case:

D2PAK

Case Connection:

COLLECTOR

Configuration:

Single

Collector-Emitter Saturation Voltage:

1.5 V

Gate-Emitter Leakage Current:

100 nA

Current - Collector Pulsed (Icm):

45 A

Gate Charge:

87 nC

Channel Type:

N

Input Type:

Standard

IGBT Type:

Trench

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Lead Finish:

Tin Over Nickel

Maximum Collector Emitter Voltage:

600 V

Maximum Continuous Collector Current:

30 A

Maximum Gate Emitter Voltage:

+/- 20 V

Maximum Processing Temperature:

260

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

- 40 °C

Number of Elements:

1.0

Packaging:

Reel

Package / Case:

TO-263-3

Package Description:

SMALL OUTLINE, R-PSSO-G2

Part-Aliases:

IGB15N60TATMA1 IGB15N60TXT SP000054921

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Pbfree Code:

Yes

Rohs Code:

Yes

Pd - Power Dissipation:

130 W

Product Type:

IGBT Transistors

Product Dimensions:

10.31 x 9.45 x 4.57

Height:

4.57 mm

Length:

10.31 mm

Width:

9.45 mm

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Pin Count:

3

PCB changed:

2

Polarity/Channel Type:

N-CHANNEL

Subcategory:

IGBTs

Supplier Package:

TO-263

Switching Energy:

570 µJ

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Type of transistor:

IGBT

Technology:

IGBT TRENCHSTOP™

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Turn-off Time-Nom (toff):

291.0 ns

Turn-on Time-Nom (ton):

32.0 ns

Unit-Weight:

0.068654 oz

CNHTS:

8541290000

HTS Code:

8541290095

MXHTS:

85412999

TARIC:

8541290000


Features

● Lowest VCEsat drop for lower conduction losses

● Low switching losses

● Easy parallel switching capability due to positive temperature coefficient in VCEsat

● Very soft, fast recovery anti-parallel Emitter Controlled Diode

● High ruggedness, temperature stable behavior

● Low EMI emissions

● Low gate charge

● Very tight parameter distribution


Overview

Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. 


Advantages

◆ Highest efficiency – low conduction and switching losses

◆ Comprehensive portfolio in 600 V and 1200 V for flexibility of design

◆ High device reliability


Applications

● UPS

● Solar Inverters

● Major Home Appliances

● Welding

● Air conditioning

● Industrial Drives

● Other hard switching applications


ECCN / UNSPSC

Description

Value

ECCN:

EAR99


Environmental & Export Classifications

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Moisture Sensitivity Level(MSL)

3(168 Hours)


Documents & Media

Datasheet

IGB15N60T Datasheet

Application Notes

Discrete IGBT Datasheet Explanation

Definition and use of junction temperature values

Recommendations for Screw Tightening Torque for IGBT Discrete Devices

TRENCHSTOP™: IGBT and Diode Optimization

Product Qualification Report

PQR - IGB15N60T

Product Information

IGBT 600V TRENCHSTOP™ and RC-Drives IGBT - Portfolio


Introduction to Purchasing

Stock: 7036 Can Ship Immediately.

   Kynix.pngKynix Semiconductor Limited is one of the largest electronic component distributor in China.

The company was founded in 2008.

Goal: Strive to be the leading electronic component distributor of this industry and become the first one in the world.

Advantages: Professional workshops and rigorous management system.

Business Philosophy: We gain credibility by adhering to our commitments, displaying honesty and integrity and reaching company goals solely through honourable conduct.


Product Manufacturer

Infineon Technologies is a German semiconductor manufacturer founded on 1 April 1999, when the semiconductor operations of the parent company Siemens AG were spun off to form a separate legal entity. As of 30 September 2018, Infineon had 40,100 employees worldwide. In fiscal year 2018, the company achieved sales of €7.599 billion.

On 1 May 2006, Infineon's Memory Products division was carved out as a distinct company called Qimonda AG, which at its height employed about 13,500 people worldwide. Qimonda was listed on the New York Stock Exchange until 2009.


Product Range

Power

ASIC

Automotive System IC

ESD and Surge Protection

HiRel

Microcontroller (MCU)

RF & Wireless Control

Security & smart card solutions

Sensor

Transceivers

Bipolar Transistor

Diode


Distributors

Distributors

Stock

Manufacturers

Descriptions

Kynix

7036

INFINEON

IGBT 600V 30A 130W TO263-3-2

Mouser

343

Infineon Technologies

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Avnet

0

Infineon

Trans IGBT Chip N-CH 600V 30A 3-Pin TO-263 T/R


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

IGB15N60T   Popularity by Region.png

IGB15N60T   Popularity by Region


Market Price Analysis

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