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Jan 24 2019

MT41K512M8RH-125IT:E Datasheets| MICRON| PDF| Price| In Stock

Product Overview 

Kynix Part #:

KY32-MT41K512M8RH-125IT:E

Manufacturer Part#:

MT41K512M8RH-125IT:E

Product Category:

Memory

Stock:

Yes

Manufacturer:

MICRON

Description:

IC DRAM 4G PARALLEL 78FBGA

Detailed Description:

SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 800MHz 13.75ns 78-FBGA (9x10.5)

Package:

BGA

Datasheet:

MT41K512M8RH-125IT:E Datasheet

Click Purchase button to buy original genuine MT41K512M8RH-125IT:E

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Quantity:

2200 PCS


MT41K512M8RH-125IT:E Images are for reference only.

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CAD Models

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Product Attributes

Manufacturer:

MICRON

Product Category:

Memory

Category:

Integrated Circuits (ICs)

Series:

MT41K

Technology:

SDRAM - DDR3L

Organization:

512MX8

Mounting Type:

Surface Mount

Mounting Style:

SMD/SMT

REACH Compliant:

Yes

EU RoHS Compliant:

Yes

China RoHS Compliant:

Yes

Access Time:

13.75ns

Access Mode:

MULTI BANK PAGE BURST

Address Bus Width:

19 b

Brand:

Micron

Chip Density (bit):

4G

Clock Frequency-Max (fCLK):

800.0 MHz

DRAM Type:

DDR3L SDRAM

Data Bus Width:

8 Bit

Density:

4 Gb

Density in Bits:

4294967296bit

Interleaved Burst Length:

8

I/O Type:

COMMON

JESD-30 Code:

R-PBGA-B78

JESD-609 Code:

e1

Lead Finish :

Tin/Silver/Copper

Lead Shape:

Ball

Mfr Package Description:

9 X 10.50 MM, LEAD FREE, FBGA-78

Memory Type:

Volatile

Memory Format:

DRAM

Memory IC Type:

DDR DRAM

Memory Size:

4Gb (512M x 8)

Memory Interface:

Parallel

Memory Density:

4.294967296E9 bit

Memory Width:

8

Maximum Frequency:

1.6 GHz

Minimum Operating Supply Voltage:

1.283 V

Maximum Operating Supply Voltage:

1.45 V

Typical Operating Supply Voltage:

1.35 V

Maximum Operating Current:

157 mA

Minimum Operating Temperature (°C):

-40

Maximum Operating Temperature (°C):

95

Maximum Processing Temperature(°C):

260

Maximum Clock Rate:

1600 MHz

Number of Functions:

1

Number of Ports:

1

Number of Internal Banks:

8

Number of Words per Bank:

64 M

Number of Bits per Word:

8 Bit

Number of Bits/Word:

8 Bit

Number of Words Code:

512M

Number of Words:

5.36870912E8  words

Number of I/O Lines:

8 Bit

Number of Terminals:

78

Number of Reflow Cycle:

3

Output Characteristics:

3-STATE

Packaging:

Tray

Package / Case:

78-TFBGA

Basic Package Type:

Ball Grid Array

Package Body Material:

PLASTIC/EPOXY

Package Code:

TFBGA

Package Equivalence Code:

BGA78,9X13,32

Package Shape:

RECTANGULAR

Package Style:

GRID ARRAY, THIN PROFILE, FINE PITCH

Package Height:

0.75(Min) + 0.16

Package Length:

10.5 mm

Package Width:

9.0 mm

Peak Reflow Temperature (Cel):

260

Power Supplies (V):

1.35

PCB changed:

78

Pin Count:

78

Pin Pitch:

0.8 mm

Product Dimensions:

10.5 x 9 x 0.75 mm

Product Type:

DRAM

Refresh Cycles:

8192.0

Reflow Solder Time (Sec):

30

Screening Level:

Industrial

Seated Height-Max:

1.2 mm

Sequential Burst Length:

8 mm

Standby Current-Max:

0.016 Amp

Subcategory:

Memory & Data Storage

Supplier Device Package:

78-FBGA (9x10.5)

Supplier Cage Code:

6Y440

Supplier Temperature Grade:

Industrial

Supply Current-Max:

0.22 Amp

Standard Package Name:

BGA

Temperature Grade:

OTHER

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

0.8 mm

Terminal Position:

BOTTOM

Time@Peak Reflow Temperature-Max (s):

30

Base Part Number:

MT41K512M8

Additional Feature:

AUTO/SELF REFRESH

HTSUSA:

8542320036


Features

 VDD = VDDQ = 1.35V (1.283–1.45V)

 Backward compatible to VDD = VDDQ = 1.5V ±0.075V

– Supports DDR3L devices to be backward compatible in 1.5V applications

 Differential bidirectional data strobe

 8n-bit prefetch architecture

 Differential clock inputs (CK, CK#)

 8 internal banks

 Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

 Programmable CAS (READ) latency (CL)

 Programmable posted CAS additive latency (AL)

 Programmable CAS (WRITE) latency (CWL)

 Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

Selectable BC4 or BL8 on-the-fly (OTF)

 Self refresh mode

 TC of 0°C to +95°C

– 64ms, 8192-cycle refresh at 0°C to +85°C

– 32ms at +85°C to +95°C

 Self refresh temperature (SRT)

 Automatic self refresh (ASR)

 Write leveling

 Multipurpose register

Output driver calibration


Functional Description

DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.

 

The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes.

 

The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble.

 

Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select the bank and the starting column location for the burst access.

 

The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.

 

As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time.

 

A self refresh mode is provided, along with a power-saving, power-down mode.


Advantages and Disadvantages

There is no relevant information available for this part yet.


Applications

 There is no relevant information available for this part yet.


ECCN / UNSPSC

ECCN

EAR99

HTSN

8542320023

SCHEDULE B

8542320023


Environmental & Export Classifications

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Moisture Sensitivity Level (MSL)

3 (168 Hours)


Documents & Media

Datasheet

DDR3L SDRAM


Introduction to Purchasing

Stock: 2200 Can Ship Immediately.

  Kynix.pngKynix Semiconductor Limited is one of the largest electronic component distributor in China.

The company was founded in 2008.

Goal: Strive to be the leading electronic component distributor of this industry and become the first one in the world.

Advantages: Professional workshops and rigorous management system.

Business Philosophy: We gain credibility by adhering to our commitments, displaying honesty and integrity and reaching company goals solely through honourable conduct.


Product Manufacturer

Micron Technology Inc. is an American global corporation based in Boise, Idaho. The company is a holding company for subsidiaries engaged in the design and production of computers, semiconductors, and other related products. The subsidiaries produce many forms of semiconductor devices, including dynamic random-access memory, flash memory, USB flash drives and solid-state drives. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory. It owned Lexar between 2006 and 2017.


Product Range

DRAM

DRAM Modules

Graphics Memory

Hybrid Memory Cube

Managed NAND

Multichip Packages

NAND Flash

NOR Flash

Memory Cards

Solid State Drives

QLC NAND Technology

3D XPoint Technology


Distributors

Distributors

Stock

Manufacturers

Descriptions

Kynix

2200

MICRON

IC DDR3 SDRAM 4GBIT 800MHZ FBGA

DigiKey

0

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

Mouser 

0

Micron

DRAM

Arrow

24

Micron Technology

DRAM Chip Mobile LPDDR SDRAM 4Gbit 128Mx32 1.8V 168-Pin WFBGA


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

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    MT41K512M8RH-125IT:E   Popularity by Region


Market Price Analysis

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 MT41K512M8RH-125IT:E   Market Price Analysis


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